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    MMBF170 Search Results

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    MMBF170 Price and Stock

    Diodes Incorporated MMBF170-7-F

    MOSFET N-CH 60V 500MA SOT23-3
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    DigiKey MMBF170-7-F Cut Tape 218,025 1
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    MMBF170-7-F Digi-Reel 218,025 1
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    MMBF170-7-F Reel 216,000 3,000
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    MMBF170-7-F Reel 3,000
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    Mouser Electronics MMBF170-7-F 20,809
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    Arrow Electronics MMBF170-7-F 129,000 14 Weeks 3,000
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    MMBF170-7-F Reel 3,000
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    Quest Components MMBF170-7-F 9,604
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    MMBF170-7-F 2,080
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    MMBF170-7-F 532
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    onsemi MMBF170

    MOSFET N-CH 60V 500MA SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBF170 Digi-Reel 23,775 1
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    MMBF170 Cut Tape 23,775 1
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    MMBF170 Reel 21,000 3,000
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    Avnet Americas MMBF170 Reel 15,000 18 Weeks 3,000
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    MMBF170 Ammo Pack 20 Weeks, 4 Days 1
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    Mouser Electronics MMBF170 116,707
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    MMBF170 Reel 3,000
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    Quest Components MMBF170 2,151
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    onsemi MMBF170LT1G

    MOSFET N-CH 60V 500MA SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBF170LT1G Digi-Reel 19,002 1
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    MMBF170LT1G Reel 18,000 3,000
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    MMBF170LT1G Reel 3,000
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    Diodes Incorporated MMBF170Q-13-F

    MOSFET N-CH 60V 500MA SOT23
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    Diodes Incorporated MMBF170Q-7-F

    MOSFET N-CH 60V 500MA SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBF170Q-7-F Digi-Reel 9,743 1
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    MMBF170 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBF170 Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    MMBF170 Diodes Short Form Selection Guide Original PDF
    MMBF170 Diodes N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    MMBF170 Fairchild Semiconductor N - Channel Enhancement Mode Field Effect Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel Original PDF
    MMBF170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    MMBF170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    MMBF170 National Semiconductor FET Transistor, N-Channel Enhancement Mode Field Effect Transistor, SOT-23 Original PDF
    MMBF170 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MMBF170 Motorola Switchmode Datasheet Scan PDF
    MMBF170 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MMBF170 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MMBF170 Unknown FET Data Book Scan PDF
    MMBF170 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    MMBF170 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    MMBF170 Vishay N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Scan PDF
    MMBF170-7 Diodes TRANS MOSFET N-CH 60V 0.5A 3SOT-23 T/R Original PDF
    MMBF170-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 500MA SOT23-3 Original PDF
    MMBF170-7-F Diodes MOSFET N-CHANNEL 60V SOT23 Original PDF
    MMBF170-7-F Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 500MA SOT23-3 Original PDF
    MMBF170L On Semiconductor Power MOSFET 500 mAmps, 60 Volts Original PDF

    MMBF170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k6z transistor

    Abstract: "Marking code" K6Z SOT-23 transistor k6z MMBF170 rohs J-STD-020A MMBF170 MMBF170-7
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: MMBF170 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · ·


    Original
    PDF MMBF170 OT-23, J-STD-020A MIL-STD-202, 500mA DS30104 k6z transistor "Marking code" K6Z SOT-23 transistor k6z MMBF170 rohs J-STD-020A MMBF170 MMBF170-7

    MMBF170LT1

    Abstract: MMBF170LT3
    Text: MMBF170LT1 Power MOSFET 500 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM


    Original
    PDF MMBF170LT1 r14525 MMBF170LT1/D MMBF170LT1 MMBF170LT3

    MOSFET bs170

    Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
    Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original
    PDF BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note

    1N4007

    Abstract: MMBF170 DF06 PTC 10k 1n4148 STEVAL-IHT003V1 11N4007 PMBT2222A PMBT2907A X0205N
    Text: STEVAL-IHT003V1 SCHEMATIC J16 3 D1 1 1N4007 START R2 470k 4 R1 620 D7 R3 510k + J17 3 R6 1 2 T2 3 22n PMBT2907A Q1 X0205N MMBF170 M1 T1 Q2 1N4148 PMBT2222A R7 J18 3 R5 D2 10k C 220 C3 1 ?n RUN DZ1 C2 10n R8 1MEG VC2 GND A C4 ACST6 VAK 1 - IA PTC DF06 47 BZX55C


