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    MMIC 576 Search Results

    MMIC 576 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    MMIC 576 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-S003

    Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
    Text: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the


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    PDF 5091-9054E AN-S003 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700

    Untitled

    Abstract: No abstract text available
    Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the


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    PDF FMM5046VF 36dBm FMM5046VF FCSI0200M200

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet FMS2002QFN 2.2 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Throw MMIC Antenna Switch designed for use in Dual-band handsets GSM900 and GSM1800/1900 combinations. The switch is designed with one antenna port that can be routed to


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    PDF FMS2002QFN FMS2002QFN GSM900 GSM1800/1900 -73dBc

    Untitled

    Abstract: No abstract text available
    Text: NJG1672LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1672LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three LPFs on GSM/TD-SCDMA transmit paths for


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    PDF NJG1672LK4 NJG1672LK4

    grx2

    Abstract: NJG1672LK4 GSM1800 GSM1900 GSM900 HK1005
    Text: NJG1672LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1672LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three LPFs on GSM/TD-SCDMA transmit paths for


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    PDF NJG1672LK4 NJG1672LK4 grx2 GSM1800 GSM1900 GSM900 HK1005

    SNA-576

    Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
    Text: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier


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    PDF SNA-576 SNA-576 SNA-500) MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3

    transistor C110

    Abstract: C110 C165 MP0125 MP0500
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)


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    PDF MP0125 MP0150 MP0500 72x72 108x108 163x163 75x75 110x110 165x165 transistor C110 C110 C165 MP0125 MP0500

    MP0402

    Abstract: MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "A" = AuSn Attach and wire bondable pad "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)


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    PDF MP0001 MP0002 MP0003 MP0004 MP0005 MP0010 MP0015 MP0022 MP0033 MP0047 MP0402 MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004

    H580

    Abstract: HMC580ST89E HMC580ST89
    Text: HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G


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    PDF HMC580ST89 580ST89E HMC580ST89E HMC580ST89 H580

    nec 16312

    Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
    Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan


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    PDF PC1677 PC2708 PC2762/2763 PC2771/2776 P12152EJ2V0AN00 an88-6130 nec 16312 c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011

    5609 dec

    Abstract: dec 5609 MLT 22 615 mlt 22 627 001-120 544 mmic ED-4701 FMM5125X
    Text: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm


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    PDF FMM5125X 15/60GHz FMM5125X 1906B, 5609 dec dec 5609 MLT 22 615 mlt 22 627 001-120 544 mmic ED-4701

    MLT 22 615

    Abstract: No abstract text available
    Text: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm


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    PDF FMM5125X 15/60GHz FMM5125X 1906B, MLT 22 615

    ESD 141

    Abstract: FMS2022 B1142 capacitor 100pF 0603
    Text: Preliminary Data Sheet FMS2022 2.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 ¨ ¨ ¨ ¨ ¨ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical


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    PDF FMS2022 FMS2022 22-A114-B. MIL-STD-1686 MILHDBK-263. ESD 141 B1142 capacitor 100pF 0603

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


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    PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    Marking M2

    Abstract: No abstract text available
    Text: GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V


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    PDF OT-23 Q62702-M9 GPW05794 Marking M2

    SKY65137

    Abstract: S1770 s414 transistor S1383 S413 S414 s2063
    Text: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


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    PDF SKY65137-11: IEEE802 SKY65137-11 SKY65137-11 64-QAM 200851H SKY65137 S1770 s414 transistor S1383 S413 S414 s2063

    S1243

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description x IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


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    PDF SKY65137-11: IEEE802 SKY65137-11 20-pin, 200851F S1243

    circuits metal detector

    Abstract: SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414
    Text: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


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    PDF SKY65137-11: IEEE802 SKY65137-11 SKY65137-11 64-QAM 200851G circuits metal detector SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414

    Untitled

    Abstract: No abstract text available
    Text: DP10T Antenna Switch for GSM/UMTS/LTE CXM3548XR Description The CXM3548XR is a DP10T antenna switch for GSM /UMTS/LTE multi-mode handsets. The CXM3548XR has a CMOS SPI interface decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.


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    PDF DP10T CXM3548XR CXM3548XR XQFN-26P

    Untitled

    Abstract: No abstract text available
    Text: ell Stanford Microdevices Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth


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    PDF SLN-386

    UPC1677C

    Abstract: UPC1677B
    Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C upci677c - NOISE FIGURE AND GAIN V » . FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT:+19.5 dBm


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    PDF UPC1677B UPC1677C upci677c UPC1677 UPC1677B) UPC1677C

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


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    PDF uPC2776TB PC2776TB /iPC2776T /iPC2776TB PC2776T.

    TRANSISTOR BO 345

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


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    PDF UPC2776TB PC2776TB uPC2776TB uPC2776T PC2776T. WS60-00-1 C10535E) TRANSISTOR BO 345

    UPC1670C

    Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
    Text: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1


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    PDF 00Q2b3fl UPC1668 UPC1669 UPC1670 UPC1668B, UPC1668C, UPC1670C 574 nec UPC1668B UPC1668C UPC1669B UPC1669C UPC1670B