2SK3502-01
Abstract: No abstract text available
Text: DATE CHECKED Apr.-02-'01 Device Name : Type Name : Spec. No. : Date : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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2SK3502-01MR
H04-004-05
2SK3502-01MR
O-220F
1x10-5
1x10-4
MS5F4981
H04-004-03
1x10-5
2SK3502-01
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Untitled
Abstract: No abstract text available
Text: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel
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SCT2120AF
O220AB
R1102A
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mosfet 300V 10A
Abstract: 300v 10 amp n-channel mosfet
Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 20 Amp, 0.35 Ohm MOSFET Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT
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SHD225608
250mA
SHD225608
O-254
mosfet 300V 10A
300v 10 amp n-channel mosfet
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mosfet 300v 10a
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 0.35 Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package Electrically equivalent to IXTM20N60 MAXIMUM RATINGS
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SHD239607
IXTM20N60
VGS631)
SHD239607
mosfet 300v 10a
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mos fet 120v 10A
Abstract: No abstract text available
Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3513-01L
mos fet 120v 10A
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SMK1060
Abstract: No abstract text available
Text: SMK1060D2 Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code
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SMK1060D2
SMK1060
KSD-T6S005-001
SMK1060
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SMK1060
Abstract: No abstract text available
Text: SMK1060P Semiconductor Advanced N-Ch Power MOSFET Features PIN Connection • High Voltage: BVDSS=600V Min. • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k in g
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SMK1060P
SMK1060
O-220AB-3L
KSD-T0P023-000
SMK1060
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Untitled
Abstract: No abstract text available
Text: SMK1060FJ Advanced N-Ch Power MOSFET Features • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code
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SMK1060FJ
SMK1060
O-220F-3L
SDB20D45
KSD-T0O069-000
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SMK1060F
Abstract: SMK1060
Text: SMK1060F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75Ω(Max.) Ordering Information Type NO.
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SMK1060F
SMK1060
O-220F-3L
KSD-T0O030-000
SMK1060F
SMK1060
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SMK1060
Abstract: No abstract text available
Text: SMK1060F Advanced N-Ch Power MOSFET Features • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code
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SMK1060F
SMK1060
O-220F-3L
SDB20D45
KSD-T0O030-003
SMK1060
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Untitled
Abstract: No abstract text available
Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3513-01L
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IXTM20N60
Abstract: SHD239607 mosfet 300V 10A type
Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS
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SHD239607
IXTM20N60
IXTM20N60
SHD239607
mosfet 300V 10A type
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R6020ANZ
Abstract: R6020
Text: R6020ANZ Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Silicon N-channel MOSFET Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.
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R6020ANZ
R6020ANZ
R1120A
R6020
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R6020FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage
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R6020FNX
O-220FM
R6020FNX
R1120A
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 0.35 Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package Electrically equivalent to IXTM20N60 MAXIMUM RATINGS
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SHD239607
IXTM20N60
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6010ANX
O-220FM
R6010ANX
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6010ANX
O-220FM
R6010ANX
R1120A
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Untitled
Abstract: No abstract text available
Text: R6020FNX Data Sheet 10V Drive Nch MOSFET R6020FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.
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R6020FNX
O-220FM
R6020FNX
R1120A
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Untitled
Abstract: No abstract text available
Text: R6010ANX Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6010ANX
O-220FM
R6010ANX
R1120A
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2SK1810
Abstract: 2sk18
Text: LVXS'U—X yt*7—MOSFET LVX SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK1810 F10V30 300V 10a • Æ fê S ï R A T IN G S A bsolute M axim u m R atings m Item s is S torag e Tem perature ■f-v Channel Tem perature • v —x £ Drain • Source V o lta ge
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2SK1810
F10V30)
2SK1810
2sk18
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FM15TF-9
Abstract: JRC 062 gun diode bias symbol JRC FF 30
Text: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A
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FM15TF-9,
E80276
E80271
FM15TF-9
JRC 062
gun diode bias symbol
JRC FF 30
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Untitled
Abstract: No abstract text available
Text: ! FM20TF-1 OS I MITSUBISHI MOSFET MODULE ! MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTLINE DRAWING FM 20TF10S 90 6 1 1 6 1 1 6 13 . j> 5 . 5 16 I . * ~ T f' G j PS u PG v PS v PG w PS w P; r iÿ r tU lr ifjlr r ? & co i in ,—i CVI -GulM SuN GvNSi/NG wN SyvN 64
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FM20TF-1
20TF10S
FM20TF-10S
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mitsubishi MOSFET
Abstract: FM30TF-10S fm30tf "MOSFET Module" full bridge inverter
Text: MITSUBISHI MOSFET MODULE FM30TF-1 OS MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING Dim ensions in mm F M 3 0 T F -10 S _ 7.5 _ 2 '. 7.5 19! . ! I 1 I 28.5 I 21 _ 7.5 16. 5 , I 28.5 11 I M 2 - ip 5.5 21.5 11 / '5 3 :3 1 1 c o l § i- _ l T L+ 98
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FM30TF-1
FM30TF-10S
mitsubishi MOSFET
FM30TF-10S
fm30tf
"MOSFET Module"
full bridge inverter
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mosfet 20a 300v
Abstract: S689
Text: POWEREX m M 3=IE D INC E R E • TSTMbEl ODOMSSM 7 BI PRX JEF24502S JEF25002S X Powerex, Inc., Hillls Street, \bungwood, Pennsylvania 1569/7 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Mos FETMOD
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JEF24502S
JEF25002S
Amperes/450-500
BP107,
JEF24502S,
300VT
mosfet 20a 300v
S689
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