"IGBT h-bridge"
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40
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MOD1004
/-20V
"IGBT h-bridge"
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40
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MOD1004
/-20V
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igbt catalog
Abstract: MOD1019
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG MODXX-XX SENSITRON SEMICONDUCTOR STANDARD HERMETIC IGBT MODULES FEATURES: • High Power Density • Low Saturation Voltage V C e (s a t • Low Thermal Resistance (Reuc) INDUSTRIAL IGBT PRODUCT MAP lc (Amps) CONFIG-URATION
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MOD1011
MOD1018
MOD1001
MOD1008
MOD1014
MOD1022
MOD1006
MOD1016
MOD1002
MOD1004
igbt catalog
MOD1019
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tc 3086
Abstract: d1018 d100-5 D1016
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC IGBT MODULES H Y P E R F A S T IG B T D E V IC E S W IT H A F A S T R E V E R S E R E C O V E R Y D IO D E IG B T C H A R A C T E R IS T IC S Continuous Collector Current Continuous Collector
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OCR Scan
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PDF
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MOD1001
MOD1003
MOD1004
D1005
35U--
tc 3086
d1018
d100-5
D1016
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