MOROCCO B 108 B
Abstract: No abstract text available
Text: r=7 SGS-1H0MS0N SD1460 * 7# . M »ilL§O T M []@ § RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS « . . . . • 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 GAIN dB PIN CONNECTION a 1 (of jO 4 DESCRIPTION
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SD1460
SD1143
MOROCCO B 108 B
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choke vk200
Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM
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SD1460
SD1460
choke vk200
VK200 rfc
vk200 rfc with 6 turns
STMicroelectronics marking code date
marking code stmicroelectronics
vk200 rf choke
VK200-19/4B
STMicroelectronics marking code
Date Code Marking STMicroelectronics
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vk200 rfc with 6 turns
Abstract: vk200 choke SD1460 vk200* FERROXCUBE vk200 rf choke VK200 rfc VK200 TSD-1460 3-M-K-6098
Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM
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SD1460
SD1460
vk200 rfc with 6 turns
vk200 choke
vk200* FERROXCUBE
vk200 rf choke
VK200 rfc
VK200
TSD-1460
3-M-K-6098
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ARCO 100PF
Abstract: SD1457
Text: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF
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SD1457
SD1457
ARCO 100PF
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capacitor 100uF 63V
Abstract: No abstract text available
Text: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF
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SD1457
SD1457
capacitor 100uF 63V
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Untitled
Abstract: No abstract text available
Text: SD56150 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed
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SD56150
SD56150
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M252
Abstract: SD56150
Text: SD56150 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed
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SD56150
SD56150
M252
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LET8180
Abstract: M252
Text: LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE M252
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LET8180
LET8180
M252
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ESM6045AV
Abstract: 62us
Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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ESM6045AV
ESM6045AV
62us
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ESM6045AV
Abstract: No abstract text available
Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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ESM6045AV
ESM6045AV
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ESM6045AV
Abstract: No abstract text available
Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:
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ESM6045AV
ESM6045AV
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ESM6045AV
Abstract: No abstract text available
Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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ESM6045AV
ESM6045AV
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON *7W » TSH151 RfflO g[S ilL[i©TO M©i WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V4is VERY FAST SETTLING TIME : 70ns (0.1% VERY HIGH INPUT IMPEDANCE
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TSH151
150MHz
200V4is
TheTSH151
TSH151
00bE4E5
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diode BZW50-56
Abstract: BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
Text: BZW50-10,B/180,B TRANSILTM FEATURES PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGERANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection
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BZW50-10
B/180
diode BZW50-56
BZW50-12
BZW50-15
BZW50-18
BZW50-22
BZW50-27
BZW50-33
BZW50-39
BZW50-47
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diode BZW50-56
Abstract: DIODE bzw50-33 BZW50-33B BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
Text: BZW50-10,B/180,B TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION R6 Transil diodes provide high overvoltage protection
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BZW50-10
B/180
diode BZW50-56
DIODE bzw50-33
BZW50-33B
BZW50-15
BZW50-18
BZW50-22
BZW50-27
BZW50-33
BZW50-39
BZW50-47
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STF6045AV
Abstract: RC VOLTAGE CLAMP snubber circuit
Text: STF6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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STF6045AV
STF6045AV
RC VOLTAGE CLAMP snubber circuit
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Untitled
Abstract: No abstract text available
Text: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1
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STTB12006TV1
STTB12006TV2
G73b53
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H150
Abstract: TSH150 TSH150C TSH150I
Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 (Plastic Package) DESCRIPTION: The TSH150 is a wideband monolithic operational
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TSH150
150MHz
TSH150
MILSTD883CClass2.
H150
TSH150C
TSH150I
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TSH150
Abstract: TSH150I
Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% DESCRIPTION D SO8 (Plastic Micropackage) The TSH150 is a wideband monolithic operational
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TSH150
150MHz
TSH150
MILSTD883C-Classent
TSH150I
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TSH151
Abstract: TSH151I TSH1511
Text: TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V/µs VERY FAST SETTLING TIME : 70ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION The TSH151 is a wideband monolithic operational
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TSH151
150MHz
TSH151
TSH151I
TSH1511
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H150
Abstract: TSH150 TSH150C TSH150I
Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 (Plastic Package) DESCRIPTION: The TSH150 is a wideband monolithic operational
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TSH150
150MHz
TSH150
MILSTD883CClass2.
H150
TSH150C
TSH150I
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F126
Abstract: TP30-100 TP30-120 TP30-130 TP30-180 TP30-200 TP30-220 TP30-62 TP30-68 BELLCORETR-NWT-000974
Text: TP30-xxx Series TRISILTM PRELIMINARY DATASHEET FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE F126 DESCRIPTION
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TP30-xxx
TR-1089-CORE:
BELLCORETR-NWT-000974:
F126
TP30-100
TP30-120
TP30-130
TP30-180
TP30-200
TP30-220
TP30-62
TP30-68
BELLCORETR-NWT-000974
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TSH151
Abstract: TSH151C TSH151I
Text: TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V/µs VERY FAST SETTLING TIME : 70ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION: The TSH151 is a wideband monolithic operational
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TSH151
150MHz
TSH151
TSH151C
TSH151I
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H150
Abstract: TSH150 TSH150C TSH150I TSH150M
Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 (Plastic Package) DESCRIPTION: The TSH150 is a wideband monolithic operational
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TSH150
150MHz
TSH150
MILSTD883CClass2.
H150
TSH150C
TSH150I
TSH150M
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