APT9301
Abstract: 30 volts boost converters APT30D60B mosfet 350v 30a
Text: APPLICATION NOTE APT9301 By: Ken Dierberger NEW ULTRAFAST RECOVERY DIODE TECHNOLOGY IMPROVES PERFORMANCE OF HIGH FREQUENCY POWER CIRCUITS Presented at HFPC ‘93 USA Presents a comparison between APT’s new FRED and two competitor’s devices NEW ULTRAFAST RECOVERY DIODE TECHNOLOGY IMPROVES
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APT9301
APT30D60B
APT30D60B
APT9301
30 volts boost converters
mosfet 350v 30a
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Untitled
Abstract: No abstract text available
Text: APT5 0 1 0 JV R U 3 A dvanced P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OT-227
APT5010JVRU3
OT-227
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mosfet 350v 30a
Abstract: No abstract text available
Text: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU2
OT-227
APT5010JVRU2
OT-227
mosfet 350v 30a
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU3 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU3
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU2 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU2
OT-227
OT-227
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power mosfet 350v 30a to 247
Abstract: No abstract text available
Text: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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IXKK85N60C
O-264
ID100
power mosfet 350v 30a to 247
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SHDCG224802
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. - Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • Isolated Hermetic Metal Package • Low RDS on ; Low Effective Capacitance • Ultra Low Gate Charge; very high dv/dt ratings
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SHD224802
SHDCG224802
SHDCG224802)
ID100
SHDCG224802
O-258
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SHDCG224802
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings
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SHD224802
SHDCG224802
SHDCG224802)
ID100
SHDCG224802
O-258
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MJ1800
Abstract: APT47N60HC3 335A
Text: APT47N60HC3 600V 33.5A 0.080Ω Super Junction MOSFET TO-258 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-258 Package D G S MAXIMUM RATINGS Symbol VDSS
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APT47N60HC3
O-258
O-258
MJ1800
APT47N60HC3
335A
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SHD224802
Abstract: SHDCG224802 ID100
Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings
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SHD224802
SHDCG224802
SHDCG224802)
ID100
SHD224802
SHDCG224802
ID100
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT5012JNU2
5012JNU2
OT-227
Page68
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd
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APT5012JNU3
5012JNU3
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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tf 115 250v 15a
Abstract: No abstract text available
Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLLU2
E145592
tf 115 250v 15a
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU3 44A 0.100Ω 500V POWER MOS V A S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010JVRU3
OT-227
E145592
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APT5010JLLU3
Abstract: No abstract text available
Text: APT5010JLLU3 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5010JLLU3
E145592
APT5010JLLU3
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5012JN
Abstract: APT5012JNU3 APTS012JNU3 APT5012
Text: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T
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APT5012JNU3
5012JNU3
OT-227
00DlbÃ
5012JN
APTS012JNU3
APT5012
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APT5012JNU2
Abstract: ST-200 transformer DIODE BAT 17
Text: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m
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APT5012JNU2
5012JNU2
OT-227
ST-200 transformer
DIODE BAT 17
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apt5010
Abstract: No abstract text available
Text: APT5010JVRU2 44A 0.100Ω 500V POWER MOS V K S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010JVRU2
OT-227
E145592
apt5010
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APT5010JLL
Abstract: APT5010JLLU2 0830A
Text: APT5010JLLU2 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5010JLLU2
E145592
APT5010JLL
APT5010JLLU2
0830A
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100pf,63v ceramic capacitor
Abstract: 75 LS 541 100pf,63v BCX17 BCX19 IMAT5011 250v capacitor 4011 pinout
Text: IMAT5011 500V 30A INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configuration, with associated drivers, protections and isolation circuits. Each switch is connected with series and antiparallel fast recovery “soft” FREDs in order to inhibit the
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IMAT5011
100KHz.
board00
F-33700
6160xx1T2300
100pf,63v ceramic capacitor
75 LS 541
100pf,63v
BCX17
BCX19
250v capacitor
4011 pinout
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SM25N
Abstract: ssm25n40
Text: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40
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7Tb414H
SSH25N35/25N40
SSM25N35
SSM25N40
SSH25N35
SSH25N40
SSM25N35/25N40
SM25N
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bridge rectifier single phase 240V AC
Abstract: 220v 100a diode bridge mosfet 3kw PFC 3kw 3kw mosfet 3kw pfc bridge rectifier 240V AC TRANSISTOR 3kw 220v 25a diode bridge bridge rectifier 240V AC 240v dc
Text: LMH5010RB 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LMH5010RB is an Application Specific Power Module ASPM that integrates all the necessary power functions to build a converter, up to 3KW, with a 220/240V AC input. System design time is dramatically
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LMH5010RB
220/240V
100KHz
6160xx1T2300
F-33700
bridge rectifier single phase 240V AC
220v 100a diode bridge
mosfet 3kw
PFC 3kw
3kw mosfet
3kw pfc
bridge rectifier 240V AC
TRANSISTOR 3kw
220v 25a diode bridge
bridge rectifier 240V AC 240v dc
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Untitled
Abstract: No abstract text available
Text: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270L-05S
5-475V
5-350V
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