Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOS TURN-OFF THYRISTOR Search Results

    MOS TURN-OFF THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS TURN-OFF THYRISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTO thyristor

    Abstract: mos Turn-off Thyristor 100a 1000v thyristor GTO thyristor 100A, 2000V 300A thyristor gate control circuit 100A gate turn-off thyristor 300a 1000v thyristor 150A 2000V GTO thyristor 100a 1000v GTO 150a gto 2000v
    Text: SDM170HK2 500A, 4500V 53mm MTOTM Thyristor Features Package 500A, 4500V Voltage Control Turn-Off Capability Low Power Gate Driver A = 75.2mm, B = 48.3mm, D = 27.2mm Symmetrical Blocking Capability Description MTOTM Thyristor is a new hybrid high power bipolar MOS turn-off thyristor. It is


    Original     		PDF SDM170HK2 Sdm170v2 MTO thyristor mos Turn-off Thyristor 100a 1000v thyristor GTO thyristor 100A, 2000V 300A thyristor gate control circuit 100A gate turn-off thyristor 300a 1000v thyristor 150A 2000V GTO thyristor 100a 1000v GTO 150a gto 2000v

    M65P100F1

    Abstract: RHRG75120 equivalent MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC


    Original     		PDF 65P10 MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC M65P100F1 RHRG75120 equivalent MCT thyristor 1000v

    "mos controlled thyristor"

    Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "mos controlled thyristor" MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v

    MCT thyristor

    Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
    Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6

    MOS Controlled Thyristor

    Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
    Text: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C


    Original     		PDF P100F MCT3D65 T3A65P100F MCTG35P60F1 O-247 -600V 150oC MOS Controlled Thyristor mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
    Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6

    "MOS Controlled Thyristors"

    Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
    Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1

    MOS Controlled Thyristor

    Abstract: MCTA75P60E1 MCTV75P60E1
    Text: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MOS Controlled Thyristor MCTA75P60E1 MCTV75P60E1

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
    Text: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"

    MCT thyristor

    Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6

    MCT thyristor

    Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
    Text: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF 3D65P1 100F2, MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MOS Controlled Thyristor MCT thyristor MCTV75P60E1 MA75P60E1

    NTE5629

    Abstract: 400v 4a thyristor thyristor TRIAC 4A, 400V triac 40a triac 4a 400v 4AMP
    Text: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed


    Original     		PDF NTE5629 400VRM, NTE5629 12VDC, 400v 4a thyristor thyristor TRIAC 4A, 400V triac 40a triac 4a 400v 4AMP

    NTE5629

    Abstract: No abstract text available
    Text: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed


    Original     		PDF NTE5629 400VRM, NTE5629 12VDC,

    triac 400v 80a

    Abstract: 80a 400v thyristor NTE5638 10A 400v triac to220
    Text: NTE5638 TRIAC – 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for


    Original     		PDF NTE5638 NTE5638 triac 400v 80a 80a 400v thyristor 10A 400v triac to220

    triac 400v 80a

    Abstract: NTE5638 triac 600V 80A Thyristor to220 NTE5638-08 80a 400v thyristor
    Text: NTE5638, NTE5638−06, NTE5638−08 TRIAC − 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void−free glass passivated chips. This device is a bi−directional triode thyristor and may be switched from off−state to conduction for


    Original     		PDF NTE5638, NTE5638-06, NTE5638-08 NTE5638 NTE5638 triac 400v 80a triac 600V 80A Thyristor to220 NTE5638-08 80a 400v thyristor

    NTE5457

    Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 SCR NTE5457 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive

    NTE5457

    Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5456 NTE5453 NTE5454 NTE5455 SCR NTE5457

    NTE5457

    Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 NTE5453 NTE5454

    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		PDF CTG35P60F1 -600V

    Untitled

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)


    OCR Scan     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218)

    measuring scr characteristics curve tracer

    Abstract: BATTERY GROUND FAULT TRACER
    Text: Microelectronics An Introduction to the ATTL758X Series of Line Card Access Switches Contents Page Introduction. 4-57 Basic Functionality Description .4-58 Switches . 4-58


    OCR Scan     		PDF ATTL758X ATTL754X ATTL7581 measuring scr characteristics curve tracer BATTERY GROUND FAULT TRACER