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    MOS CONTROLLED THYRISTOR Search Results

    MOS CONTROLLED THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRT155C81A475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155C81A475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    MOS CONTROLLED THYRISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMCTTA32N14A10

    Abstract: TA32N14A10
    Text: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.


    Original     		TA20N20A10 63pb/37sn SMCTTA32N14A10 TA32N14A10 PDF

    TA65N14A10

    Abstract: 1E21 MCT thyristor SMCTTA65N14A10 RG-47
    Text: SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		TA65N14A10 63pb/37sn 260oC TA65N14A10 1E21 MCT thyristor SMCTTA65N14A10 RG-47 PDF

    TA32N14A10

    Abstract: SCR 3KA 37sn TA32N14 MOS Controlled Thyristor RG-47
    Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		TA32N14A10 63pb/37sn 260oC TA32N14A10 SCR 3KA 37sn TA32N14 MOS Controlled Thyristor RG-47 PDF

    TA32N14A10

    Abstract: MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron
    Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		TA32N14A10 63pb/37sn 260oC TA32N14A10 MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron PDF

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCT thyristor 1000v "mos controlled thyristor"
    Text: ~ MCT/IQBT/DI0DESI2 MOS CONTROLLED THYRISTORS PAGE SELECTION G U ID E .


    OCR Scan     		TA65P100F1 TA75P60E1 MOS Controlled Thyristor MCT thyristor MCT thyristor 1000v "mos controlled thyristor" PDF

    MOS-Controlled Thyristor

    Abstract: SMCTTA65N14A10 MCT thyristor SMCTAA65N14A10 63SN 37PB SOLDER SMCTTA65N
    Text: SMCTTA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, ThinPak Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 SolidtronTM This voltage controlled (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a


    Original     		SMCTTA65N14A10 63pb/37sn 260oC SMCTAA65N14A10 04242009-NB-0011 MOS-Controlled Thyristor SMCTTA65N14A10 MCT thyristor SMCTAA65N14A10 63SN 37PB SOLDER SMCTTA65N PDF

    MCT thyristor

    Abstract: TA65N14A10 MOS Controlled Thyristor MOS-Controlled Thyristor SMCTTA65N14A10
    Text: SILICON^ ^POWGR SMCT TA65N14A10 Semiconductor Discharge Switch N-MOS Controlled Thyristor MCT , ThinPak


    OCR Scan     		TA65N14A10 MCT thyristor MOS Controlled Thyristor MOS-Controlled Thyristor SMCTTA65N14A10 PDF

    SMCTTA32N14A10

    Abstract: MOS-Controlled Thyristor MCT thyristor MOS Controlled Thyristor
    Text: SMCTTA32N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com N-MOS VCS, ThinPakTM Data Sheet Rev 2 - 07/10/2008 Description Package This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a


    Original     		SMCTTA32N14A10 260oC SMCTTA32N14A 04242009-NB-0007 SMCTTA32N14A10 MOS-Controlled Thyristor MCT thyristor MOS Controlled Thyristor PDF

    MOS-Controlled Thyristor

    Abstract: SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type
    Text: SMCTAA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 This Voltage Controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five


    Original     		SMCTAA65N14A10 O-247 O-247 260oC 04242009-NB-0012 MOS-Controlled Thyristor SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type PDF

    MOS-Controlled Thyristor

    Abstract: SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247
    Text: SMCTAA32N14A10 Advanced Pulse Power Device 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 12/19/07 Description Package Size - 4 This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five


    Original     		SMCTAA32N14A10 O-247 O-247 04242009-NB-0010 MOS-Controlled Thyristor SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247 PDF

    MOS Controlled Thyristor

    Abstract: TA49226
    Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    OCR Scan     		MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226 PDF

    MCT thyristor

    Abstract: TA32N14A10 MOS-Controlled Thyristor el 847 MOS Controlled Thyristor
    Text: SILICON^ ^POW GR Application Notes SMCT TA32N14A10 Semiconductor Discharge Switch N-MOS Controlled Thyristor MCT , ThinPak


    OCR Scan     		TA32N14A10 MCT thyristor TA32N14A10 MOS-Controlled Thyristor el 847 MOS Controlled Thyristor PDF

    MCT harris

    Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
    Text: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    Original     		MCT3A65P100F2 MCT3D65P100F2 150nts 1-800-4-HARRIS MCT harris M65P100F2 TA49226 scr 2032 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v PDF

    AA65N14A10

    Abstract: aa65n14 Solidtron SCR 3KA KA NMOS RG-47 MOS-Controlled Thyristor
    Text: SMCT AA65N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with


    Original     		AA65N14A10 O-247 O-247 FeaO-247 AA65N14A10 aa65n14 Solidtron SCR 3KA KA NMOS RG-47 MOS-Controlled Thyristor PDF

    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		CTG35P60F1 -600V PDF

    MCT thyristor

    Abstract: MOS-Controlled Thyristor MOS Controlled Thyristor Silicones GE thyristor WL 002 A
    Text: S ILIC O N ^ POWGR , s u c t t a 32NUA10 Semiconductor Discharge Switch N-MOS controlled Thyristor MCT , ThinPak - (MCT) mountedonaThinPak®, ceramic“chip-scal^hybrid. rp— capability. Thissemi- 7 =„1,1


    OCR Scan     		PDF

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS PDF

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981 PDF

    NTE5457

    Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5456 NTE5453 NTE5454 NTE5455 SCR NTE5457 PDF

    NTE5457

    Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 SCR NTE5457 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive PDF

    Untitled

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)


    OCR Scan     		MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218) PDF

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode PDF

    NTE5457

    Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be


    Original     		NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 NTE5453 NTE5454 PDF