MMBTA55
Abstract: MMBTA56
Text: MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - 3 MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle < _ 2.0% 3.Pulse Test:Pulse Width <
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MMBTA55
MMBTA56
OT-23
MMBTA55
MMBTA56
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Untitled
Abstract: No abstract text available
Text: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <
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MMBTA55
MMBTA56
OT-23
MMBTA55
MMBTA56
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2GM sot
Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1 MMBTA56LT3 2gm marking code
Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector–Base Voltage –60 –80 VCBO MMBTA55 MMBTA56 Emitter–Base Voltage
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MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1
MMBTA55
MMBTA56
r14525
MMBTA55LT1/D
2GM sot
MMBTA55
MMBTA55LT1
MMBTA55LT3
MMBTA56
MMBTA56LT3
2gm marking code
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MMBTA05
Abstract: MMBTA06 MMBTA55 MMBTA56
Text: MMBTA55 . MMBTA56 MMBTA55 . MMBTA56 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse
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MMBTA55
MMBTA56
OT-23
O-236)
UL94V-0
MMBTA05,
MMBTA05
MMBTA06
MMBTA55
MMBTA56
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Untitled
Abstract: No abstract text available
Text: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
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k2g marking
Abstract: MMBTA55
Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBTA55 MMBTA56 Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
k2g marking
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K2X pnp
Abstract: K2X sot-23 K2X SOT23 k2x transistor surface mount sot 23 layout mmbta56 pnp k2x
Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBTA55 MMBTA56 Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
K2X pnp
K2X sot-23
K2X SOT23
k2x transistor surface mount
sot 23 layout mmbta56
pnp k2x
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Untitled
Abstract: No abstract text available
Text: SMBTA56/ MMBTA56 PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN Type SMBTA56/ MMBTA56 Marking s2G 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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SMBTA56/
MMBTA56
SMBTA06
MMBTA06
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MMBTA55
Abstract: MMBTA56 J-STD-020A MMBTA05 MMBTA06
Text: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
OT-23
OT-23,
J-STD-020A
MIL-STD-202urrent
MMBTA56
J-STD-020A
MMBTA06
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Untitled
Abstract: No abstract text available
Text: MMBTA55 . MMBTA56 MMBTA55 . MMBTA56 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case
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MMBTA55
MMBTA56
MMBTA56
OT-23
O-236)
UL94V-0
MMBTA05,
MMBTA06
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Untitled
Abstract: No abstract text available
Text: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 SOT-23 A Ideal for Medium Power Amplification and Switching
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
OT-23
OT-23
J-STD-020C
MIL-STD-202,
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MMBTA55
Abstract: No abstract text available
Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBTA55 MMBTA56 Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data
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MMBTA55
MMBTA56
MMBTA55
MMBTA05
MMBTA06)
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
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MMBTA56 S2G
Abstract: No abstract text available
Text: SMBTA56/MMBTA56 PNP Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 3 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration
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SMBTA56/MMBTA56
SMBTA06
MMBTA06
MMBTA56 S2G
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Untitled
Abstract: No abstract text available
Text: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 SOT-23 A Ideal for Medium Power Amplification and Switching
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
OT-23
AEC-Q101
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MMBTA55
Abstract: No abstract text available
Text: MMBTA55 / MMBTA56 MMBTA55 / MMBTA56 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-09-05 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]
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MMBTA55
MMBTA56
OT-23
O-236)
UL94V-0
MMBTA05
MMBTA06
MMBTA05,
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Untitled
Abstract: No abstract text available
Text: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 Lead-free PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 SOT-23 A Ideal for Medium Power Amplification and Switching
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
AEC-Q101
OT-23
OT-23
J-STD-020C
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K2X pnp
Abstract: No abstract text available
Text: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 3)
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
AEC-Q101
OT-23
J-STD-020C
K2X pnp
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MMBTA56 S2G
Abstract: MMBTA06 SMBTA06
Text: SMBTA56/MMBTA56 PNP Silicon AF Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration
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SMBTA56/MMBTA56
SMBTA06
MMBTA06
MMBTA56 S2G
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Untitled
Abstract: No abstract text available
Text: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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SMBTA56/
MMBTA56
SMBTA06
MMBTA06
VPS05161
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Amplifier transistor
Abstract: No abstract text available
Text: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER
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MMBTA06/56
MMBTA06
MMBTA56
350mW
OT-23
PARAMETEQW-R206-041
Amplifier transistor
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MMBTA56 S2G
Abstract: SMBTA56 MMBTA06 MMBTA56 SMBTA06
Text: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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SMBTA56/
MMBTA56
SMBTA06
MMBTA06
VPS05161
Feb-18-2004
MMBTA56 S2G
SMBTA56
MMBTA56
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MMBTA56 S2G
Abstract: MMBTA56 MMBTA06 SMBTA06 SMBTA56
Text: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA06 NPN MMBTA06 (NPN) 2 1 Type SMBTA56/ MMBTA56 Marking s2G 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings
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SMBTA56/
MMBTA56
SMBTA06
MMBTA06
VPS05161
EHP00849
EHP00850
EHP00851
MMBTA56 S2G
MMBTA56
MMBTA06
SMBTA06
SMBTA56
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Untitled
Abstract: No abstract text available
Text: MMBTA55 / MMBTA56 MMBTA55 / MMBTA56 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-09-05 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]
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MMBTA55
MMBTA56
OT-23
O-236)
UL94V-0
MMBTA05
MMBTA06
MMBTA05,
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bf91
Abstract: No abstract text available
Text: MMBTA56 PZTA56 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 2G B E C MPSA56 / MMBTA56 / PZTA56 MPSA56 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*
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MPSA56
MMBTA56
PZTA56
MPSA56
MMBTA56
OT-23
OT-223
bf91
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