HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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400X
Abstract: C1995 DS1628 DS1628J DS3628 DS3628J DS3628N J20A
Text: DS1628 DS3628 Octal TRI-STATE MOS Drivers General Description Features The DS1628 DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems The drivers’ output VOH is specified at 3 4V to provide additional noise
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DS1628
DS3628
400X
C1995
DS1628J
DS3628J
DS3628N
J20A
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DS3647AN
Abstract: C1995 D16C DS3647A DS3647AD N16A
Text: DS3647A Quad TRI-STATE MOS Memory I O Register General Description The DS3647A is a 4-bit I O buffer register intended for use in MOS memory systems This circuit employs a fall-through latch for data storage This method of latching captures the data in parallel with the output thus eliminating the delays
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DS3647A
DS3647AN
C1995
D16C
DS3647AD
N16A
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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CD4039AD
Abstract: CD4039 CD4036AD cd4036 CD4036A ICAN-6716 CENTRALAB ROTARY SWITCH CD4039AK cd4039a-direct CD4036AK
Text: COS MOS 4-Word by 8-Bit Random-Access NDRO Memory Binary Addressing Direct Word-Line Addressing Special Features: • COS/MOS logic compatibility at all input and output terminals ■ Memory bit expansion ■ Memory word expansion via Wire-OR capability at the
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CD4036AD,
CD4036AK
CD4039AD,
CD4039AK
CD4036A
CD4029A
CD4039A
CD4018A
CD4036A"
CD4039AD
CD4039
CD4036AD
cd4036
ICAN-6716
CENTRALAB ROTARY SWITCH
cd4039a-direct
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Untitled
Abstract: No abstract text available
Text: MOS Memory Handling Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due
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HM4816A
Abstract: HM4816
Text: HM4816 16384-wordX 1-bit Dynamic Random Access Memory The HM4816 is a new generation MOS dynamic RAM circuit organized as 16,384 words by 1 bit. As a state-of-the art MOS memory device, the HM4816 16K RAM incorporates advanced circuit techniques designed to provide wide
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HM4816
16384-wordX
HM4816
MK4027
HM4816A
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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cleanthrough
Abstract: No abstract text available
Text: E2G0008-17-41 O K I Semiconductor MOS Memory Handling Guideline MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due
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E2G0008-17-41
FRW-17
cleanthrough
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PDF
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TL/H/5875-11
Abstract: No abstract text available
Text: DS1628/DS3628 National 2 Semiconductor DS1628/DS3628 Octal TRI-STATE MOS Drivers General Description Features The DS1628/DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems. The drivers’
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DS1628/DS3628
DS1628/DS3628
DS3628.
DS1628
DS3628
TL/H/5875-11
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58752
Abstract: No abstract text available
Text: DS1628/DS3628 S3 National ÆM Semiconductor DS1628/DS3628 Octal TRI-STATE MOS Drivers General Description Features The DS1628/DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems. The drivers’
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DS1628/DS3628
20-pin
DS1628/DS3628
DS1628
DS3628.
DS3626
58752
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6 pin sim
Abstract: DIP-18C-C01
Text: FUJITSU m ic r o e le c t r o n ic s MOS 4096-BIT STATIC RANDOM ACCESS MEMORY MBM2149-45 MBM2149-55L MBM2149-70L DESCRIPTION The Fujitsu MBM2149 is a 1024 word by 4-bit static random ac cess memory fabricated using N-channel silicon gate MOS tech nology. The memory is fully static
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4096-BIT
MBM2149
MBM2149-45
MBM2149-55L
MBM2149-70L
6 pin sim
DIP-18C-C01
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PDF
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HM4816
Abstract: HM4816 equivalent MK4027 Hitachi Scans-001 HP-65 MOSTEK 4816
Text: HM4816 1 6 3 8 4 -w o rd X 1-bit Dynamic Random A ccess Memory The HM4816 is a new generation MOS dynamic RA M circuit organized as 16,384 words by 1 bit. As a state-of-the art MOS memory device, the HM4816 16K RA M incorporates advanced circuit techniques designed to provide wide
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HM4816
16384-wordX
HM4816
MK4027
HM4816-
HM481
