Untitled
Abstract: No abstract text available
Text: Engineering Development Model Voltage Controlled Oscillator ROS-EDR4979/2 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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CK605
ROS-EDR4979/2
ROS-EDR4979/2
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SiB488DK
Abstract: No abstract text available
Text: SPICE Device Model SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB488DK
18-Jul-08
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Si7143DP
Abstract: 26 258
Text: SPICE Device Model Si7143DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7143DP
18-Jul-08
26 258
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65750
Abstract: No abstract text available
Text: SPICE Device Model SiB455EDK Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB455EDK
18-Jul-08
65750
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA406DJ Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA406DJ
18-Jul-08
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14051
Abstract: VLF4012AT-6R8MR96 VLF4010S VLF4012AT-2R2M1R5 VLF4014ST-2R2M1R9 16174 VLF4012AT-100MR50-2 VLF4010AT-4R7M1R0 VLF4010ST-3R3M1R2 12629
Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / VLF4010A Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] VLF4010AT-4R7M1R0 4.7 5992.5 1.3652 0.18 VLF4010AT-6R8MR81 6.8 8330.6 1.3636 0.28
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VLF4010A
VLF4010AT-4R7M1R0
VLF4010AT-6R8MR81
VLF4010AT-100MR64
VLF4010S
VLF4010ST-1R0N1R9
VLF4010ST-2R2M1R4
VLF4010ST-3R3M1R2
VLF4014AT-4R7M1R1
VLF4014AT-100MR90
14051
VLF4012AT-6R8MR96
VLF4012AT-2R2M1R5
VLF4014ST-2R2M1R9
16174
VLF4012AT-100MR50-2
VLF4010AT-4R7M1R0
VLF4010ST-3R3M1R2
12629
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB406EDK
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiB488DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB488DK
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SLF12575-H
Abstract: SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603
Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / SLF12555 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] SLF12555T-6R0N3R6-PF 6 7248.8 5.5282 0.0164 SLF12555T-100M3R4-PF 10 9944.8 3.9877
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SLF12555
SLF12555T-6R0N3R6-PF
SLF12555T-100M3R4-PF
SLF12555T-150M2R8-PF
SLF12555T-220M2R3-PF
SLF12555T-330M1R9-PF
SLF12555T-470M1R6-PF
SLF12555T-680M1R3-PF
SLF12555T-101M1R1-PF
SLF12555T-151MR88-PF
SLF12575-H
SLF12555T-680M1R3
SLF12565T-100M4R8-H
SLF12565T-331MR87-H
SLF12575T-331M1R0-PF
SLF12565T-101M1R6-PF
SLF12575T-100M5R4
SLF12575T-330M3R2-H
SLF12565-H
106603
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiB406EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB406EDK
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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siA975
Abstract: SIA975DJ DSA00206566
Text: SPICE Device Model SiA975DJ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA975DJ
18-Jul-08
siA975
DSA00206566
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA406DJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiA406DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA906EDJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
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SiA906EDJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7143DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7143DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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HP 3458
Abstract: 5500A LCD 1604A HP 3458a 3458a Fluke 73 Multimeter 800893 elastomeric FLUKE 75 Fluke Multimeter repair
Text: Model 705 Loop Calibrator Calibration Information W Warning To avoid electrical shock, remove test leads and any input signals from the Model 705 Loop Calibrator before opening the case. Caution The Model 705 Loop Calibrator contains parts that can be damaged by static
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IEC6LR61
HP 3458
5500A
LCD 1604A
HP 3458a
3458a
Fluke 73 Multimeter
800893
elastomeric
FLUKE 75
Fluke Multimeter repair
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ1470AEH www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SQ1470AEH
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM25P10-138 www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SUM25P10-138
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4420DY
Abstract: No abstract text available
Text: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4420DY
09-May-02
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V5805
Abstract: sup90n04-4m0p
Text: SPICE Device Model SUP90N04-4m0P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N04-4m0P
18-Jul-08
V5805
sup90n04-4m0p
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A 69157
Abstract: 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255
Text: SPICE Device Model SUM90N04-3m4P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM90N04-3m4P
18-Jul-08
A 69157
69157
mosfet 69157
V5805
SUM90N04-3m4P
S-71488
S-71488Rev
A7255
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Si4420DY
Abstract: No abstract text available
Text: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4420DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Model 6573A Alligator Clip IEC 1010 With Boot 1000V CAT III 10A FEATURES: • Alligator Clip will attach to terminals up to .30” outside diameter. • Designed to comply to International Safety Standard IEC 1010 • Adapts to sheathed banana plug test leads such as Pomona Model 5908A
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573A-*
\d6573A
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Untitled
Abstract: No abstract text available
Text: Model 6573A Alligator Clip With Boot for sheathed banana plug, .166” 4mm (banana plug not included) FEATURES: Complies with International Safety Standard IEC 1010-2-031 Alligator will clip around terminals up to .30” (7,62mm) outside diameter. Attaches to standard .166” (4mm) sheathed banana plugs, such as Pomona model 5907A test leads.
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573A-0
573A-2
573A-02
Tolera490-2361
D1096779
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Untitled
Abstract: No abstract text available
Text: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62
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