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    BUZ10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


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    BUZ10 O-220 175oC BUZ10 PDF

    buz10 equivalent

    Abstract: BUZ10 buz10 equivalent input id datecode G1 st 220 f1
    Text: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A -TO-220 STripFET POWER MOSFET T YPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


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    BUZ10 -TO-220 175oC O-220 buz10 equivalent BUZ10 buz10 equivalent input id datecode G1 st 220 f1 PDF

    BUZ10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


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    BUZ10 100oC 175oC O-220 BUZ10 PDF

    BUZ10

    Abstract: buz10 MOROCCO
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


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    BUZ10 100oC 175oC O-220 BUZ10 buz10 MOROCCO PDF

    BUZ10

    Abstract: buz10 equivalent stmicroelectronics datecode
    Text: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


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    BUZ10 O-220 175oC BUZ10 buz10 equivalent stmicroelectronics datecode PDF

    buz10

    Abstract: No abstract text available
    Text: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


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    BUZ10 O-220 175oC O-220 buz10 PDF

    buz10 MOROCCO

    Abstract: BUZ10 morocco buz10
    Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


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    BUZ10 O-220 175oC buz10 MOROCCO BUZ10 morocco buz10 PDF

    irf540 mosfet control motor

    Abstract: std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16
    Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06


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    O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L irf540 mosfet control motor std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON !L iO T iQ £ I B U Z 1 0 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 V dss R DS(on Id 50 V < 0.07 a 20 A • TYPICAL R Ds(on) = 0.06 Q m AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    BUZ10 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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