2 Wavelength Laser Diode
Abstract: laser diode submount 915 submount
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 10 W, 9xx nm 63xx Series Key Features • 100 µm emitter width • High-efficiency, MOCVD quantum well design • High reliability The 63xx series diode lasers represent an advancement in high continuous-wave
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498-JDSU
5378-JDSU
63XXDIODELASER
2 Wavelength Laser Diode
laser diode submount
915 submount
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3335
Abstract: PIN-Photodiode-Array PHOTODIODE 4 CHANNEL ARRAY photodiode die WAFER Photodiode Array EMCORE photodiode array
Text: 1 x 12 GaAs PIN Photodiode Array Product Description EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high volume fabrication source of package ready die to meet the growing
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100x150
3335
PIN-Photodiode-Array
PHOTODIODE 4 CHANNEL ARRAY
photodiode die WAFER
Photodiode Array
EMCORE photodiode array
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LDX-3215-1065
Abstract: 1055 150X1
Text: LDX Optronics Inc. LDX-3215-1065 1065 nm 1.5 W Laser Diode High Power CW Operation 1.5 watts High Brightness-150 µm emitter size. Wavelength 1065 ± 10 nm standard The LDX-3215-1065 laser diode is a high power, multimode, infrared laser diode. These InGaAs broad-area, gain-guided lasers are produced using MOCVD growth which offers high
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LDX-3215-1065
Brightness-150
LDX-3215-1065
150x1
1055
150X1
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Untitled
Abstract: No abstract text available
Text: LDX-2106-640 • High Power CW Operation- 125 milliwatts • Highly Visible to the Eye. • Wavelength 640 ±5 nm Standard The LDX-2106-640 laser diode is a high power, multimode, visible red laser diode. These AlGaInP broad-area, gain-guided lasers are produced using MOCVD growth which offers high efficiency, low
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LDX-2106-640
LDX-2106-640
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675nm
Abstract: Laser Diode 10 pin
Text: LASER DIODE LC-100M-675C/D LC-100M-675C/D is 675nm laser diode based on GaInAlP multi quantum well structure fabricated by MOCVD semiconductor lasers. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.
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LC-100M-675C/D
LC-100M-675C/D
675nm
PoLC-100M-675C/D
Laser Diode 10 pin
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laser diode 905nm
Abstract: No abstract text available
Text: LASER DIODE LC-50S-905D LC-50S-905D is 905nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-905D is a CW single mode injection semiconductor laser
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LC-50S-905D
LC-50S-905D
905nm
laser diode 905nm
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Laser Diode for dvd 400 mW
Abstract: CS405065M5X TS 5225 laser diode 405nm 405nm Laser 5 mw
Text: CS405065M5X 405nm Compact Laser Diode Modules Key features Visible light λ = 405nm Output powers = 65mW CW Package type=5.6 mm Φ High reliability Applications Blu- ray Disc/HD DVD drive Other new application Laser Diode Solutions CS405065M5X is a MOCVD grown 405nm band InGaAs laser diode. It's
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CS405065M5X
405nm
CS405065M5X
Laser Diode for dvd 400 mW
TS 5225
laser diode 405nm
405nm Laser 5 mw
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CS4050205M
Abstract: 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw
Text: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4050205M is a MOCVD grown 405nm band GaN laser diode. It's an
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CS4050205M
406nm
405nm
CS4050205M
divers-vis/lcs/cs4050205m
405nm 5mW laser diode
405nm 20mW
TS 5225
405nm laser diode
405nm Laser 5 mw
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AlGaAs laser diode
Abstract: No abstract text available
Text: Laser Diodes LCQ78530S5N/M/P AlGaAs Laser Diode Ver. 0 2004 ♦OVERVIEW LCQ78530S5N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 30mW for industrial optical module
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LCQ78530S5N/M/P
LCQ78530S5N/M/P
780nm
LCQ78530S5-N/M/P
lcq78530s5n
AlGaAs laser diode
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UAEP3626-DE0
Abstract: Uniroyal Optoelectronics Uniroyal Technology POWER UAEP3626-X00 TO46 37525
Text: POWERBR ite ä ä Technology UAEP3626-X00 AllnGaP EPITAXIAL WAFER FEATURES AND BENEFITS •IMBEDDED DISTRIBUTIVE BRAGG REFLECTOR FOR SUPERIOR BRIGHTNESS •EXCELLENT WAVELENGTH AND BRIGHTNESS UNIFORMITY •NARROW SPECTRAL WIDTH •GROWN IN UOE HIGH VOLUME MOCVD
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UAEP3626-X00
UAEP3626-BC0
UAEP3626-DE0
UAEP3626-F00
UAEP3626-DE0
Uniroyal Optoelectronics
Uniroyal Technology POWER
UAEP3626-X00
TO46
37525
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N 821 Diode
Abstract: laser diode 905nm LCQ90510S5N n type laser diode
Text: LCQ90510S5-N/M/P InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW LCQ 90510S5-Serie is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application
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LCQ90510S5-N/M/P
90510S5-Serie
905nm
LCQ90510S5N
LCQ90510S5M
LCQ90510S5P
lcq90510s5-n
N 821 Diode
laser diode 905nm
LCQ90510S5N
n type laser diode
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Laser Diode for dvd 400 mW
Abstract: No abstract text available
Text: CS405140M5X 405nm Compact Laser Diode Modules Key features Visible light λ = 405nm Output powers = 140mW CW Package type=5.6 mm Φ High reliability Applications Blu- ray Disc/HD DVD drive Other new application Laser Diode Solutions CS405140M5X is a MOCVD grown 405nm band InGaAs laser diode. It's
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CS405140M5X
405nm
140mW
CS405140M5X
140mW.
