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    MOSFET 3570 Search Results

    MOSFET 3570 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 3570 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 mΩ Features Description • RDS on = 34 mΩ (Typ.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


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    FDA69N25 PDF

    ISD 1720

    Abstract: ON5040 FDA69N50
    Text: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 m Features Description • RDS on = 41 m (Max.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


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    FDA69N25 FDA69N25 FDA69N50 ISD 1720 ON5040 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N65 22N65 O-247 22N65L-T47-T 22N65G-T47-T QW-R502-466 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N60 22N60 O-247 22N60L 22N60G 22N60-T47-T 22N60L-T47-T QW-R502-216 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N60 22N60 22N60L-T47-T 22N60G-T47-T 22N60L-T3P-T 22N60G-T3P-T 22N60L-at QW-R502-216 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N60 22N60 22N60L-T47-T 22N60G-T47-T 22N60L-T3P-T 22Nat QW-R502-216 PDF

    22N60

    Abstract: 22N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N60 22N60 O-247 O-230 22N60L-Tther QW-R502-216 22N60L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N60 22N60 O-247 22N60L-T47-T 22N60G-T47-T QW-R502-216 PDF

    22N60

    Abstract: TO-247
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


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    22N60 22N60 O-247 22N60L-T47-T 22N60G-T47-T QW-R502-216 TO-247 PDF

    22N65

    Abstract: 13A 650V MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a


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    22N65 22N65 O-247 22N65L-T47-T 22N65G-T47-T QW-R502-466 13A 650V MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a


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    22N65 O-247 22N65 22N65L-T47-T 22N65G-T47-T O-247 QW-R502-466 PDF

    22N60

    Abstract: SMPS MOSFET 216d
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    22N60 22N60 O-247 22N60L-T47-T 22N60G-T47-T QW-R502-216 SMPS MOSFET 216d PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    22N60 22N60 O-247 22N60L-T47-T 22N60G-T47-T QW-R502-216 PDF

    22N60

    Abstract: MOSFET dynamic parameters power mosfet 600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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    22N60 22N60 O-247 22N60L 22N60G 22N60-T47-T 22N60L-T47-T 22N60G-T47-t QW-R502-216 MOSFET dynamic parameters power mosfet 600v PDF

    035H

    Abstract: IRFP22N60K IRFPE30
    Text: PD - 94414A SMPS MOSFET IRFP22N60K HEXFET Power MOSFET Applications VDSS RDS on typ. l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits


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    4414A IRFP22N60K O-247AC 12-Mar-07 035H IRFP22N60K IRFPE30 PDF

    irf 4710

    Abstract: 035H IRFP22N60K IRFPE30
    Text: PD - 94414 SMPS MOSFET IRFP22N60K HEXFET Power MOSFET Applications VDSS RDS on typ. l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits


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    IRFP22N60K O-247AC O-247AC IRFPE30 irf 4710 035H IRFP22N60K IRFPE30 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94414A SMPS MOSFET IRFP22N60K HEXFET Power MOSFET Applications VDSS RDS on typ. l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits


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    4414A IRFP22N60K O-247AC 08-Mar-07 PDF

    irf 4710

    Abstract: IRFP22N60K 035H IRFPE30 47-10 diode mosfet IRFP22N60K
    Text: PD - 94414A SMPS MOSFET IRFP22N60K HEXFET Power MOSFET Applications VDSS RDS on typ. l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits


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    4414A IRFP22N60K O-247AC DissipatiTO-247AC IRFPE30 irf 4710 IRFP22N60K 035H IRFPE30 47-10 diode mosfet IRFP22N60K PDF

    irf 4710

    Abstract: 035H IRFPE30 transformer 480v to 60v
    Text: PD - 94876 IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 600V


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    IRFP22N60KPbF O-247AC O-247AC IRFPE30 irf 4710 035H IRFPE30 transformer 480v to 60v PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94876 IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 600V


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    IRFP22N60KPbF O-247AC 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    PMV50UPE O-236AB) PDF

    irfp22n60

    Abstract: irf*2n60 035H IRFPE30 power mosfet 600v irfp22n60kpbf 91208
    Text: PD - 94876 IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 600V


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    IRFP22N60KPbF O-247AC 12-Mar-07 irfp22n60 irf*2n60 035H IRFPE30 power mosfet 600v irfp22n60kpbf 91208 PDF

    2SK1432

    Abstract: No abstract text available
    Text: Ordering number:EN3570 N-Channel Silicon MOSFET 2SK1432 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. unit:mm 2063A


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    EN3570 2SK1432 2SK1432] O-220ML 2SK1432 PDF

    K 3570

    Abstract: 2SK1432 mosfet 3570
    Text: Ordering number:EN3570 N-Channel Silicon MOSFET 2SK1432 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. unit:mm 2063A


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    EN3570 2SK1432 2SK1432] O-220ML K 3570 2SK1432 mosfet 3570 PDF