MJE13002 EQUIVALENT Search Results

MJE13002 EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FS60BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FM82DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

MJE13002 EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly	Original	MJE13002-E MJE13002-E MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K QW-R204-032	PDF
transistor, Ic 1A datasheet, NPN Abstract: 1.5A 2A coil Driver 2N2222 NPN Transistor features 220V reversing motor control 2N2222 transistor output curve mje13002 TRANSISTOR 2n2222 npn switching transistor 4 npn transistor ic MJE13002 DATA SHEET 220V DC circuits motor control Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching	Original	MJE13002 O-126 QW-R204-014 transistor, Ic 1A datasheet, NPN 1.5A 2A coil Driver 2N2222 NPN Transistor features 220V reversing motor control 2N2222 transistor output curve mje13002 TRANSISTOR 2n2222 npn switching transistor 4 npn transistor ic MJE13002 DATA SHEET 220V DC circuits motor control	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited	Original	MJE13002-E MJE13002-E MJE13alues	PDF
Untitled Abstract: No abstract text available Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching	Original	MJE13002 O-126 QW-R204-014	PDF
Untitled Abstract: No abstract text available Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching	Original	MJE13002 O-126 QW-R204-014	PDF
MJE13002 Abstract: mje13002 to92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly	Original	MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-xat QW-R204-014 mje13002 to92	PDF
mje13003 equivalent Abstract: MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905 Text: MOTOROLA Order this document by MJE13002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE13002 * MJE13003 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS	Original	MJE13002/D* MJE13002/D mje13003 equivalent MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905	PDF
mje13002 to92 Abstract: MJE13002 equivalent mje13002 OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly	Original	MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-x-T92-K QW-R204-014 mje13002 to92 MJE13002 equivalent OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92	PDF
transistor 2n222 Abstract: MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210 Text: ON Semiconductort MJE13002 * MJE13003 * SWITCHMODEt Series NPN Silicon Power Transistors *ON Semiconductor Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power	Original	MJE13002 MJE13003 r14525 MJE13002/D transistor 2n222 MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210	PDF
2SC103 Abstract: MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power switching	Original	MJE13002* MJE13003* POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC103 MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688	PDF
13003 TRANSISTOR equivalent Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS	OCR Scan	MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor	PDF
at08a Abstract: electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC Text: ELECTRONIC BALLASTS, Prepare,y R, J.Haver Motorola Inc. Voltage fed and current fed resonant inverter circuits for fluorescent lamp ballasts are discussed and a design example is presented. ,:!$,. A typical fluorescent lamp is a l-to 2-inch diameter on its	Original	200mA. MJE13002 200kHz 4-15V) 200mA AR1635, at08a electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF

2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943	PDF
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100	PDF
MJ11017 equivalent Abstract: BU108 MJ11021 BU326 BU100 MJE3055T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types	Original	MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T	PDF
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF

MJE13002 EQUIVALENT Search Results

MJE13002 EQUIVALENT Result Highlights (5)

MJE13002 EQUIVALENT Datasheets Context Search

Untitled

transistor, Ic 1A datasheet, NPN

Untitled

Untitled

Untitled

MJE13002

mje13003 equivalent

mje13002 to92

transistor 2n222

2SC103

13003 TRANSISTOR equivalent

at08a

2N5657 equivalent

MJE494

2SC495

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

TRANSISTOR BC 384

MJ11017 equivalent

BU108

pin configuration transistor bd140