Laser Diode for dvd 400 mW
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U 821 B
Abstract: 10mw 850nm to ld
Text: /&Q856103 AlGaAs Laser Diode Ver.1 APR.2005 ♦OVERVIEW /&46103 is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for industrial optical module
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Q856103
850nm
LCQ85010S5-P
lcq85010s5-n
U 821 B
10mw 850nm to ld
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20 watt laser diode
Abstract: No abstract text available
Text: TH-Q1110-B HIGH TEMPERATURE 600W QCW STACKED ARRAYS DESCRIPTION TH-Q1110-B is a conductively cooled laser diodes stack array designed to operate at very high temperature. Laser diode bar array benefit of fully mastered MOCVD quantum well technology. Appropriate design of epitaxial
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TH-Q1110-B
TH-Q1110-B
8018-ed2
20 watt laser diode
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SZA-5044
Abstract: ON 4959
Text: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and
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SZA-5044
EDS-103585
SZA-5044"
SZA-5044Z"
SZA-5044Z
SZA5044
ON 4959
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VPC3 C
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
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SZA-5044
10mil
SZA5044
EDS-103585
SZA-5044"
SZA5044
VPC3 C
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808 nm 100 mw
Abstract: laser diode for free space communication lens free space communication photodiode free space ATC-C500-35 DSASW0011867
Text: 0,5 W CW Laser Diode Model ATC-C500-35 Key features Applications • • • • • • • • • • • 0.5 W CW output power 35 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability Open heat sink, c-mount, ATC and TO-3
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ATC-C500-35
808 nm 100 mw
laser diode for free space communication
lens free space communication
photodiode free space
ATC-C500-35
DSASW0011867
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LED37FC-SMD5
Abstract: No abstract text available
Text: LED37FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 3.75 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED37FC-SMD5
LED37FC-SMD5
670x770
150-200mA
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LAPD-2-06-17-CHIP
Abstract: No abstract text available
Text: LAPD-2-06-17-CHIP TECHNICAL DATA Photodiode Chip die InGaAs LAPD-2-06-17-CHIP adopt InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The active area is Ø 2 mm respectively. Absolute Maximum Ratings Item Reverse Voltage Reverse Current
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LAPD-2-06-17-CHIP
LAPD-2-06-17-CHIP
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850 nm
Abstract: No abstract text available
Text: LDM850/5LT v 1.0 23.02.2015 Description LDM850/5LT is a 850 nm laser module containing a 850 nm MOCVD grown laser diode with quantum well structures. It is an ideal light source for bar code reader, measurement and medical applications. Maximum Ratings Parameter
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LDM850/5LT
LDM850/5LT
850 nm
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Untitled
Abstract: No abstract text available
Text: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD3
LED36-SMD3
300x300
150-200mA
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9315b
Abstract: SLD201V SLD201V3
Text: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.
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SLD201
SLD201U-3/V-3
SLD201U-3
SLD201V-3
9315b
SLD201V
SLD201V3
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302v
Abstract: No abstract text available
Text: SLD302V SONY 200m W High Power Laser Diode Description SLD 302V are gain-guided, high-power laser diodes fabricated by MOCVD. M OCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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SLD302V
E70776D13-HP
302v
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.
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Q012DE7
HL7831G/HG
HL7831G/HG
HL7831HG)
voltL7831G)
44Tb2QS
HL7831G)
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