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    MOSFET 2N65 Search Results

    MOSFET 2N65 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2N65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    QW-R502-370 PDF

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65K 2N65K 2N65KL-TF2-T 2N65KG-TF2-Tat QW-R502-932 PDF

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged


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    2N65L 2N65L QW-R502-580 PDF

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    QW-R502-370 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65K 2N65K QW-R502-932, PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65ZL Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65ZL is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65ZL 2N65ZL QW-R502-931, PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65K 2N65K QW-R502-932 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-370 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65K-MT 2N65K-MT 2N65KL-TA3-T 2N65KG-TA3-T QW-R502-B04 PDF

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K-TA Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION` The UTC 2N65K-TA is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65K-TA 2N65K-TA QW-R205-041 PDF

    580A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged


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    2N65L O-220 2N65L O-220F O-220F1 QW-R502-580 580A PDF

    2n65 MOSFEt

    Abstract: 2N65 mosfet 2n65 2N65G-TM3-T 2N65G-TA3-T QW-R502-370 2N65L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-370 2n65 MOSFEt 2N65 mosfet 2n65 2N65G-TM3-T 2N65G-TA3-T 2N65L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65K-MT 2N65K-MT QW-R502-B04 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65-C Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N65-C 2N65-C QW-R502-B35 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-370 PDF

    2n65 MOSFEt

    Abstract: 2N65 power mosfet 2N65 2N65L 2N65G-TM3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-370 2n65 MOSFEt 2N65 power mosfet 2N65 2N65L 2N65G-TM3-T PDF

    2N65

    Abstract: 2N65 power mosfet 2n65 MOSFEt 25V 1A power MOSFET TO-220 mosfet 2n65 2N65L power mosfet 200A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-370 2N65 2N65 power mosfet 2n65 MOSFEt 25V 1A power MOSFET TO-220 mosfet 2n65 2N65L power mosfet 200A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65Z Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 1 „ DESCRIPTION TO-251 The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N65Z O-251 2N65Z O-252 O-220F1 O-220F QW-R502-825 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)


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    O-220F O-220F1 O-262 O-251 O-220 QW-R502-370 PDF

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


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    IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65L Preliminary 2A, 650V N-CHANNEL POWER MOSFET „ 1 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5.0Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


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    2N65L O-220 2N65L O-220F O-220F1 QW-R502-580 PDF

    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


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    MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC1696 Overvoltage Protection Controller FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO ±2% Overvoltage Threshold Accuracy Low Profile 1mm ThinSOTTM Package Gate Drive for SCR Crowbar or External N-Channel Disconnect MOSFET Monitors Two Output Voltages


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    LTC1696 dis1735 LTC1922-1 LTC1960 36-Pin 1696f PDF

    Irf640 irf9540

    Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF


    OCR Scan
    2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF PDF