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    MOS FET MARKING K4 Search Results

    MOS FET MARKING K4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET MARKING K4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Pch MOS FET

    Abstract: SSM6L05FU
    Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Q1: Ron = 0.8 Ω max (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V)


    Original     		PDF SSM6L05FU Pch MOS FET SSM6L05FU

    mos fet marking k4

    Abstract: Pch MOS FET SSM6L05FU
    Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package · Low on resistance · Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V)


    Original     		PDF SSM6L05FU mos fet marking k4 Pch MOS FET SSM6L05FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)


    Original     		PDF SSM6L05FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)


    Original     		PDF SSM6L05FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)


    Original     		PDF SSM6L05FU

    SSM6L05FU

    Abstract: k415
    Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)


    Original     		PDF SSM6L05FU SSM6L05FU k415

    B0911

    Abstract: DN2470
    Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF DN2470 DSFP-DN2470 B091108 B0911

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The DN2470 is a low threshold depletion-mode normally-on


    Original     		PDF DN2470 DN2470 DSFP-DN2470 B041311

    mos fet marking k4

    Abstract: DN2470 125OC DN2470K4-G transistor MARKING K4 DMOS
    Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF DN2470 DN2470 DSFP-DN2470 B103108 mos fet marking k4 125OC DN2470K4-G transistor MARKING K4 DMOS

    125OC

    Abstract: DN2470 DN2470K4-G
    Text: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		PDF DN2470 DN2470 DSFP-DN2470 B041311 125OC DN2470K4-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		PDF DN2470 DN2470 DSFP-DN2470 C062513

    2sk4075

    Abstract: TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn Tin


    Original     		PDF 2SK4075 2SK4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY O-252 O-252) TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407

    K4076

    Abstract: 2SK4076 LOT CODE NEC 2SK407 2SK4076-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4076 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4076-ZK-E1-AY Pure Sn Tin


    Original     		PDF 2SK4076 2SK4076 2SK4076-ZK-E1-AY O-252 2SK4076-ZK-E2-AY O-252) K4076 LOT CODE NEC 2SK407 2SK4076-ZK

    k4075

    Abstract: 2SK4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn Tin 2SK4075-ZK-E2-AY


    Original     		PDF 2SK4075 2SK4075 2SK4075-ZK-E1-AY O-252 2SK4075-ZK-E2-AY O-252) k4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40

    mos fet marking k4

    Abstract: VP5225 VP5225K4 l5 transistor
    Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF VP5225 O-252, DSFP-VP5225 NR053008 mos fet marking k4 VP5225 VP5225K4 l5 transistor

    Untitled

    Abstract: No abstract text available
    Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications


    Original     		PDF VP5225 O-252, DSFP-VP5225 NR053008

    Untitled

    Abstract: No abstract text available
    Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF VP5225 O-252, DSFP-VP5225 NR122107

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 O-252, DSFP-DN3765 NR111707

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 O-252, DSFP-DN3765 NR111207

    D-PAK package

    Abstract: No abstract text available
    Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF VP5225 O-252, DSFP-VP5225 NR031708 D-PAK package

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of


    Original     		PDF DN3765 DSFP-DN3765 A103108

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A091208

    mos fet marking k4

    Abstract: dn37 DN3765 DN3765K4-G
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A103108 mos fet marking k4 dn37 DN3765 DN3765K4-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		PDF DN3765 DSFP-DN3765 A070113