r18120g2
Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family
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ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
ISL9R18120G2,
ISL9R18120S3S
r18120g2
R18120S3
R18120P
R18120P2
igbt 6.5 kv snubber
R18120G
ISL9R18120S3ST
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Untitled
Abstract: No abstract text available
Text: ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S 18A, 1200V, STEALTH Diode Features • Stealth Recovery trr = 300 ns @ IF = 18 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant
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ISL9R18120G2,
ISL9R18120P2,
ISL9R18120S3S
ISL9R18120S3S
O247-002.
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Untitled
Abstract: No abstract text available
Text: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical
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ISL9R30120G2
ISL9R30120G2
120lopment.
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MOSFET 1200v 30a snubber circuit
Abstract: MOSFET 1200v 30a r30120g2 AN-7528 R30120G ISL9R30120G2 smart ups 750 circuit
Text: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical
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ISL9R30120G2
ISL9R30120G2
MOSFET 1200v 30a snubber circuit
MOSFET 1200v 30a
r30120g2
AN-7528
R30120G
smart ups 750 circuit
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K30120G3
Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
Text: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K30120G3
ISL9K30120G3
K30120G3
smart ups 750 circuit
MOSFET 1200v 30a
K30120G
AN-7528
IGBT 500A 1200V
mosfet 1200V 30a smps
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K18120G3
Abstract: ISL9K18120G3 AN-7528 TA49414 K1812
Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K18120G3
ISL9K18120G3
K18120G3
AN-7528
TA49414
K1812
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r18120g2
Abstract: R18120P2 AN-7528 TA49414 MOSFET 1200v 30a ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S R18120S3
Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family
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ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
ISL9R18120G2,
ISL9R18120S3S
r18120g2
R18120P2
AN-7528
TA49414
MOSFET 1200v 30a
R18120S3
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K18120G3
Abstract: No abstract text available
Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K18120G3
ISL9K18120G3
K18120G3
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MOSFET 1200v 30a snubber circuit
Abstract: R18120P2 AN-7528 ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S r18120g2 igbt 6.5 kv snubber
Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family
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ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
ISL9R18120G2,
ISL9R18120S3S
MOSFET 1200v 30a snubber circuit
R18120P2
AN-7528
r18120g2
igbt 6.5 kv snubber
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Untitled
Abstract: No abstract text available
Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family
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ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
ISL9R18120G2,
ISL9R18120S3S
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Quasi-resonant Converter for induction cooker
Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
Text: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC
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4kW/100V
FIN1025/FIN1026
Power247TM,
Quasi-resonant Converter for induction cooker
1kw single phase IGBT inverter IC Module
inverter Controller PWM 1kw
igbt induction cooker
induction heating cooker
motor driver full bridge mosfet 10A 100V
induction cooker
universal AC Motor soft start
induction heating
230V pwm inverter single phase UPS
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transistor D 5032
Abstract: 650 DIODE IRGPS60B120KD
Text: PD- 94239 IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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IRGPS60B120KD
Super-247
Super-247TM
O-274AA
transistor D 5032
650 DIODE
IRGPS60B120KD
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ic MARKING QG
Abstract: IGBT 1200V 60A IGBT 60A Super-247 Package IRFPS37N50A IRGPS60B120KD transistor D 5032 247t A1508 650 DIODE
Text: PD- 94239A IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4239A
IRGPS60B120KD
Super-247
Super-247TM
IRFPS37N50A
ic MARKING QG
IGBT 1200V 60A
IGBT 60A
Super-247 Package
IRFPS37N50A
IRGPS60B120KD
transistor D 5032
247t
A1508
650 DIODE
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STTB3006P
Abstract: 3006P MOSFET 1200v 30a STTB3006PI MOSFET 1200v 30a snubber circuit
Text: STTB3006P I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 30A VRRM 600V trr (typ) 60ns VF (max) 1.3V K A IF(AV) FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization
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STTB3006P
STTB3006P
STTB3006PI
3006P
MOSFET 1200v 30a
STTB3006PI
MOSFET 1200v 30a snubber circuit
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Solid State Relays
Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
Text: HEATSINK DIMENSIONS WG - K3/160 Screw thread M4 x 6mm 0.16x0.24 / 10 pieces WG - K1/100 B/D Snap-on-rail 35 (1.38) 100 (3.94) B B A A B Snap-on-rail 35 (1.38) B 160 (6.3) A 20 (0.79) D C 3.0 (0.12) Snap-on-rail mounting Snap-on-rail mounting 1.5 (0.06) Counterbore for grounding
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K3/160
K2/100
Solid State Relays
gunther relay. 3700
WG A8 6D 03 Z
TRIAC 20A 600V
WG A5 6D 25
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95A sensor hall
Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.
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IPM module
Abstract: pm10csj060 igbt short circuit protection schematic diagram pwm INVERTER 3 phase 600V IGBT Current Sensing Channel Driver PM150CVA050 3 phase 300A inverter schematic diagram PM25RSK120 PM400DVA060 MOSFET 1200v 30a snubber circuit
Text: New Intelligent Power Modules IPMs for Motor Drive Applications Eric R. Motto Powerex Incorporated, Hillis Street, Youngwood, PA 15697 USA Abstract - Two new families of intelligent power devices have been developed to address industry requirements for high reliability, low cost, motor controls with increased performance and smaller size. These new devices are the
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Untitled
Abstract: No abstract text available
Text: fiZ T SGS-THOMSON ^7# MDe^OILIigTriOKineS STTB3006P I TURBOSWITCH ”B". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 30A V rrm 600V trr (typ) 60ns Vf PRELIMINARY DATA 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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STTB3006P
STTB3006P
STTB3006PI
2500Vrms
DD73bM3
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MOSFET 1200v 30a
Abstract: DIODE w2x MOSFET 1200v 30a snubber circuit STTB6006TV2
Text: f Z J SGS-THOMSON ^7# [ « [ im iO T ® « ! STTB6006T V 1/2 TURBOSWITCH “B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 2*30A V rrm 600V trr (typ) 60ns V f (max) 23 SB K2 A2 K1 A1 STTB6006T(V)1 1.3V A2 K1 K2 A1 STTB6006T(V)2
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STTB6006T
7121S37
MOSFET 1200v 30a
DIODE w2x
MOSFET 1200v 30a snubber circuit
STTB6006TV2
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diode sg 42
Abstract: No abstract text available
Text: £ ÿ j SGS-THOMSON DœSELIOTfô ! STTB3006P I TURBOSWITCH ™ ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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STTB3006P
diode sg 42
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON ^ 7 # S f f lD e ^ O I L ie ir iO f f le i S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*30A Vrrm 600V * t (typ) 60ns Vf (max) 1.3V PRELIMINARY DATA 53 BE K1 A1
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STTB6006TV1
STTB6006TV2
D073b4fl
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Untitled
Abstract: No abstract text available
Text: rz 7 Ä 7# SGS-THOMSON M ûœ ËŒ O T «® S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V trr PRELIMINARY DATA 60ns (typ) 1.3V Vf (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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Untitled
Abstract: No abstract text available
Text: £ y j SGS-THOMSON ne^OHLieiTIMeQilBCi S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPEC IFIC TO THE FOLLOWING OPERA
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STTB3006P
Abstract: mosfet 1200V 30a smps
Text: T S G S -T H O M S O N ^ 7 # M C ^ < m iO T s M K fZ S T T B 3 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V tr r Vf PRELIMINARY DATA FEATURES AND BENEFITS
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