    Original
    PDF STEVAL-IHT003V1 1N4007 PMBT2907A X0205N MMBF170 1N4148 PMBT2222A BZX55C 1N4007 MMBF170 DF06 PTC 10k 11N4007 PMBT2222A PMBT2907A X0205N

    k6z sot23

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · · · H Case: SOT-23, Molded Plastic


    Original
    PDF MMBF170 OT-23 OT-23, J-STD-020A MIL-STD-202, 500mA DS30104 k6z sot23

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A D TOP VIEW Mechanical Data · · · · · G C S D E


    Original
    PDF MMBF170 OT-23 OT-23, MIL-STD-202, 500mA DS30104

    MMBF170 rohs

    Abstract: MMBF170 k6z transistor MMBF170 GATE-SOURCE MMBF170-7 transistor k6z MMBF170-7-F
    Text: SPICE MODELS: MMBF170 MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage C G TOP VIEW S Available in Lead Free/RoHS Compliant Version Note 2


    Original
    PDF MMBF170 OT-23 J-STD-020C 500mA DS30104 MMBF170 rohs MMBF170 k6z transistor MMBF170 GATE-SOURCE MMBF170-7 transistor k6z MMBF170-7-F

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original
    PDF MMBF170 J-STD-020 MIL-STD-202, DS30104

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)


    Original
    PDF MMBF170

    Untitled

    Abstract: No abstract text available
    Text: MMBF170LT1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)-55õ


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    PDF MMBF170LT1

    BS170 116

    Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
    Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R


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    PDF 2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7002L 2N7002LT1 2N7002LT3 BS107 BS107A BS170 116 NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2

    BS170

    Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
    Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been


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    PDF BS170 MMBF170 500mA BS170 BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170

    transistor k6z

    Abstract: MMBF170W-7-F MMBF170W
    Text: MMBF170W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    PDF MMBF170W OT-323 OT-323 J-STD-020C MIL-STD-202, DS30493 transistor k6z MMBF170W-7-F MMBF170W

    Untitled

    Abstract: No abstract text available
    Text: MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant


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    PDF MMBF170L, NVBF170L OT-23 AEC-Q101 OT-23 MMBF170LT1/D

    k6z transistor

    Abstract: K6Z SOT-23 SOT23 k6z
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: MMBF170 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · ·


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    PDF MMBF170 OT-23, J-STD-020A MIL-STD-202, 500mA DS30104 k6z transistor K6Z SOT-23 SOT23 k6z

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A D TOP VIEW Mechanical Data · · · ·


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    PDF MMBF170 OT-23 OT-23, MIL-STD-202, 500mA DS30104

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT SPICE MODEL: MMBF170 TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · ·


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    PDF MMBF170 MMBF170 OT-23 OT-23, J-STD-020A MIL-STD-202, 500mA DS30104

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    PDF MMBF170 OT-23 J-STD-020C MIL-STD-202, DS30104

    code marking 6z sot-23

    Abstract: diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage


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    PDF MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN

    MARKING bs170

    Abstract: No abstract text available
    Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


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    PDF BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage -H : h“ A t TOP VIEW B 1 Mechanical Data N Case: SOT-23, Molded Plastic


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    PDF MMBF170 OT-23 OT-23, MIL-STD-202, DS30104

    transistor marking ra

    Abstract: No abstract text available
    Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)


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    PDF MMBF170LT1 OT-23 T0-236AB) transistor marking ra

    Untitled

    Abstract: No abstract text available
    Text: April 1995 N BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products have been designed to


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    PDF BS170 MMBF170 500mA MMBF170 OT-23,

    transistor MOSFET BS170

    Abstract: MOSFET BS170
    Text: & N a t i o n al A pril 1995 Semiconductor" BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


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    PDF BS170 MMBF170 500mA MMBF170 OT-23, transistor MOSFET BS170 MOSFET BS170