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    MOSFET 1053 Search Results

    MOSFET 1053 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1053 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    jfet cascode

    Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
    Text: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the


    Original     		AN7260 jfet cascode vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching PDF

    spw -079 transformer

    Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		1-06A spw -079 transformer samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492 PDF

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram PDF

    LOGIC DUAL Regulator 5V 10V

    Abstract: MAX15024 MAX15025
    Text: 19-1053; Rev 1; 3/08 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Features The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output


    Original     		MAX15024/MAX15025 MAX15024 MAX15025 LOGIC DUAL Regulator 5V 10V PDF

    MAX15025

    Abstract: MAX15024 max15025aatb
    Text: 19-1053; Rev 2; 4/10 Single/Dual, 16ns, High Sink/Source Current Gate Drivers The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output


    Original     		MAX15024/MAX15025 MAX15024 MAX15025 MAX15024A MAX15025A/C trans/07 MAX15024A/MAX15025B/C/D MAX15024C/D, MAX15025E-H) max15025aatb PDF

    MAX15024

    Abstract: MAX15025 T1033-1 2A Source, 4A Sink Peak Drive Current
    Text: 19-1053; Rev 0; 10/07 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Features The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output


    Original     		MAX15024/MAX15025 MAX15024 MAX15025 MO229 T1433-1 T1433-2 T1033-1 2A Source, 4A Sink Peak Drive Current PDF

    MAX15024A

    Abstract: AEC-Q100 MAX15024 MAX15025
    Text: 19-1053; Rev 3; 4/11 Single/Dual, 16ns, High Sink/Source Current Gate Drivers The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output


    Original     		MAX15024/MAX15025 MAX15024 MAX15025 MAX15024A MAX15025A/C MAX15024C/D, MAX15025E-H) AEC-Q100 PDF

    MOSFET TOSHIBA 2015

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step


    Original     		2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~


    Original     		RFM12U7X 150mA, 350mA, 550mA, 750mA, 950mA, 1150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V TYP • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified


    Original     		NTY100N10 0E-03 0E-02 0E-05 0E-04 0E-01 PDF

    LTC38351

    Abstract: A915AY-3R3M LTC3835 LTC3835-1 LTC3835EDHC-1 LTC3835EGN-1 15 pin 38351
    Text: LTC3835-1 Low IQ Synchronous Step-Down Controller FEATURES DESCRIPTION n The LTC 3835-1 is a high performance step-down switching regulator controller that drives an all N-channel synchronous power MOSFET stage. A constant-frequency current mode architecture allows a phase-lockable frequency of


    Original     		LTC3835-1 650kHz. 140kHz 650kHz 12-Phase, LTC3731 12-Phase LTC3827/ LTC3827-1 38351fc LTC38351 A915AY-3R3M LTC3835 LTC3835-1 LTC3835EDHC-1 LTC3835EGN-1 15 pin 38351 PDF

    NTGS3447PT1G

    Abstract: s1053 NTGS3447
    Text: NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăBattery Switch and Load Management Applications in Portable


    Original     		NTGS3447P NTGS3447P/D NTGS3447PT1G s1053 NTGS3447 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăBattery Switch and Load Management Applications in Portable


    Original     		NTGS3447P NTGS3447P/D PDF

    ltc3845

    Abstract: MOSFET 800V 3A Rectifier t2d T2D DIODE 36V 3A diode P-Channel MOSFET 800v S 2530 A T2D DIODE 45 LTC3834-1 T2D 54 DIODE
    Text: LTC3834-1 30 A IQ Synchronous Step-Down Controller U FEATURES DESCRIPTIO • The LTC 3834-1 is a high performance step-down switching regulator controller that drives an all N-channel synchronous power MOSFET stage. A constant-frequency current mode architecture allows a phase-lockable frequency of up to 650kHz.


    Original     		LTC3834-1 650kHz. 140kHz 650kHz 16-Lead 38341f ltc3845 MOSFET 800V 3A Rectifier t2d T2D DIODE 36V 3A diode P-Channel MOSFET 800v S 2530 A T2D DIODE 45 LTC3834-1 T2D 54 DIODE PDF

    MOSFET 1053

    Abstract: input 12v output 5v application note ic 1053 4SP560M JMK212BJ475MG MAX1917 2N7002* application ddr schematic
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: DDR memory, high current, fast transient, MAX1917, quick PWM, step down controller, pulse width modulator Apr 12, 2002 APPLICATION NOTE 1053 VDDQ Supply for Server DDR Memory Using PWM Step-Down Controller


    Original     		MAX1917, MAX1917 com/an1053 MAX1917: AN1053, APP1053, Appnote1053, MOSFET 1053 input 12v output 5v application note ic 1053 4SP560M JMK212BJ475MG 2N7002* application ddr schematic PDF

    OPT05

    Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
    Text: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: [email protected]


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNI T RO D E CORP DË^|ci347,:lb3 0010S30 7 " | ~ 92° POWER MOSFET TRANSISTORS 10530 D JTX JTXVi K 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance.


    OCR Scan     		0010S30 PDF

    LKI300

    Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31
    Text: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown


    OCR Scan     		c1347c D1DS41 LKI300 ao 6786 2n6785 Unitrode 678-6 dioda s31 PDF

    power mosfet 200A

    Abstract: No abstract text available
    Text: SSF17N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA M ax. @ VOS= 600V ■


    OCR Scan     		SSF17N60A power mosfet 200A PDF

    FS50VS-3

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE j FS50VS-3 OUTLINE DRAWING Dimensions in mm - 4-5 1 j 1.3 0.5 C i X Q -Ï Q C?; A ’ ö +i c\i T" ?) (3) •4) • 10V DRIVE • VDSS .150V


    OCR Scan     		FS50VS-3 130ns O-220S FS50VS-3 PDF

    PAL 007 E MOSFET

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC1410 TC1410N 0.5A HIGH-SPEED MOSFET DRIVERS FEA TU RES G EN ER A L DESCRIPTION • The TC1410/141 ON are 0.5V CMOS buffer/drivers . They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when


    OCR Scan     		TC1410 TC1410N TC1410/141 500mA 500pF 25nsec PAL 007 E MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ1032R/X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET TrenchFE T PRODUCT SUMMARY V d s (V ) -2 0 M O SFETs 1 .5 -V R a te d Id ( n iA ) r D S (on) ( Q ) 5 @ V Gs = 4.5 V 200 7 @ VGs = 2.5 V 175 9 @ V QS = 1.8 V 150 10 d V qs = 1.5 V 50 ESD Protected


    OCR Scan     		1032R/X S-02970-- 22-Jan-01 SC-75A, SI1032R PDF

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook PDF

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z PDF