Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs
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EHA07312
Q62702-G0042
OT-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code
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Q62702-G0043
OT-143
collect38
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code
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EHA07312
Q62702-G0041
OT-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code
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BGA310
Q62702-G0041
OT143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA318
Q62702-G0043
OT143
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PDF
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marking bms
Abstract: No abstract text available
Text: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA312
Q62702-G0042
OT143
marking bms
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PDF
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type pd21
Abstract: siemens inductor B82412-A3221-K B82412-A3471-K CMY91 Q62702-M9 MMIC marking CODE 06
Text: CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1mA typ.
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Q62702-M9
vMY91
220nH
CMY91
100pF
1900MHz
type pd21
siemens inductor
B82412-A3221-K
B82412-A3471-K
CMY91
Q62702-M9
MMIC marking CODE 06
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IRF 1450
Abstract: km 1667 km 1667 datasheet mmic marking code j
Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23
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Q62702-M9
01-coil;
B82412-A3221-M
900MHz
1450MHz
1900MHz
IRF 1450
km 1667
km 1667 datasheet
mmic marking code j
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BGA2776
Abstract: SMD MARKING g5 snw-eq-608 MGU455
Text: BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BGA2776
BGA2776
SMD MARKING g5
snw-eq-608
MGU455
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SMA MARKING 1475
Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
SMA MARKING 1475
MurataGRM1555
mmic marking L
MMIC marking code 132
MMIC marking code R
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mmic code marking P 18
Abstract: MMIC marking CODE 06 rf mmic marking code 09 SOT363 CSH210 rf mmic marking code 26 SOT363
Text: GaAs MMIC CSH210 Preliminary Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device
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CSH210
OT363
OT363
CSH210
mmic code marking P 18
MMIC marking CODE 06
rf mmic marking code 09 SOT363
rf mmic marking code 26 SOT363
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rf mmic marking code 26 SOT363
Abstract: marking code 02 mmic mmic 26 SOT363 rf mmic marking code 09 SOT363 CSH210R MMIC code D mmic "Marking 19" rf mmic 26 SOT363 INFINEON SOT363 marking code AN mmic
Text: GaAs MMIC CSH210R Target Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device
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CSH210R
OT363
OT363
CSH210R
rf mmic marking code 26 SOT363
marking code 02 mmic
mmic 26 SOT363
rf mmic marking code 09 SOT363
MMIC code D
mmic "Marking 19"
rf mmic 26 SOT363
INFINEON SOT363
marking code AN mmic
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MMIC SOT 143 marking CODE 77
Abstract: MARKING SOT-143 C5
Text: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz
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YPS05178
Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
MARKING SOT-143 C5
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MMIC marking CODE c4
Abstract: No abstract text available
Text: GaAs MMIC CGB 241 Target Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V
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23dBm
16dBm
35dBc
IEEE802
06035J1R8BBT
LL1608-FS
MMIC marking CODE c4
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB 241 Target Datasheet • • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
35dBc
IEEE802
06035J1R8BBT
LL1608-FS
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PDF
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MMIC marking code R
Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
MMIC marking code R
MURATA LQW15A
Germanium power
mmic amplifier marking code l
silicon germanium
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sot363 gaAS
Abstract: CSH210 CSH210P 30GHz switch
Text: GaAs MMIC CSH210P Target Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • High IP3 • No supply Voltage needed • Positive Operating voltage range: 2.7 to 5 V • SOT363 package 2mm x 2mm
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CSH210P
OT363
OT363
CSH210P
sot363 gaAS
CSH210
30GHz switch
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Untitled
Abstract: No abstract text available
Text: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
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BGA2818
OT363
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MMIC SOT 143 marking CODE 77
Abstract: MMIC marking 77 CGY50 Q68000-A8370 MMIC marking code U MARKING SOT-143 C5
Text: SIEMENS GaAs MMIC CG Y 50 D a t a s h e e t * Single-stage monolithic microwave 1C MMICam plifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz
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VPS05175
Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
MMIC marking 77
CGY50
Q68000-A8370
MMIC marking code U
MARKING SOT-143 C5
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MMIC marking code SC
Abstract: BGM1013 MLG1608 SMD INDUCTOR 100 rf mmic marking code 09 SOT363
Text: BGM1013 MMIC wideband amplifier Rev. 04 — 1 May 2006 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1013
OT363
BGM1013
MMIC marking code SC
MLG1608
SMD INDUCTOR 100
rf mmic marking code 09 SOT363
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MMIC marking code 101
Abstract: siemens rs 806 siemens rs 1006 MMIC code 420 marking 340 mmic MMIC marking code R
Text: SIEMENS GaAs MMIC CGY62 Datasheet * Two-stage microwave broadband amplifier 1C * 50 Q input / output 'O perating voltage range: 2.7 to 5 V * High gain and output power typ.: G=20 dB, P.lrtB=17,5 dBm @ 4.5V, 1GHz * Frequency range 200 MHz . 2.5 GHz ESD:
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CGY62
Q68000-A8787
MMIC marking code 101
siemens rs 806
siemens rs 1006
MMIC code 420
marking 340 mmic
MMIC marking code R
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