IRHY53Z30CM
Abstract: IRHY54Z30CM IRHY57Z30CM IRHY58Z30CM
Text: PD - 93824A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57Z30CM 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHY57Z30CM 100K Rads (Si) IRHY53Z30CM 300K Rads (Si) RDS(on) 0.03Ω 0.03Ω ID 18A* 18A* IRHY54Z30CM 600K Rads (Si)
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3824A
O-257AA)
IRHY57Z30CM
IRHY57Z30CM
IRHY53Z30CM
IRHY54Z30CM
IRHY58Z30CM
1000K
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD - 94164 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.022Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRL5Y7413CM
O-257AA
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IRL5Y7413CM
Abstract: No abstract text available
Text: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4164A
O-257AA)
IRL5Y7413CM
O-257AA
IRL5Y7413CM
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Untitled
Abstract: No abstract text available
Text: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4164A
O-257AA)
IRL5Y7413CM
O-257AA
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Untitled
Abstract: No abstract text available
Text: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD3055
O-252
SSD3055
30-Apr-2012
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40P03
Abstract: diode MARKING CODE 18A p-channel power mosfet 14A AF40P03 mosfet 30V 18A TO 252
Text: AF40P03 P-Channel Enhancement Mode Power MOSFET Features General Description -Lower On-Resistance -Simple Drive Requirement -Fast Switching Characteristic -RoHS Compliant -Pb Free Plating Product The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
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AF40P03
O-252
O-252
40P03
40P03
diode MARKING CODE 18A
p-channel power mosfet 14A
AF40P03
mosfet 30V 18A TO 252
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mosfet 30V 18A TO 252
Abstract: 2SJ601 smd 18A equivalent smd mosfet IC 46M S-108
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 MAX. VGS = -4.0 V, ID =-18 A Low Ciss: Ciss = 3300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 46m
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2SJ601
O-252
--18A
mosfet 30V 18A TO 252
2SJ601
smd 18A
equivalent smd mosfet
IC 46M
S-108
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Mosfet 40P03GH
Abstract: 40p03gj 40p03gh 40p03 40P03G AP40P03GJ AP40P03
Text: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial
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AP40P03GH/J
O-252
AP40P03GJ)
O-251
O-251
40P03GJ
Mosfet 40P03GH
40p03gj
40p03gh
40p03
40P03G
AP40P03GJ
AP40P03
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mosfet 30V 18A TO 252
Abstract: mosfet VDS 30V ID 18A TO 252 smd transistor nc 61 smd 18A 2SK3402 ciss 18-A
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3402 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss : Ciss = 3200 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max
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2SK3402
O-252
mosfet 30V 18A TO 252
mosfet VDS 30V ID 18A TO 252
smd transistor nc 61
smd 18A
2SK3402
ciss
18-A
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mosfet VDS 30V ID 18A TO 252
Abstract: 2SK3367 mosfet 30V 18A TO 252 smd transistor 26
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3367 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low on-resistance RDS on 1 = 9.0 m MAX. (VGS = 4.0 V, ID = 18 A) Low Ciss : Ciss = 2800 pF TYP. 2.3 Built-in gate protection diode
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2SK3367
O-252
mosfet VDS 30V ID 18A TO 252
2SK3367
mosfet 30V 18A TO 252
smd transistor 26
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930 18a diode smd
Abstract: 930 18a 2SK3641 930 diode smd
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A
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2SK3641
O-252
930 18a diode smd
930 18a
2SK3641
930 diode smd
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SSM9971GH
Abstract: mosfet VDS 30V ID 18A TO 252 ssm9971gj
Text: SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 36mΩ 25A ID G S Description G D S The SSM9971GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM9971GH
O-252
SSM9971GJ
O-251,
O-252
O-251
mosfet VDS 30V ID 18A TO 252
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mosfet 30V 18A TO 252
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V SSM40T03GH SSM40T03GJ SSM40
Text: SSM40T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BV DSS 30V R DS ON 25mΩ ID 28A S DESCRIPTION G D S The SSM40T03GH is in a TO-252 package, which is widely used for
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SSM40T03GH
O-252
SSM40T03GJ
O-251,
O-252
O-251
mosfet 30V 18A TO 252
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
SSM40T03GH SSM40T03GJ
SSM40
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SSM40P03
Abstract: No abstract text available
Text: SSM40P03 G H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Low gate-charge BV DSS -30V Simple drive requirement R DS(ON) 28mΩ G Fast switching -30A ID S Description G D S The SSM40P03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM40P03
SSM40P03H
O-252
SSM40P03J
O-251,
SSM40P03GH
SSM40P03GJ.
O-252
O-251
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40p03gj
Abstract: 40p03gh
Text: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D BVDSS -30V RDS ON Simple Drive Requirement Fast Switching Characteristic 28m ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial
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AP40P03GH/J
O-252
AP40P03GJ)
O-251
O-251
40P03GJ
40p03gj
40p03gh
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AP4563GH
Abstract: No abstract text available
Text: AP4563GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH D1/D2 ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant S1 G1 S2 P-CH G2 TO-252-4L
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AP4563GH
O-252-4L
100ms
AP4563GH
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9936 mosfet
Abstract: IRFB18N50K IRFBL18N50K
Text: PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and
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IRFBL18N50K
Dio252-7105
9936 mosfet
IRFB18N50K
IRFBL18N50K
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IRFB18N50K
Abstract: No abstract text available
Text: PD- 93926 PROVISIONAL IRFB18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and
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IRFB18N50K
O-220AB
Rec252-7105
IRFB18N50K
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2756-01R H tL B lE U 'U G à J Ê FAP-IIS Series N-channel MOS-FET 45 0 V 18A 80W > Outline Drawing > Features - 0 ,4 5 Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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OCR Scan
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2SK2756-01R
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4563gh
Abstract: AP4563GH MOSFET N 30V 30A 252 4563g
Text: AP4563GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH ▼ Simple Drive Requirement D1/D2 ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 S2 P-CH G2 TO-252-4L Description Advanced Power MOSFETs from APEC provide the
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AP4563GH
O-252-4L
O-252
4563GH
4563gh
AP4563GH
MOSFET N 30V 30A 252
4563g
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2256-01 N-channel MOS-FET FAP-IIA Series 250V 18A 80W > Outline Drawing > Features - 0 ,1 8 0 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2256-01
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Untitled
Abstract: No abstract text available
Text: F U JI 2SK2755-01 N-channel MOS-FET 450V 0,45Q 18A 125W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5
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2SK2755-01
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IRFN9140
Abstract: JANTX2N7236U JANTXV2N7236U
Text: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International
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91553D
IRFN9140
JANTX2N7236U
JANTXV2N7236U
MIL-PRF-19500/595
-100A/
-100V,
IRFN9140
JANTX2N7236U
JANTXV2N7236U
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Untitled
Abstract: No abstract text available
Text: PD - 91553E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553E
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
IRFN9140
-100A/
-100V,
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