pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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QS6M4
Abstract: TSMT6 Pch MOS FET m04 fet
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.
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Untitled
Abstract: No abstract text available
Text: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance
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TPC8407
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Untitled
Abstract: No abstract text available
Text: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance
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TPC8407
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TPC8407
Abstract: B 817 c
Text: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance
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TPC8407
TPC8407
B 817 c
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2N6660
Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor
Text: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.
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2N6659
2N6660
2N6661
N6660
2N6661
bbS3T31
D03b22S
2N6660
2N6659
TP 1322
2N6661 transistor
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SN7401
Abstract: DS8812N DS8810J VU14A m7403 SN74* inverter DS7810J SN5401 7403 N14A
Text: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s
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DS7810/DS8810
DS7811/DS8811
DS7812/DS8812
DM5401/DM7401
SN5401
/SN7401
5403/SN
5405/DM7405
SN5405/SN7405)
DS7810,
SN7401
DS8812N
DS8810J
VU14A
m7403
SN74* inverter
DS7810J
7403
N14A
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SN7401
Abstract: SN5401 W14A DS7810J m7403 SN7403 DS8812N 7403 MM506 N14A
Text: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s
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DS7810/DS8810
DS7811/DS8811
DS7812/DS8812
DM5401/DM7401
SN5401
/SN7401
5403/SN
5405/DM7405
SN5405/SN7405)
DS7810,
SN7401
W14A
DS7810J
m7403
SN7403
DS8812N
7403
MM506
N14A
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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Untitled
Abstract: No abstract text available
Text: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.
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2N6659
2N6660
2N6661
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MC14050B
Abstract: MC14049B MC14XXXBCL MC14XXXBCP MC14XXXBD mc14050B CMOS Buffer MOTOROLA MC14049B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14049B MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS
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MC14049B
MC14050B
MC14049B
MC14050B
MC14049B/D*
MC14049B/D
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
mc14050B CMOS Buffer
MOTOROLA MC14049B
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QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET
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mitsubishi PM20CSJ060
Abstract: mitsubishi PM30CSJ060 Mitsubishi Electric IGBT MODULES Mitsubishi IPM module PS11015 mitsubishi power Modules PM30ctj060-3 m57962l M57959L/M57962L pm25rsb120
Text: Power Modules Power Modules MOS Power Modules BIPOLAR Preceding Page MITSUBISHI ELECTRIC CORPORATION Power Modules MOS Guidance IGBT Modules CIB Converter Inverter Brake Modules Intelligent Power Modules (IPMs) Hybrid ICs Applications Preceding Page © MITSUBISHI ELECTRIC CORPORATION
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RM50DA/CA/C1A-XXS
RM25HG-24S
RM400HA-24S
RM35HG-34S
RM400HV-34S
RM300CA-9W
RM60SZ-6S
RM100SZ-6S
RM10TN-H
mitsubishi PM20CSJ060
mitsubishi PM30CSJ060
Mitsubishi Electric IGBT MODULES
Mitsubishi IPM module
PS11015
mitsubishi power Modules
PM30ctj060-3
m57962l
M57959L/M57962L
pm25rsb120
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rg10 diode
Abstract: DIODE RG10 RG10 QS6M4
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET
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MC14049
Abstract: MC14049BCP MC14050BCP 948F MC14049B MC14049BD MC14049BDR2 MC14049BF MC14050B MC14050BD
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14050B
r14525
MC14049B/D
MC14049
MC14049BCP
MC14050BCP
948F
MC14049BD
MC14049BDR2
MC14049BF
MC14050BD
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MC14049BCP
Abstract: MC14050B MC14050BCP 948F MC14049B MC14049BD MC14049BDR2 MC140XXBCP
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14050B
r14525
MC14049B/D
MC14049BCP
MC14050BCP
948F
MC14049BD
MC14049BDR2
MC140XXBCP
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mc14050b
Abstract: MC14050BCP
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14050B
MC14050BCP
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Untitled
Abstract: No abstract text available
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14050B
MC14049B/D
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MC14050BDG
Abstract: No abstract text available
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14050B
MC14049B/D
MC14050BDG
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MC14049B
Abstract: 948F MC14049BCP MC14049BD MC14049BDR2 MC14049BF MC14050B MC14050BCP MC14050BD
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14050B
theser14525
MC14049B/D
948F
MC14049BCP
MC14049BD
MC14049BDR2
MC14049BF
MC14050BCP
MC14050BD
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PDF
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Untitled
Abstract: No abstract text available
Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power
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MC14049B,
MC14050B
MC14049B
MC14049B/D
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fairchild mos
Abstract: ScansUX979
Text: JANUARY 1968 MOS MONOLITHIC 4 CHANNEL SWITCH MOS INTEGRATED CIRCUIT 4 CHANNEL SWITCH GENERAL DESCRIPTION — The 3700 is a four-channel multiplex switch with all channel blanking. It is a monolithic integrated circuit utilizing Planar“ II, P-Channel enhancement mode MOS technology.
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