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    MOSFET 20020 Search Results

    MOSFET 20020 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 20020 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DC mosfet replacement code

    Abstract: 4 change over relays solid state relay 10A DC teledyne relays Circuit Diagram for 5vdc Relay Control Module 400400
    Text: TELEDYNE RELAYS MOSD Series Industrial Solid State Products SINGLE MOSFET DC OUTPUT TO 80 AMPS 400 VOLTS PART NUMBERS Package & Chip Type Max Blocking Input Voltage piv / Type Line Rating MOSD -MOSFET 5050 100100 200200 400400 Output Current Amps R-DC Input


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    MOSD5050R50-H-012 500Vdc) DC mosfet replacement code 4 change over relays solid state relay 10A DC teledyne relays Circuit Diagram for 5vdc Relay Control Module 400400 PDF

    BGA 20x20

    Abstract: FDZ203
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


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    FDZ203N FDZ203N BGA 20x20 FDZ203 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5G02TU Silicon P Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET


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    SSM5G02TU PDF

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    Abstract: No abstract text available
    Text: SSM5H01TU Silicon N Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit: mm • Combined Nch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET


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    SSM5H01TU PDF

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    Abstract: No abstract text available
    Text: SSM5G04TU Silicon P Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET


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    SSM5G04TU PDF

    24V 10A SMPS

    Abstract: IRFP3703
    Text: 2002-03-28 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-168-74 IRFP3703 HEXFET TO-247 PD - 93917 IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification


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    IRFP3703 O-247 IRFP3703 O-247AC Dissipatio252-7105 24V 10A SMPS PDF

    AN-994

    Abstract: IRF3706 IRF3706L IRF3706S
    Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-146-55 IRF3706 HEXFET TO-220 PD - 93936A IRF3706 IRF3706S IRF3706L SMPS MOSFET HEXFET Power MOSFET Applications


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    IRF3706 O-220 3936A IRF3706 IRF3706S IRF3706L O-220AB O-262 AN-994 IRF3706L IRF3706S PDF

    IRF7456

    Abstract: No abstract text available
    Text: 2002-02-27 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-159-83 IRF7456 HEXFET SO-8 PD- 93840B IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters


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    IRF7456 93840B IRF7456 PDF

    AN1001

    Abstract: EIA-541 IRF7452 MS-012AA
    Text: 2002-02-27 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-159-67 IRF7452 HEXFET SO-8 PD- 93897C IRF7452 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters


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    IRF7452 93897C IRF7452 AN1001) AN1001 EIA-541 MS-012AA PDF

    MO-220

    Abstract: PIP201-12M origin diode sp
    Text: PIP201-12M DC to DC converter powertrain Rev. 02 — 18 July 2002 Product data M3D797 1. Description The PIP201-12M is designed for use as the power output stage of a synchronous buck DC to DC converter. It contains a MOSFET control IC and two power MOSFET


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    PIP201-12M M3D797 PIP201-12M MO-220 origin diode sp PDF

    origin diode sp

    Abstract: PHILIPS MOSFET MARKING MO-220 PIP202-12M PIP202-12M-2
    Text: PIP202-12M-2 DC-to-DC converter powertrain Rev. 02 — 24 November 2003 Product data M3D797 1. Description The PIP202-12M is designed for use as the power output stage of a synchronous buck DC-to-DC converter. It contains a MOSFET control IC, two power MOSFET


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    PIP202-12M-2 M3D797 PIP202-12M origin diode sp PHILIPS MOSFET MARKING MO-220 PIP202-12M-2 PDF

    PIP201-12M

    Abstract: hazel grove marking code PAD1 SMD
    Text: PIP201-12M DC to DC converter powertrain Rev. 01 — 24 January 2002 Preliminary data M3D797 1. Description The PIP201-12M is designed for use as the power output stage of a synchronous buck DC to DC converter. It contains a MOSFET control IC and two power MOSFET


