MMBT5550
Abstract: MMBT5551 1N914
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100
|
Original
|
PDF
|
MMBT5550
MMBT5551
OT-23
MMBT5550
MMBT5551
1N914
|
MMBT5551
Abstract: MMBT5551 G1 1N914 MMBT5550
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551
|
Original
|
PDF
|
MMBT5550
MMBT5551
OT-23
MMBT5551
MMBT5551 G1
1N914
MMBT5550
|
Untitled
Abstract: No abstract text available
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551
|
Original
|
PDF
|
MMBT5550
MMBT5551
OT-23
|
Untitled
Abstract: No abstract text available
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160
|
Original
|
PDF
|
MMBT5550
MMBT5551
OT-23
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
|
Original
|
PDF
|
MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010.
|
MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
|
Original
|
PDF
|
MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
|
marking G1 sot-23
Abstract: MMBT5401 MMBT5551 MARKING G1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1
|
Original
|
PDF
|
OT-23
MMBT5551
OT-23
MMBT5401
100MHz
MMBT5551
marking G1 sot-23
MMBT5401
MARKING G1
|
marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
|
Original
|
PDF
|
MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
|
sot23 g1
Abstract: MMBT5551
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
|
Original
|
PDF
|
MMBT5551
OT-23
QW-R206-010
sot23 g1
MMBT5551
|
TRANSISTOR SMD MARKING g1
Abstract: g1 smd transistor TRANSISTOR SMD catalog smd transistor g1 MMBT5551 catalog transistors smd transistors list NF marking TRANSISTOR SMD smd transistor 079 SMD TRANSISTOR MARKING 079
Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT5551 product family SOT-23 Plastic-Encapsulate Biploar Transistors
|
Original
|
PDF
|
MMBT5551
OT-23
600mA
300mW
80MHz
TRANSISTOR SMD MARKING g1
g1 smd transistor
TRANSISTOR SMD catalog
smd transistor g1
MMBT5551
catalog transistors
smd transistors list
NF marking TRANSISTOR SMD
smd transistor 079
SMD TRANSISTOR MARKING 079
|
marking G1
Abstract: No abstract text available
Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)
|
Original
|
PDF
|
MMBT5551
OT-23
MMBT5401
100MHz
marking G1
|
MMBT5551
Abstract: MMBT5551L marking G1 sot23 UTC
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 * High Collector-Emitter Voltage: VCEO=160V * High current gain 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION
|
Original
|
PDF
|
MMBT5551
OT-23
MMBT5551L
MMBT5551-x-AE3-6-R
MMBT5551L-x-AE3-6-R
QW-R206-010
MMBT5551
MMBT5551L
marking G1 sot23 UTC
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 * High Collector-Emitter Voltage: VCEO=160V * High current gain 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION Order Number
|
Original
|
PDF
|
MMBT5551
OT-23
MMBT5551L
MMBT5551-x-AE3-R
MMBT5551L-x-AE3-R
QW-R206-010
|
sot-23 Marking M1F
Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage
|
Original
|
PDF
|
MMBT5550LT1,
MMBT5551LT1
MMBT5550
MMBT5551
MMBT5550LT1/D
sot-23 Marking M1F
MMBT5551LT1G
MMBT5550
MMBT5550LT1
MMBT5550LT1G
MMBT5551
MMBT5551LT1
MMBT5551LT3
MMBT5551LT3G
RB SOT23-3
|
|
|
On semiconductor date Code sot-23
Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage
|
Original
|
PDF
|
MMBT5550LT1,
MMBT5551LT1
MMBT5550
MMBT5551
MMBT5550LT1/D
On semiconductor date Code sot-23
IC data book free download
sot-23 body marking A 4
TO-236
sot-23 Marking G1
Tape and Reel Packaging Specifications
Code sot-23 on semiconductor
1N914 transistor data sheet free download
G1 SOT-23
marking codes transistors a1 sot-23
|
marking code g1
Abstract: G1 TRANSISTOR SOT 23 PNP
Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic
|
Original
|
PDF
|
MMBT5551
MMBT5401)
OT-23
2002/95/EC
marking code g1
G1 TRANSISTOR SOT 23 PNP
|
G1 TRANSISTOR SOT 23 PNP
Abstract: No abstract text available
Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
|
Original
|
PDF
|
MMBT5551
MMBT5401)
OT-23
2002/95/EC
OT-323
OT-523
G1 TRANSISTOR SOT 23 PNP
|
Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
|
Original
|
PDF
|
MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
|
marking code g1
Abstract: sot-23 MARKING CODE G1 G1 TRANSISTOR SOT 23 PNP
Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃
|
Original
|
PDF
|
MMBT5551
MMBT5401)
OT-23
2002/95/EC
100MHz
Jun-2009,
KSNR13
MMBT5551
marking code g1
sot-23 MARKING CODE G1
G1 TRANSISTOR SOT 23 PNP
|
1N914
Abstract: MMBT5551 MMBT5551G1
Text: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBT5551 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc
|
Original
|
PDF
|
MMBT5551
OT-23
1N914
MMBT5551
MMBT5551G1
|
MMBT5551
Abstract: No abstract text available
Text: MMBT5551 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 A 1 Power dissipation Top View V Max 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040
|
Original
|
PDF
|
MMBT5551
OT-23
01-Jun-2004
MMBT5551
|
MMBT5551-G1
Abstract: MMBT5551
Text: MMBT5551 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • NPN Plastic Encapsulate Transistor Collector Current: ICM=0.6A Collector-Base Voltage: V BR CBO=180V Operating And Storage Temperatures –55OC to 150OC
|
Original
|
PDF
|
MMBT5551
150OC
MMBT5551
OT-23
100uAdc,
10uAdc,
10mAdc,
30MHz)
MMBT5551-G1
|
Untitled
Abstract: No abstract text available
Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
|
Original
|
PDF
|
MMBT5551
MMBT5401)
OT-23
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEo=160V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 180 160 6 600 350 V V V mA mW °C °C
|
OCR Scan
|
PDF
|
MMBT5551
625mW
300uS,
|