Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MNOS MEMORY Search Results

    MNOS MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA91L750-100ILV Renesas Electronics Corporation Memory Controller Visit Renesas Electronics Corporation
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1EX24064ATA00I#S0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58V1001RT25VE Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58V66ATI10E Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation

    MNOS MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    692B

    Abstract: HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA00358
    Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry


    Original     		HN58S256A 32-kword ADE-203-692B 32768word 64-byte D-85622 692B HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA00358 PDF

    Hitachi DSA00171

    Abstract: No abstract text available
    Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry


    Original     		HN58S256A 32768-word ADE-203-692 32768word 64-byte D-85622 Hitachi DSA00171 PDF

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.


    Original     		HN58S256A 32-kword ADE-203-692B 32768word 64-byte Hitachi DSA002713 PDF

    gate drive protetion with transistor

    Abstract: HN58V256A HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12
    Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS


    Original     		HN58V256A HN58V257A 32768-word ADE-203-357 64-byte gate drive protetion with transistor HN58V256AFP-12 HN58V256AT-12 HN58V257AT-12 PDF

    gate drive protetion with transistor

    Abstract: HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85
    Text: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-410 A Z Rev. 1.0 May. 17, 1996 Description The Hitachi HN58C256A and HN58C257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS


    Original     		HN58C256A HN58C257A 32768-word ADE-203-410 64-byte HN58C257A0 gate drive protetion with transistor HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 PDF

    Renesas mnos

    Abstract: TBL Series HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-15E HN58S256AT-20 HN58S256AT-20E
    Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit REJ03C0150-0300Z (Previous ADE-203-692B (Z) Rev.2.0) Rev. 3.00 Feb.26.2004 Description The HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has


    Original     		HN58S256A 32-kword REJ03C0150-0300Z ADE-203-692B 32768-word 64-byte Renesas mnos TBL Series HN58S256AT HN58S256AT-15 HN58S256AT-15E HN58S256AT-20 HN58S256AT-20E PDF

    HN58S256A

    Abstract: HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047
    Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692A Z Rev. 1.0 Sep. 9, 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also


    Original     		HN58S256A 32768-word ADE-203-692A 64-byte HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047 PDF

    PRSP0008DG-B

    Abstract: REJ03C0138-0300 HN58W241000FPI HN58W241000FPIE HN58W241000I
    Text: HN58W241000I Two-wire serial interface 1M EEPROM 128-kword x 8-bit REJ03C0138-0300 Rev.3.00 Jul.12.2005 Description HN58W241000I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology


    Original     		HN58W241000I 128-kword REJ03C0138-0300 HN58W241000I 256-byte PRSP0008DG-B REJ03C0138-0300 HN58W241000FPI HN58W241000FPIE PDF

    HN58C256A

    Abstract: HN58C256P-20 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 RP 1240 M
    Text: HN58C256A, HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-410 Z Preliminary Rev. 0.0 Jun. 19, 1995 Description The Hitachi HN58C256A and HN58C257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS process


    Original     		HN58C256A, HN58C257A 32768-word ADE-203-410 HN58C256A 64-byte FP-28D) HN58C256P-20 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 RP 1240 M PDF

    HN58V256A

    Abstract: HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12 Hitachi DSA00777
    Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS


    Original     		HN58V256A HN58V257A 32768-word ADE-203-357 64-byte HN58V256AFP-12 HN58V256AT-12 HN58V257AT-12 Hitachi DSA00777 PDF

    NCR Microelectronics Division

    Abstract: No abstract text available
    Text: L Ü ^ Ü J 2051 512-BIT WAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD MIAMISBURG, OHIO 45342 _ . ¿ I 513 866-7471 TLX 28-8010 NCRMICRO, MSBG I ~L\ Electrically alterable ROM MNOS P-channel technology STANDARD 28 PIN SIDE BRAZE DIP


    OCR Scan     		512-BIT NCR Microelectronics Division PDF

    Untitled

    Abstract: No abstract text available
    Text: 128Kx 32 EEPROM MODULE molaic PUMA 3E4000X-12/15/20 Issue 1.1 : Septemberl 993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r inc. -v Pin Definition 4,194,304 bit MNOS High Speed EEPROM Features


    OCR Scan     		128Kx 3E4000X-12/15/20 A0-A16 C000XI-15 PDF

    MICROELECTRONICS 2451 warom memory

    Abstract: xs100ns ncr 400
    Text: PRELIMINARY 4096-BIT WAROM MEMORY NCR CORPORATION C>2-\5m (513) 866-7471 TLX 28-8010 NCRMICRO, MSBG MICROELECTRONICS DIVISION, 8181 BYERS ROAD, MIAMISBURG, OHIO 45342 Electrically alterable ROM MNOS P-channel technology STANDARD 22 PIN SIDE BRAZE DIP


    OCR Scan     		4096-BIT MICROELECTRONICS 2451 warom memory xs100ns ncr 400 PDF

    MICROELECTRONICS 2451 warom memory

    Abstract: NCR2451 ncr 400
    Text: NCR P R E LIM IN A R Y 4096-BIT WAROM MEMORY N CR CORPORATION (513) 866-7471 TLX 28-8010 NCRMICRO, MSBG MICROELECTRONICS DIVISION, 8181 BYERS ROAD, MIAMISBURG, OHIO 45342 Electrically alterable ROM MNOS P-channel technology STANDARD 22 PIN SIDE BRAZE DIP


    OCR Scan     		4096-BIT MICROELECTRONICS 2451 warom memory NCR2451 ncr 400 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit HITACHI ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÔs organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.


    OCR Scan     		HN58S256A 32-kword ADE-203-692B 32768word 64-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA N C R 512-BIT WAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG, OHIO 4534? I 513 866-7471 TLX 28-8010 NCRMICRO. MSBG Electrically alterable ROM MNOS P-channel technology STANDARD 22 PIN SIDE BRAZE DIP


    OCR Scan     		512-BIT PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit employing advanced MNOS memory technology and CMOS process


    OCR Scan     		HN58S256A 32768-word ADE-203-692 64-byte GD32b3fi 44Tb203 DD32b31 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry


    OCR Scan     		HN58S256A 32768-word ADE-203-692 32768word 64-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192-word x 8-bit employing advanced MNOS memory technology and


    OCR Scan     		HN58S65A 8192-word ADE-203-691 32-byte 44Tb203 G032bn PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word X 8-bit. Employing advanced MNOS memory technology and CMOS


    OCR Scan     		HN58V256A HN58V257A 32768-word ADE-203-357 64-byte PDF

    amp 2051 n

    Abstract: NCR Microelectronics Division
    Text: 2051 512-BIT WAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG, OHIO 45342 _ - I 513 866-7471 TLX 28-8010 NCRMICRO, MSBG I _ Electrically alterable ROM MNOS P-channel technology S T A N D A R D 28 P IN S ID E B R A ZE D IP


    OCR Scan     		512-BIT amp 2051 n NCR Microelectronics Division PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry


    OCR Scan     		HN58S65A 8192-word ADE-203-691 8192word 32-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-410 A Z Rev. 1.0 May. 17, 1996 Description The Hitachi HN58C256A and HN58C257A are a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit. Employing advanced MNOS memory technology and CMOS process and


    OCR Scan     		HN58C256A HN58C257A 32768-word ADE-203-410 64-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry


    OCR Scan     		HN58S256A 32768-word ADE-203-692 32768word 64-byte D-85622 PDF