HM4816 equivalent
MK4027
Hitachi Scans-001
HP-65
MOSTEK 4816
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Untitled
Abstract: No abstract text available
Text: MQ8 Memory HandHng Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due
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FRW-17
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DS3647AN
Abstract: No abstract text available
Text: DS3647A ^National J y fl Semiconductor DS3647A Quad TRI-STATE MOS Memory I/O Register General Description The DS3647A is a 4-bit I/O buffer register intended for use in MOS memory systems. This circuit employs a fall-through latch for data storage. This method of latching captures the
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DS3647A
tl/f/8354-8
tl/f/8354-10
tl/f/8354-9
tl/f/8354-11
tl/f/8354-12
DS3647ALATCHINPUTS
tl/f/b354â
DS3647AN
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MM5220
Abstract: MM5220AEN
Text: National Semiconductor Semiconductors MOS-ROM S MM522Q 1024 Bit Read Only Memory REFERENCE TA B LE Code Stock No. MM5220AEN 34853.C GENERAL DESCRIPTION The MM5220 is a 1024-bit static read only memory. It is a P-channel enhancement mode m onolithic MOS integrated circu it utilizing low threshold
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MM522Q
MM5220AEN
MM5220
1024-bit
128-8-bit
256-4-bit
ASK11-7
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ic vertical la 78141
Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices
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CH-8953
ic vertical la 78141
IC LA 78141 schematic
LA 78141 tv application circuit
4116 ram
tda 78141
TMS4500
LA 78141 VERTICAL
21L14
mitsubishi elevator circuit diagram
4464 64k dram
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TC524256
Abstract: tc524256z
Text: TOSHIBA MOS MEMORY PRODUCTS TC524256P/Z/J-10, TC524256P/Z/J-12 DESCRIPTION The TC524256P/Z/J is a CMOS Multiport memory equipped with a 262,144-wordx 4 bit dynamic random access memory RAM port and a 512-word * 4 bit static serial access memory(SAM) port.
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TC524256P/Z/J-10,
TC524256P/Z/J-12
TC524256P/Z/J
144-wordx
512-word
TC524256
tc524256z
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SDS S4 24V
Abstract: SI03 TC5242
Text: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,144-wordx 4 bit dynamic random access memory RAM port and a 512-word x 4 bit static serial access memory(SAM) port.
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TC524257P/Z/J-10,
TC524257P/Z/J-12
TC524257P/Z/J
144-wordx
512-wordx
Q935MAX
ZIP28-P-400
B-100
TC524257P/Z/J-1
TC524257IÂ
SDS S4 24V
SI03
TC5242
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AM2964B
Abstract: No abstract text available
Text: Am a 2964 B Advanced Micro Devices Dynamic Memory Controller DISTINCTIVE CHARACTERISTICS • • • Dynamic Memory Controller for 16K and 64K MOS dynamic RAMs 8 -Bit Refresh Counter for refresh address generation, has clear input and terminal count output
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Am2964B
WFOOI930
WF001940
WF001880
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,
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TC59R7218XB
72-Mbit
600MHz
800MHz
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intel 2708 eprom
Abstract: MB8518 memory EPROM 2708 IT 8518 8518H
Text: MB 8518H UV ERASABLE FU JITSU 8192-BIT READ ONLY MEMORY ‘" 'I.MUII II Iti II II S - 32- 0 |Z L 6- 002500 Í - 2 5~0Ù MOS 8192-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MB 8518 is a high speed 8192-bit static N-channel MOS
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8192-BIT
24-pin
intel 2708 eprom
MB8518
memory EPROM 2708
IT 8518
8518H
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PDF
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256X4
Abstract: 1024x4 AM2168 Am91L22
Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active
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Am91L22-35
L22-45
Am9122-60
256x4
Am2147
Am2147-45
Am2147-65
Am2147-70
Am21L47-45
Am21147
1024x4
AM2168
Am91L22
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DS1647D
Abstract: DS3647D
Text: Memory Support DS1647/DS3647, DS16777DS3677, DS161477DS36147, DS161777DS36177 Quad TRI-STATE MOS Memory I/O Registers General Description The D S 16 4 7 /D S 36 4 7 series are 4 -b it I/O b u ffe r registers intended fo r use in MOS m e m ory systems. The circu its
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DS1647/DS3647,
DS16777DS3677,
DS161477DS36147,
DS161777DS36177
DS1647/DS3647
DS3677
OS3677
DS3G77
DS1647D
DS3647D
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