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    MOSFET 30A 300V Search Results

    MOSFET 30A 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 30A 300V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP30NM30N

    Abstract: No abstract text available
    Text: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance


    Original     		PDF STP30NM30N O-220 O-220 STP30NM30N

    Untitled

    Abstract: No abstract text available
    Text: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance


    Original     		PDF STP30NM30N O-220

    P30NM30N

    Abstract: STP30NM30N JESD97
    Text: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance


    Original     		PDF STP30NM30N O-220 P30NM30N STP30NM30N JESD97

    W30NM60

    Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
    Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge


    Original     		PDF STW30NM60D O-247 W30NM60 ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312

    STW30NM60D

    Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
    Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge


    Original     		PDF STW30NM60D O-247 STW30NM60D JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312

    Untitled

    Abstract: No abstract text available
    Text: R6030ENX Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6030ENX O-220FM R1102A

    STW30NM60D

    Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
    Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STW30NM60D O-247 O-247 STW30NM60D 15a diode W30NM60 ZVS phase-shift converters W30NM60D

    Untitled

    Abstract: No abstract text available
    Text: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6030ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6030ENX Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.


    Original     		PDF R6030ENX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6030ENZ1 Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6030ENZ1 O-247 R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6030ENZ1 O-247 R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6030ENZ Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6030ENZ R1102A

    J 6920 FET

    Abstract: igbt 50V 420A IRFPS30N60K
    Text: PD- 94417 IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF IRFPS30N60K Super-247TM 5M-1994. O-274AA J 6920 FET igbt 50V 420A IRFPS30N60K

    mosfet 600V 30A

    Abstract: IRFPS30N60K IRFPS37N50A
    Text: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF 4417A IRFPS30N60K Super-247TM 12-Mar-07 mosfet 600V 30A IRFPS30N60K IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF 4417A IRFPS30N60K Super-247â 08-Mar-07

    mosfet 600V 30A

    Abstract: IRFPS37N50A power mosfet 600v mJ 6920 247t
    Text: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF IRFPS30N60KPbF Super-247TM 12-Mar-07 mosfet 600V 30A IRFPS37N50A power mosfet 600v mJ 6920 247t

    Untitled

    Abstract: No abstract text available
    Text: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF IRFPS30N60KPbF Super-247â 08-Mar-07

    12v 30a smps

    Abstract: mJ 6920 IRFPS37N50A avalanche diode 30A
    Text: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF IRFPS30N60KPbF Super-247TM IRFPS37N50A IRFPS37N50A 12v 30a smps mJ 6920 avalanche diode 30A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 = 600V = 30A ≤ 240mΩ Ω RDS on N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 O-247 063in) IXTH30N60L2 100ms

    IXTT30N60L2

    Abstract: 30n60l 30N60L2 IXTH30N60L2 IXTQ30N60L2
    Text: Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 = 600V = 30A ≤ 240mΩ Ω RDS on N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 O-247 063in) IXTH30N60L2 100ms IXTT30N60L2 30n60l 30N60L2 IXTQ30N60L2

    APT30M60J

    Abstract: MIC4452 544MH
    Text: APT30M60J 600V, 30A, 0.16Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT30M60J E145592 APT30M60J MIC4452 544MH

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE FS30SM-6 • V d s s . 300V • ros ON (MAX) .0 .1 7 Q • I D . 30A


    OCR Scan     		PDF FS30SM-6

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MOSFET MODULES FM30E2Y-9,-10 DC CH O PPER U SE INSULATED T Y P E FM30E2Y-9, -10 • I d . 30A •Vpss . 450/500V • 1-Element in a package • Insulated Type • U L Recognized


    OCR Scan     		PDF FM30E2Y-9 FM30E2Y-9, 450/500V E80276 E80271

    sml30m19jvr

    Abstract: No abstract text available
    Text: Illl Vrr r = mi SEM E SML30M19JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 300V ^30A 0.019Q Faster Switching


    OCR Scan     		PDF SML30M19JVR OT-227 sml30m19jvr