Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: GVA-81+ AN-60-046 LTE Base Station MMIC Amplifier Mini-Circuits GVA-81+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,
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GVA-81+
AN-60-046
M150261Â
AN60046
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: GVA-84+ AN-60-049 LTE Base Station MMIC Amplifier Mini-Circuits GVA-84+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,
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GVA-84+
AN-60-049
M150261Â
AN60049
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: PGA-102+ AN-60-052 LTE Base Station MMIC Amplifier Mini-Circuits PGA-102+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,
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PGA-102+
AN-60-052
M150261Â
AN60052
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: PSA-545+ AN-60-057 LTE Base Station MMIC Amplifier Mini-Circuits PSA-545+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,
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PSA-545+
AN-60-057
M150261Â
AN60057
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: GVA-83+ AN-60-048 LTE Base Station MMIC Amplifier Mini-Circuits GVA-83+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,
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GVA-83+
AN-60-048
M150261Â
AN60048
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: GVA-82+ AN-60-047 LTE Base Station MMIC Amplifier Mini-Circuits GVA-82+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband,
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GVA-82+
AN-60-047
M150261Â
AN60047
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: PMA-545+ AN-60-054 LTE Base Station MMIC Amplifier Mini-Circuits PMA-545+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require high linear
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PMA-545+
AN-60-054
2009vailable
M150261Â
AN60054
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: PMA-545G1+ AN-60-055 LTE Base Station MMIC Amplifier Mini-Circuits PMA-545G1+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require high linear
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PMA-545G1+
AN-60-055
M150261Â
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Phycomp
Abstract: MGA-545P8 TL11 TL22 F293
Text: Medium Power Amplifier for 5.8 GHz Applications using the Agilent MGA-545P8 GaAs MMIC Application Note 1339 Introduction Agilent Technologies’s MGA-545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent
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MGA-545P8
MGA-545P8.
MGA-545P8
5988-8652EN
Phycomp
TL11
TL22
F293
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4712
Abstract: P35-4712-1 M198 NN12 P35-4775-1
Text: Data sheet GaAs MMIC for 2.4GHz Wireless Lan Applications The P35-4712-1 is a high performance Gallium Arsenide Monolithic Microwave Integrated Circuit GaAs MMIC transceiver for wireless LAN applications in the 2.4GHz ISM band. It is designed for use with the P35-4775-1. Power
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P35-4712-1
P35-4775-1.
20dBm
P35-4712bookham
P35-4775-1)
P35-4713
TQFP-32
P35-4712-1
463/SM/00087/000
4712
M198
NN12
P35-4775-1
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KT 805
Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
Text: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which
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AN-60-010)
AN-60-010
M120106
AN60010
KT 805
Wideband RF Chokes
1 microhenry rfc
ERA-1SM
ERA-6SM
ERA-3SM
ERA-5SM
ADCH-80
ADCH-80A
ERA-21SM
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MMIC era
Abstract: MMIC MAR-6 gali-84 TB-432-8A TCCH-80A TB-409-39 Mini-Circuits TB-409-39 MAV-11SM TB-409-74 MCL MAR-6
Text: MMIC Test Boards: Instructions for Use AN-60-036 1.0 Introduction Mini Circuits manufacture a wide range of 4-pin MMIC surface-mount and drop-in amplifiers. Family of test boards, for evaluating these devices, has been designed as to make them easy to use by customer.
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AN-60-036)
Gener412-11+
TB-412-11A+
TB-412-11B+
LEE-19+
LEE-29+
LEE-39+
LEE-49+
LEE-59+
TB-413-19+
MMIC era
MMIC MAR-6
gali-84
TB-432-8A
TCCH-80A
TB-409-39
Mini-Circuits TB-409-39
MAV-11SM
TB-409-74
MCL MAR-6
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Untitled
Abstract: No abstract text available
Text: • HBH offers a new MMIC catalogue • No export restrictions, ITAR-free devices All MMICs can also be ordered as packaged devices 30.09.2014 Folie 1 HBH Microwav e GmbH property HBH MMIC Catalogue Processing and measurement of MMICs as well as packaging is done
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40GHz
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Untitled
Abstract: No abstract text available
Text: MMIC Test Boards: Instructions for Use AN-60-036 1.0 Introduction Mini Circuits manufacture a wide range of 4-pin MMIC surface-mount and drop-in amplifiers. Family of test boards, for evaluating these devices, has been designed as to make them easy to use by customer.
