90T03GH
Abstract: No abstract text available
Text: AP90T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On- resistance D BVDSS 30V RDS ON Simple Drive Requirement 4m ID Fast Switching Characteristic G 75A S Description The TO-252 package is widely preferred for commercial-industrial
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AP90T03GH/J
O-252
AP90T03GJ)
O-251
O-251
90T03GJ
90T03GH
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PDF
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Untitled
Abstract: No abstract text available
Text: AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial
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AP6679GH/J
O-252
AP6679GJ)
O-251
O-251
6679GJ
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PDF
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85t03gh
Abstract: 85t03g
Text: AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D BVDSS RDS ON Simple Drive Requirement ID Fast Switching G 30V 6m 75A S Description G D S The TO-252 package is widely preferred for all commercial-industrial
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AP85T03GH/J
O-252
AP85T03GJ)
O-251
O-251
85T03GJ
85t03gh
85t03g
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PDF
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Untitled
Abstract: No abstract text available
Text: AP90T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement BVDSS 30V RDS ON 4mΩ ID ▼ Fast Switching Characteristic G 75A S Description The TO-252 package is widely preferred for commercial-industrial
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Original
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AP90T03GH/J
O-252
AP90T03GJ)
O-251
100us
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: AP6679GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A RoHS Compliant S Description G The TO-252 package is widely preferred for commercial-industrial
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Original
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AP6679GH/J-HF
O-252
AP6679GJ)
O-251
O-251
6679GJ
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PDF
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6679GH
Abstract: 6679GJ 6679G AP6679gh marking codes transistors SSs PART MARKING 24V
Text: AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial
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Original
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AP6679GH/J
O-252
AP6679GJ)
O-251
O-251
6679GJ
6679GH
6679GJ
6679G
AP6679gh
marking codes transistors SSs
PART MARKING 24V
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PDF
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GFD55N03
Abstract: No abstract text available
Text: GFD55N03 Vishay Semiconductors New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T ENF G TO-252 DPAK D VDS 30V RDS(ON) 7mΩ ID 75A 0.265 (6.73) 0.255 (6.48) G 0.094 (2.39) 0.087 (2.21) S 0.214 (5.44) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) 0.190
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GFD55N03
O-252
8-Jan-02
GFD55N03
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APM3004N
Abstract: APM3004NU STD-020C VGEN-10V APM3004
Text: APM3004NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/75A, RDS ON =3.3mΩ (typ.) @ VGS=10V G RDS(ON)=4.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3004NU
0V/75A,
O-252
APM3004N
APM3004N
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
APM3004NU
STD-020C
VGEN-10V
APM3004
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PDF
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SSD70N03-04D
Abstract: MosFET
Text: SSD70N03-04D 75A, 30V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power
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SSD70N03-04D
O-252
O-252dth
14-Jan-2011
SSD70N03-04D
MosFET
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -96097A IRF2903ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ G ID = 75A S
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-96097A
IRF2903ZPbF
O-220AB
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -96097A IRF2903ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ G ID = 75A S
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-96097A
IRF2903ZPbF
O-220AB
IRF2903ZS
O-220AB
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PDF
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90T03GH
Abstract: AP90T03GH 90t03 90t03g marking codes transistors SSs AP90T03GJ
Text: AP90T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 4mΩ ID G 75A S Description G The TO-252 package is widely preferred for commercial-industrial
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Original
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AP90T03GH/J
O-252
AP90T03GJ)
O-251
O-251
90T03GJ
90T03GH
AP90T03GH
90t03
90t03g
marking codes transistors SSs
AP90T03GJ
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PDF
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6679gh
Abstract: 6679GJ AP6679GH 6679G marking codes transistors SSs
Text: AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial
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Original
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AP6679GH/J
O-252
AP6679GJ)
O-251
O-251
6679GJ
6679gh
6679GJ
AP6679GH
6679G
marking codes transistors SSs
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PDF
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SSM85T03H
Abstract: No abstract text available
Text: SSM85T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 30V R DS ON 6mΩ 75A ID G S Description The SSM85T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM85T03H
O-252
SSM85T03J
O-251,
O-252liness
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Abstract: TO-251 footprint SSM90T03GH SSM90T03 ssm90t03gj
Text: SSM90T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BVDSS 30V R DS ON 4mΩ ID 75A S DESCRIPTION G D S The SSM90T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM90T03GH
O-252
SSM90T03GJ
O-251,
O-252
O-251
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
TO-251 footprint
SSM90T03
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PDF
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ssm85T03
Abstract: MOSFET having TO-252 PAckage ssm85t03gh ssm85t03j
Text: SSM85T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BV DSS 30V R DS ON 6mΩ ID 75A S DESCRIPTION The SSM85T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM85T03GH
O-252
SSM85T03J
O-251,
ssm85T03
MOSFET having TO-252 PAckage
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PDF
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SSM90T03H
Abstract: ssm90t03j
Text: SSM90T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 30V R DS ON 4mΩ 75A ID G S Description G D S The SSM90T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM90T03H
O-252
SSM90T03J
O-251,
O-252
O-251
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PDF
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IRF P CHANNEL MOSFET
Abstract: irf1010 applications mosfet 30V 18A TO 252 AN-1005
Text: PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ
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IRF2903ZPbF
IRF P CHANNEL MOSFET
irf1010 applications
mosfet 30V 18A TO 252
AN-1005
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PDF
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AN-1005
Abstract: No abstract text available
Text: PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ
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IRF2903ZPbF
O-220AB
AN-1005
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PDF
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AN-1005
Abstract: No abstract text available
Text: PD - 96098 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZSPbF IRF2903ZLPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V
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IRF2903ZSPbF
IRF2903ZLPbF
AN-994.
AN-1005
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96988 IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ
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IRF2903Z
IRF2903ZS
IRF2903ZL
AN-994.
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PDF
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IRF2903Z
Abstract: IRF2903ZL IRF2903ZS 24v 12v 10A regulator
Text: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ
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6988A
IRF2903Z
IRF2903ZS
IRF2903ZL
AN-994.
IRF2903Z
IRF2903ZL
IRF2903ZS
24v 12v 10A regulator
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ
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6988A
IRF2903Z
IRF2903ZS
IRF2903ZL
AN-994.
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PDF
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IRF2903Z
Abstract: IRF2903ZL IRF2903ZS
Text: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ
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6988A
IRF2903Z
IRF2903ZS
IRF2903ZL
AN-994.
IRF2903Z
IRF2903ZL
IRF2903ZS
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PDF
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