Untitled
Abstract: No abstract text available
Text: DW01M-DS-13_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-13
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-18_EN OCT 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.8 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-18
DW01M
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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MOSFET 25 NE 50
Abstract: MOSFET 25 NE 50 Z MOSFET 20 NE 50 Z MOSFET 20 NE 50
Text: DW01M-DS-14_EN MAY 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.4 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-14
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
MOSFET 25 NE 50
MOSFET 25 NE 50 Z
MOSFET 20 NE 50 Z
MOSFET 20 NE 50
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-15_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-15
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-12_EN DEC 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-12
DW01M
OT-23-6)
DW01Mx-T1
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DW01HA-D
Abstract: No abstract text available
Text: DW01HA-DS-12_EN SEP 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01HA-DS-12
DW01HA
OT-23-6)
OT-23-6
DW01HA-D
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DW01HA-x
Abstract: DW01HA-DS-13_EN
Text: DW01HA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01HA-DS-13
DW01HA
OT-23-6)
OT-23-6
DW01HA-x
DW01HA-DS-13_EN
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FS8601HX-DS-13_EN
Abstract: No abstract text available
Text: FS8601Hx-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS8601Hx One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601Hx FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8601Hx-DS-13
FS8601Hx
FS8601HX-DS-13_EN
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Untitled
Abstract: No abstract text available
Text: FS8820P-DS-11_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS8820P One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8820P FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8820P-DS-11
FS8820P
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Untitled
Abstract: No abstract text available
Text: FS8820P-DS-15_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet FS8820P One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8820P FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8820P-DS-15
FS8820P
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-10_EN SEP 2010 FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y REV. 1.0 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-10
DW01M
OT-23-6)
700REF
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Untitled
Abstract: No abstract text available
Text: FS8601Hx-DS-12_EN SEP 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.2 Datasheet FS8601Hx One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601Hx FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8601Hx-DS-12
FS8601Hx
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dw01 sot-23-6
Abstract: No abstract text available
Text: DW01H-DS-10_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.0 Datasheet DW01H One Cell Lithium-ion/Polymer Battery Protection IC DW01H FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01H-DS-10
DW01H
700REF
dw01 sot-23-6
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Untitled
Abstract: No abstract text available
Text: FS326E+G-DS-11_EN JUN 2009 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS326E+G One Cell Lithium-ion/Polymer Battery Protection IC FS326E+G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS326E
G-DS-11
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Untitled
Abstract: No abstract text available
Text: DW01-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet DW01-G One Cell Lithium-ion/Polymer Battery Protection IC DW01-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01-G-DS-11
DW01-G
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DW01H-G
Abstract: DW01H-DS-11_EN
Text: DW01H-DS-11_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet DW01H One Cell Lithium-ion/Polymer Battery Protection IC DW01H FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01H-DS-11
DW01H
700REF
DW01H-G
DW01H-DS-11_EN
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Untitled
Abstract: No abstract text available
Text: DW01A-DS-11_EN JUN 2010 FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y REV. 1.1 Datasheet DW01A One Cell Lithium-ion/Polymer Battery Protection IC DW01A FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01A-DS-11
DW01A
700REF
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FS8601RA-D
Abstract: FS8601RA-DS-13_EN
Text: FS8601RA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS8601RA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601RA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8601RA-DS-13
FS8601RA
FS8601RA-D
FS8601RA-DS-13_EN
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Untitled
Abstract: No abstract text available
Text: FS8601RA-DS-12_EN SEP 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.2 Datasheet FS8601RA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601RA FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS8601RA-DS-12
FS8601RA
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Untitled
Abstract: No abstract text available
Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8855-DS-26
FS8855
500mAï
700mV
850mV
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Untitled
Abstract: No abstract text available
Text: DW01A-DS-13_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01A One Cell Lithium-ion/Polymer Battery Protection IC DW01A FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01A-DS-13
DW01A
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mosfet specification
Abstract: MST02 f425 2SK1503-01
Text: Fuji power MOSFET S p e c ific a tio n O . Scope This s p e c ifie s Fuji power MOSFET 1 2 S K 15 0 3 - 0 1 — .J 2 . Out 1i ne I Construction li ) Appi ica ti on UI ) Outview 3. Absolute aaxinu« ratings at Tc=25 *C Description This material and the information herein is the property of
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MK5C27595)
MT5F4259
2SK1503-01
T0-220AB
I992-0Z-2]
T0220.
2SKI503-0IE
MK5G275
mosfet specification
MST02
f425
2SK1503-01
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TSSOP28P
Abstract: 32-DQ
Text: Temic SÌ6332DQ Semiconductors Triple P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 I d (A) ±4.5 ±3.4 rDS(on) (^ ) 0.040 @ VGs = -10 V 0.070 @ VGS = -4.5 V p o '« 6 TSSOP-28 ne "Source Pins 2, 3, 25, 26, and 27 must be tied common. Source Pins 7, 8, 20, 21, and
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6332DQ
TSSOP-28
S-47962--Rev.
22-Jul-96
TSSOP-8/-28
22-M-96
TSSOP28P
32-DQ
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FAP-450
Abstract: diode sy 170/20
Text: FUJI FAP-450 N-channel MOS-FET 500V 0,38i2 1 4 A 1 9 0 W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V Gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5
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FAP-450
00Gb3b2
FAP-450
RG-50
diode sy 170/20
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