MOSFET
Abstract: 2N6784
Text: ne>. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6784 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for
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2N6784
2N6784
O-205AF
00A/jis
MOSFET
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TSSOP28P
Abstract: 32-DQ
Text: Temic SÌ6332DQ Semiconductors Triple P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 I d (A) ±4.5 ±3.4 rDS(on) (^ ) 0.040 @ VGs = -10 V 0.070 @ VGS = -4.5 V p o '« 6 TSSOP-28 ne "Source Pins 2, 3, 25, 26, and 27 must be tied common. Source Pins 7, 8, 20, 21, and
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6332DQ
TSSOP-28
S-47962--Rev.
22-Jul-96
TSSOP-8/-28
22-M-96
TSSOP28P
32-DQ
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k408
Abstract: No abstract text available
Text: _ SÌ6562DQ Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET lü U U im M y K V o s *vj N -Ch an n el R D8(ON> P I Id (A) 0.030 @ V GS = 4.5 V ± 4.5 0.040 V GS = 2.5 V ± 3.9 20 P-C ha n ne i 0.050 @ V Gs = -4 .5 V ± 3.5
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6562DQ
6562DQ_
S-56944--
23-Nov-98
k408
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-13_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-13
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-18_EN OCT 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.8 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-18
DW01M
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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MOSFET 25 NE 50
Abstract: MOSFET 25 NE 50 Z MOSFET 20 NE 50 Z MOSFET 20 NE 50
Text: DW01M-DS-14_EN MAY 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.4 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-14
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
MOSFET 25 NE 50
MOSFET 25 NE 50 Z
MOSFET 20 NE 50 Z
MOSFET 20 NE 50
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-15_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-15
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-12_EN DEC 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-12
DW01M
OT-23-6)
DW01Mx-T1
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Untitled
Abstract: No abstract text available
Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8855-DS-26
FS8855
500mAï
700mV
850mV
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Untitled
Abstract: No abstract text available
Text: DW01B-DS-12_EN JUN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01B One Cell Lithium-ion/Polymer Battery Protection IC DW01B FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01B-DS-12
DW01B
OT-23-6)
700REF
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Untitled
Abstract: No abstract text available
Text: DW01C-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet DW01C One Cell Lithium-ion/Polymer Battery Protection IC DW01C FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01C-DS-11
DW01C
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dw01 sot-23-6
Abstract: DW01B
Text: DW01B-DS-13_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01B One Cell Lithium-ion/Polymer Battery Protection IC DW01B FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01B-DS-13
DW01B
OT-23-6)
dw01 sot-23-6
DW01B
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-10_EN SEP 2010 FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y REV. 1.0 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-10
DW01M
OT-23-6)
700REF
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Untitled
Abstract: No abstract text available
Text: FS8820P-DS-15_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet FS8820P One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8820P FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8820P-DS-15
FS8820P
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DW01HA-x
Abstract: DW01HA-DS-13_EN
Text: DW01HA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01HA-DS-13
DW01HA
OT-23-6)
OT-23-6
DW01HA-x
DW01HA-DS-13_EN
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FAP-450
Abstract: diode sy 170/20
Text: FUJI FAP-450 N-channel MOS-FET 500V 0,38i2 1 4 A 1 9 0 W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V Gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5
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FAP-450
00Gb3b2
FAP-450
RG-50
diode sy 170/20
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DW01-G
Abstract: DW01X-DS-15_EN DW01E-G dw01a-g DW01B dw01 sot-23-6
Text: DW01x-DS-15_EN AUG 2012 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 5 Datasheet DW01x One Cell Lithium-ion/Polymer Battery Protection IC DW01x FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01x-DS-15
DW01x
DW01A,
DW01C
DW01D-G
DW01E-G
DW01-P
DW01-P
DW01-G
DW01X-DS-15_EN
dw01a-g
DW01B
dw01 sot-23-6
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FS8601RA-D
Abstract: FS8601RA-DS-13_EN
Text: FS8601RA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS8601RA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601RA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8601RA-DS-13
FS8601RA
FS8601RA-D
FS8601RA-DS-13_EN
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Untitled
Abstract: No abstract text available
Text: FS8601RA-DS-12_EN SEP 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.2 Datasheet FS8601RA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601RA FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8601RA-DS-12
FS8601RA
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Untitled
Abstract: No abstract text available
Text: FS8820P-DS-17_EN JUN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.7 Datasheet FS8820P One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8820P FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8820P-DS-17
FS8820P
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Untitled
Abstract: No abstract text available
Text: FS326E+G-DS-11_EN JUN 2009 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS326E+G One Cell Lithium-ion/Polymer Battery Protection IC FS326E+G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS326E
G-DS-11
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Untitled
Abstract: No abstract text available
Text: FS312F-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS312F-G One Cell Lithium-ion/Polymer Battery Protection IC FS312F-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS312F-G-DS-11
FS312F-G
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Untitled
Abstract: No abstract text available
Text: DW01-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet DW01-G One Cell Lithium-ion/Polymer Battery Protection IC DW01-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01-G-DS-11
DW01-G
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Untitled
Abstract: No abstract text available
Text: SiC783ACD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC783A is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density
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SiC783ACD
SiC783A
MLP66-40L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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