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    PIP201-12M M3D797 PIP201-12M hazel grove marking code PAD1 SMD PDF

    PDDO

    Abstract: PIP201-12M-3 MO-220 PIP201-12M MLF68
    Text: PIP201-12M-3 DC-to-DC converter powertrain Rev. 03 — 19 November 2003 M3D797 Product data 1. Description The PIP201-12M is designed for use as the power output stage of a synchronous buck DC-to-DC converter. It contains a MOSFET control IC and two power MOSFET


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    PIP201-12M-3 M3D797 PIP201-12M PDDO PIP201-12M-3 MO-220 MLF68 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the


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    LM9061 5-Aug-2002] PDF

    200V 200A mosfet

    Abstract: 400400
    Text: ^ T E L E D Y N E RELAYS MOSD Series Industrial Solid State Products SINGLE MOSFET DC OUTPUT TO 200 AMPS 400 VOLTS PART NUM BERS Package & Chip Type Max Blocking Voltage piv / Line Rating Input Type M O SD SOSO R-DC Input -MOSFET 1 Ö 8 1 ÖÖ Random SS Below and


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    PDF

    philips capacitor 1000uf 25V

    Abstract: PHILIPS MOSFET MARKING MO-220 PIP202-12M
    Text: PIP202-12M DC to DC converter powertrain Rev. 01 — 15 July 2002 Product data M3D797 1. Description The PIP202-12M is designed for use as the power output stage of a synchronous buck DC to DC converter. It contains a MOSFET control IC, two power MOSFET transistors and a Schottky diode. By combining the power MOSFETs and the driver


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    PIP202-12M M3D797 PIP202-12M philips capacitor 1000uf 25V PHILIPS MOSFET MARKING MO-220 PDF

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    Abstract: No abstract text available
    Text: ^ T E L E D Y N E RELAYS LitiAOSD S e rie s Industrial Solid State Products SINGLE MOSFET DC OUTPUT TO 25 AMPS 200 VOLTS PART NUM BERS Package & Chip Type Max Blocking Voltage piv / Line Rating Input Type LR M O SD SOSO -M O SFET 1ÖÖ1ÖÖ Random 200200


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    Untitled

    Abstract: No abstract text available
    Text: FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB11N40 FQI11N40 FQI11N40TU O-262 PDF

    fqb*12n20l

    Abstract: No abstract text available
    Text: FQB12N20L / FQI12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB12N20L FQI12N20L FQI12N20LTU O-262 fqb*12n20l PDF

    TLP176GA

    Abstract: 11-5H1
    Text: TLP176GA TOSHIBA Photocoupler Photorelay TLP176GA PBX Telecommunication Modem・FAX Cards, Modems In PC Measurement Instrumentation Unit: mm The TOSHIBA TLP176GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP,


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    TLP176GA TLP176GA 54SOP4) 11-5H1 PDF

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    Abstract: No abstract text available
    Text: QFET TM FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB13N10 FQI13N10 FQI13N10TU O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP172G TOSHIBA Photocoupler Photorelay TLP172G Modem•Fax Cards, Modems in PC Telecommunications PBX Measurement Equipment Unit: mm The Toshiba TLP172G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP,


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    TLP172G TLP172G 54SOP4) PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP197GA TOSHIBA Photocoupler Photorelay TLP197GA PBX Telecommunication Modem・FAX Cards, Modems In PC Measurement Instrumentation Unit: mm The TOSHIBA TLP197GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP,


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    TLP197GA TLP197GA 54SOP6) 11-7C1 PDF

    TLP176GA

    Abstract: No abstract text available
    Text: TLP176GA TOSHIBA Photocoupler Photorelay TLP176GA PBX Telecommunication Modem・FAX Cards, Modems In PC Measurement Instrumentation Unit: mm The TOSHIBA TLP176GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP,


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    TLP176GA TLP176GA 54SOP4) PDF