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AN-60-036)
AN-60-036
M150261
AN60036
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TL24
Abstract: Phycomp MGA-545P8 TL22 10D110 10D210 F293
Text: Medium Power Amplifier for 5.8 GHz Applications using the Avago MGA‑545P8 GaAs MMIC Application Note 1339 Introduction Amplifier Demo Board Avago Technologies’s MGA‑545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent bias point of Vds
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MGA545P8
MGA-545P8
MGA-545P8.
5988-8652EN
AV02-2058EN
TL24
Phycomp
TL22
10D110
10D210
F293
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: PMA2-162LN+ AN-60-053 LTE Base Station MMIC Amplifier Mini-Circuits PMA2-162LN+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require low noise and
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PMA2-162LN+
AN-60-053
PMA2-162LNÂ
M150261Â
AN60053
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Untitled
Abstract: No abstract text available
Text: BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which
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AN-60-010)
AN-60-010
M150261
AN60010
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Untitled
Abstract: No abstract text available
Text: Technical Note LTE Performance vs. Output Power Model: PHA-1+ AN-60-041 LTE Base Station MMIC Amplifier Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier is designed specifically for applications which require extremely linear performance, particularly
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20dBm
AN-60-041
M150261
AN60041
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Untitled
Abstract: No abstract text available
Text: Technical Note TD-SCDMA Performance vs. Output Power Model: PHA-1+ AN-60-042 TD-SCDMA Base Station MMIC Amplifier Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier is designed specifically for applications which require extremely linear performance, particularly
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AN-60-042
AN-60-042
M150261
AN60042
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Untitled
Abstract: No abstract text available
Text: Using the Catalog Specifications to Determine MMIC Reliability AN-60-030 Specification pages for MMIC (Microwave Monolithic Integrated Circuit) amplifiers in the Mini-Circuits catalog contain graphs of typical MTTF (Mean-Time-To-Failure) as a function of Junction Temperature. To use one of these graphs it is necessary to know the
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AN-60-030)
AN-60-030
M150261
AN60030
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LM 344 IC
Abstract: No abstract text available
Text: SCA-11 Product Description Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This am plifier is internally m atched with typical VSW R of
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19dBm
LM 344 IC
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transistor wideband marking 545
Abstract: psa-545 marking package 545 mmic ZX85-12G-S 25dBm N524 marking package 545 amplifier CA1389 F101 N5242A
Text: Ultra Low Noise MMIC Amplifier 50Ω PSA-545+ 0.05 to 4 GHz The Big Deal • Ultra Low Noise • High IP3 • Wideband, up to 4 GHz CASE STYLE: CA1389 Product Overview Mini-Circuits PSA-545+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 4
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PSA-545+
CA1389
transistor wideband marking 545
psa-545
marking package 545 mmic
ZX85-12G-S
25dBm
N524
marking package 545 amplifier
CA1389
F101
N5242A
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PSA-5452
Abstract: No abstract text available
Text: Ultra Low Noise MMIC Amplifier 50Ω PSA-545+ 0.05 to 4 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • High IP3 • Wideband, up to 4 GHz CASE STYLE: CA1389 Product Overview Mini-Circuits PSA-545+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 4
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CA1389
PSA-5452
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Untitled
Abstract: No abstract text available
Text: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G1+ 0.4 to 2.2 GHz The Big Deal • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 32-35 dBm 3mm x 3mm MCLP Pkg Product Overview Mini-Circuits PMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz
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