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    MOSFET 042N03LS Search Results

    MOSFET 042N03LS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 042N03LS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    042N03LS

    Abstract: BSC042N03LS JESD22 Mosfet 042n03ls
    Text: BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4.2 mΩ ID 93 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC042N03LS 042N03LS 042N03LS JESD22 Mosfet 042n03ls PDF

    042N03LS

    Abstract: BSC042N03LS
    Text: BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4.2 mΩ ID 93 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC042N03LS 042N03LS 042N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 4.2 mW • Optimized technology for DC/DC converters ID 93 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC042N03LS IEC61249-2-21 042N03LS PDF

    042N03LS

    Abstract: Mosfet 042n03ls BSC042N03LS 042n03l BSC042N03LS G 042n03 IEC61249-2-21 JESD22
    Text: BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 4.2 mΩ • Optimized technology for DC/DC converters ID 93 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC042N03LS IEC61249-2-21 042N03LS 042N03LS Mosfet 042n03ls 042n03l BSC042N03LS G 042n03 IEC61249-2-21 JESD22 PDF

    042N03LS

    Abstract: Mosfet 042n03ls BSC042N03LS
    Text: BSC042N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4.2 mΩ ID 93 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC042N03LS 042N03LS 042N03LS Mosfet 042n03ls PDF