MJE 340 TRANSISTOR Search Results

MJE 340 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

MJE 340 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MJE 340 transistor Abstract: transistor mje 340 Power Transistors TO-126 Case 340 mje 340 NPN POWER TRANSISTOR SOT-32 Text: Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 340 TO126 Useful For HIgh Voltage General Purpose Applications	Original	C-120 MJE 340 transistor transistor mje 340 Power Transistors TO-126 Case 340 mje 340 NPN POWER TRANSISTOR SOT-32	PDF
gummel Abstract: MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566 Text: 2SC5566 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 780.0m IKR NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A	Original	2SC5566 gummel MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566	PDF
"Bipolar Transistor" Abstract: 2SC6080 MJE 1000n Text: 2SC6080 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 2.800p NF 1 IKF 10 NE 2 NR 1 IKR 2.4 NC 2 IRB 200.0m RE 17.00m XTB 2 XTI 3 VJE 685.0m TF 700p VTF PTF VJC 620.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec	Original	2SC6080 "Bipolar Transistor" 2SC6080 MJE 1000n	PDF
2SC5706 equivalent Abstract: 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE Text: 2SC5706 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 IKR 780.0m NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A	Original	2SC5706 2SC5706 equivalent 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE	PDF
transistor mje 350 Abstract: transistor mje mje 350 mje 340 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low	Original	C-120 transistor mje 350 transistor mje mje 350 mje 340	PDF
MJE 340 transistor Abstract: Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 TO 126 Designed For Use Line - Operated Applications Such As Low	Original	C-120 MJE 340 transistor Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
TA 8644 Abstract: BFP690 SCT595 GMA marking Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP690 VPW05980 SCT595 200mA Oct-30-2002 TA 8644 BFP690 SCT595 GMA marking	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code	OCR Scan	900MHz Q62702-F1501 OT-343	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	OCR Scan	900MHz Q62702-F1501 OT-343	PDF
SOT343 C5 Abstract: SPICE 2G6 START405 START405TR Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR	Original	START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz SOT343 C5 SPICE 2G6 START405TR	PDF
BF340 Abstract: SOT343 C5 IC 0829 START405 START405TR Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR	Original	START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz BF340 SOT343 C5 IC 0829 START405TR	PDF
MJE 340 transistor Abstract: Q62702-F1501 Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	Original	900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501	PDF
Untitled Abstract: No abstract text available Text: BFP 181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	VPS05605 OT-343 Oct-12-1999	PDF

Untitled Abstract: No abstract text available Text: BFP181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	BFP181W VPS05605 OT343	PDF
silicon npn planar rf transistor sot 143 Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base	OCR Scan	BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor	PDF
npn C 1740 Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103 Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103	PDF
2222A Abstract: No abstract text available Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.	OCR Scan	AT-31625 OT-223 AT-31625 1997H 5965-5911E 2222A	PDF
Untitled Abstract: No abstract text available Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3	PDF
transistor Bf 444 Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
LB 1639 Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236 Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz	Original	UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236	PDF
ACPL-322J Abstract: MIC4452YN Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN	PDF
2SC3953-SPICE Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f	Original	12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE	PDF

MJE 340 TRANSISTOR Search Results

MJE 340 TRANSISTOR Result Highlights (5)

MJE 340 TRANSISTOR Datasheets Context Search

MJE 340 transistor

gummel

"Bipolar Transistor"

2SC5706 equivalent

transistor mje 350

MJE 340 transistor

ksd 302 250v, 10a

TA 8644

Untitled

Untitled

SOT343 C5

BF340

MJE 340 transistor

Untitled

Untitled

silicon npn planar rf transistor sot 143

npn C 1740

2222A

Untitled

transistor Bf 444

Transistor 2SA 2SB 2SC 2SD

LB 1639

ACPL-322J

2SC3953-SPICE