Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 1200V 30A SMPS Search Results

    MOSFET 1200V 30A SMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1200V 30A SMPS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smps with uc3842 and tl431

    Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
    Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES


    Original     		BF3510TV /BF3506TV BHA/K3012TV BTAxx600CW AVS08 L6560/A L6561 L4981A/B ST90T40 /W/P/HxxNB50/60/80 smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output PDF

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S 18A, 1200V, STEALTH Diode Features • Stealth Recovery trr = 300 ns @ IF = 18 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant


    Original     		ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S ISL9R18120S3S O247-002. PDF

    MOSFET 1200v 30a

    Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C
    Text: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:


    Original     		FO-011 1-800-4-HARRIS MOSFET 1200v 30a Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical


    Original     		ISL9R30120G2 ISL9R30120G2 120lopment. PDF

    MOSFET 1200v 30a snubber circuit

    Abstract: MOSFET 1200v 30a r30120g2 AN-7528 R30120G ISL9R30120G2 smart ups 750 circuit
    Text: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical


    Original     		ISL9R30120G2 ISL9R30120G2 MOSFET 1200v 30a snubber circuit MOSFET 1200v 30a r30120g2 AN-7528 R30120G smart ups 750 circuit PDF

    K30120G3

    Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
    Text: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current


    Original     		ISL9K30120G3 ISL9K30120G3 K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps PDF

    r18120g2

    Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
    Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family


    Original     		ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S ISL9R18120G2, ISL9R18120S3S r18120g2 R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120S3ST PDF

    Quasi-resonant Converter for induction cooker

    Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
    Text: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC


    Original     		4kW/100V FIN1025/FIN1026 Power247TM, Quasi-resonant Converter for induction cooker 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS PDF

    K18120G3

    Abstract: ISL9K18120G3 AN-7528 TA49414 K1812
    Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current


    Original     		ISL9K18120G3 ISL9K18120G3 K18120G3 AN-7528 TA49414 K1812 PDF

    r18120g2

    Abstract: R18120P2 AN-7528 TA49414 MOSFET 1200v 30a ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S R18120S3
    Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family


    Original     		ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S ISL9R18120G2, ISL9R18120S3S r18120g2 R18120P2 AN-7528 TA49414 MOSFET 1200v 30a R18120S3 PDF

    K18120G3

    Abstract: No abstract text available
    Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current


    Original     		ISL9K18120G3 ISL9K18120G3 K18120G3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family


    Original     		ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S ISL9R18120G2, ISL9R18120S3S PDF

    MOSFET 1200v 30a snubber circuit

    Abstract: R18120P2 AN-7528 ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S r18120g2 igbt 6.5 kv snubber
    Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family


    Original     		ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S ISL9R18120G2, ISL9R18120S3S MOSFET 1200v 30a snubber circuit R18120P2 AN-7528 r18120g2 igbt 6.5 kv snubber PDF

    LCD TV SMPS circuit

    Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
    Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient


    Original     		O-263 FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P FDS6572A/FDS6574A Power247TM, LCD TV SMPS circuit MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50 PDF

    MOSFET 1200v 30a

    Abstract: DIODE w2x MOSFET 1200v 30a snubber circuit STTB6006TV2
    Text: f Z J SGS-THOMSON ^7# [ « [ im iO T ® « ! STTB6006T V 1/2 TURBOSWITCH “B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 2*30A V rrm 600V trr (typ) 60ns V f (max) 23 SB K2 A2 K1 A1 STTB6006T(V)1 1.3V A2 K1 K2 A1 STTB6006T(V)2


    OCR Scan     		STTB6006T 7121S37 MOSFET 1200v 30a DIODE w2x MOSFET 1200v 30a snubber circuit STTB6006TV2 PDF

    STTB3006P

    Abstract: mosfet 1200V 30a smps
    Text: T S G S -T H O M S O N ^ 7 # M C ^ < m iO T s M K fZ S T T B 3 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V tr r Vf PRELIMINARY DATA FEATURES AND BENEFITS


    OCR Scan     		PDF

    STTB3006P

    Abstract: 3006P MOSFET 1200v 30a STTB3006PI MOSFET 1200v 30a snubber circuit
    Text: STTB3006P I  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 30A VRRM 600V trr (typ) 60ns VF (max) 1.3V K A IF(AV) FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization


    Original     		STTB3006P STTB3006P STTB3006PI 3006P MOSFET 1200v 30a STTB3006PI MOSFET 1200v 30a snubber circuit PDF

    diode sg 42

    Abstract: No abstract text available
    Text: £ ÿ j SGS-THOMSON DœSELIOTfô ! STTB3006P I TURBOSWITCH ™ ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­


    OCR Scan     		STTB3006P diode sg 42 PDF

    Untitled

    Abstract: No abstract text available
    Text: r Z J SGS-THOMSON ^ 7 # S f f lD e ^ O I L ie ir iO f f le i S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*30A Vrrm 600V * t (typ) 60ns Vf (max) 1.3V PRELIMINARY DATA 53 BE K1 A1


    OCR Scan     		STTB6006TV1 STTB6006TV2 D073b4fl PDF

    STTB6006TV1

    Abstract: STTB6006TV2 MOSFET 1200v 30a snubber circuit MOSFET 1200v 30a TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE smps high power
    Text: STTB6006TV1/2  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF AV 2*30A VRRM 600V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTB6006TV1 1.3V A2 K1 K2 A1 STTB6006TV2 FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization


    Original     		STTB6006TV1/2 STTB6006TV1 STTB6006TV2 STTB6006TV1 STTB6006TV2 MOSFET 1200v 30a snubber circuit MOSFET 1200v 30a TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE smps high power PDF

    Untitled

    Abstract: No abstract text available
    Text: rz 7 Ä 7# SGS-THOMSON M ûœ ËŒ O T «® S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V trr PRELIMINARY DATA 60ns (typ) 1.3V Vf (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: £ y j SGS-THOMSON ne^OHLieiTIMeQilBCi S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPEC IFIC TO THE FOLLOWING OPERA­


    OCR Scan     		PDF

    IGBT 500V 35A

    Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure
    Text: Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing Features Application Tips Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 29 November 2004 TECHNOLOGY TO THE NEXT POWER 1 What is an IGBT?


    Original     		APT0408 IGBT 500V 35A 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure PDF