STU10NB80
Abstract: No abstract text available
Text: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STU10NB80
Max220
STU10NB80
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U10NB80
Abstract: 55AV U10NB STU10NB80
Text: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STU10NB80
Max220
U10NB80
U10NB80
55AV
U10NB
STU10NB80
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Untitled
Abstract: No abstract text available
Text: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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OCR Scan
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STU10NB80
Max220
Max220
P011R
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MOSFET 800V 10A
Abstract: mosfet 10a 800v mosfet 10a 800v high power F109 FQA10N80C
Text: QFET FQA10N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA10N80C
FQA10N80C
MOSFET 800V 10A
mosfet 10a 800v
mosfet 10a 800v high power
F109
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CMF10120D
Abstract: CMF10120 mosfet 10a 800v high power solar charge circuit max 856 mosfet 10a 800v high frequency C4D05120A
Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 24 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF10120D-Silicon
O-247-3
CMF10120D
CMF10120D
CMF10120
mosfet 10a 800v high power
solar charge circuit max 856
mosfet 10a 800v high frequency
C4D05120A
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mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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DMOSFET
Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive
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CMF10120D-Silicon
CMF10120D
O-247-3
CMF10120D
DMOSFET
CMF10120
CREE 1200V Z-Rec
electronic transformer halogen 12v
SiC POWER MOSFET
C2D10120D
3E27
ferroxcube tx
Cree SiC MOSFET
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MOSFET 800V 10A
Abstract: mosfet 10a 800v F109 FQA10N80C
Text: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA10N80C
MOSFET 800V 10A
mosfet 10a 800v
F109
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Untitled
Abstract: No abstract text available
Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM10N80
O-220
ITO-220
TSM10N80
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CMF20120D
Abstract: cmf20120
Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF20120D-Silicon
O-247-3
CMF20120D
CMF20120D
cmf20120
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA10N80C
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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cmf20120
Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF20120D-Silicon
O-247-3
CMF20120D
CMF20120D
cmf20120
mosfet 10a 800v
423F
power Diode 800V 20A
MOSFET 20a 800v
Cree SiC MOSFET
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cmf20120
Abstract: CMF20120D MOSFET 20a 800v
Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF20120D-Silicon
O-247-3
CMF20120D
CMF20120D
cmf20120
MOSFET 20a 800v
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"VDSS 800V" 40A mosfet
Abstract: No abstract text available
Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HR11CT3G
"VDSS 800V" 40A mosfet
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Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TL11CT3AG
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MOSFET 20a 800v
Abstract: MOSFET 800V 10A SHD626502 power Diode 800V 20A
Text: SENSITRON _ SEMICONDUCTOR SHD626502 DATASHEET 5343, REV - 1200V, 31A Silicon Carbide Power MOSFET Through-hole hermetic package Low Rdson over full temperature range Low switching losses Maximum Ratings PARAMETER Continuous Drain Current SYMBOL Vgs = 20V, Tc=25 C
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SHD626502
O-257
MOSFET 20a 800v
MOSFET 800V 10A
SHD626502
power Diode 800V 20A
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power Diode 800V 20A
Abstract: SHD619502 MOSFET 20a 800v MOSFET 800V 10A
Text: SENSITRON _ SEMICONDUCTOR SHD619502 DATASHEET 5342, REV - 1200V, 35A Silicon Carbide Power MOSFET Surface mount hermetic package Low Rdson over full temperature range Low switching losses Maximum Ratings PARAMETER Continuous Drain Current SYMBOL Vgs = 20V, Tc=25 C
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SHD619502
power Diode 800V 20A
SHD619502
MOSFET 20a 800v
MOSFET 800V 10A
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MOSFET 800V 10A TO-3P
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
MOSFET 800V 10A TO-3P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
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MOSFET 800V 10A TO-3P
Abstract: 10n80 mosfet 337
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1ues
QW-R502-218
MOSFET 800V 10A TO-3P
mosfet 337
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mosfet 10a 800v
Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-t
QW-R502-218
mosfet 10a 800v
MOSFET 800V 10A TO-3P
MOSFET 800V 10A
10N80L
mosfet 10a 800v high power
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N8at
QW-R502-218
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