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    MOSFET 3710 Search Results

    MOSFET 3710 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 3710 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET IRF 3710

    Abstract: IC 7486 F7101 EIA-541 IRF7101
    Text: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4


    Original     		IRF7834PbF EIA-481 EIA-541. MOSFET IRF 3710 IC 7486 F7101 EIA-541 IRF7101 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4


    Original     		IRF7834PbF EIA-481 EIA-541. PDF

    DV 47 25V

    Abstract: mosfet 3710
    Text: HEXFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements E 3710 Power MOSFET VDSS = 100V ID25 = 60A RDS ON = 0.023 Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		O-220 50watts. DV 47 25V mosfet 3710 PDF

    AP3710

    Abstract: No abstract text available
    Text: AP3710GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 23mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the designer with


    Original     		AP3710GP O-220 O-220 3710GP AP3710 PDF

    scr gate driver ic

    Abstract: HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet
    Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards


    Original     		U-137 1000pF UC3724 UC3725 600kHz O-220 scr gate driver ic HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet PDF

    HEXFET Power MOSFET Designers Manual

    Abstract: "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710
    Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards


    Original     		U-137 HEXFET Power MOSFET Designers Manual "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710 PDF

    STU16NB50

    Abstract: No abstract text available
    Text: STU16NB50 N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STU16NB50 A-Max220 STU16NB50 PDF

    2 switch forward converter

    Abstract: 48v 10A regulator SI7456DP 1B MOSFET fzt690b B340A multiple output regulator power supply high efficiency rectifier 100v 1a poscap 470uf 2.5v D01813P-122HC
    Text: advertisement Multiple Output Isolated Power Supply Achieves High Efficiency with Secondary Side Synchronous Post Regulator – Design Note 299 Charlie Zhao and Wei Chen synchronous rectification. The primary side controller uses the LT3781; a current mode 2-switch forward controller with built-in MOSFET drivers. On the secondary


    Original     		LT3781; LTC1698, LT3710 LTC1698 B2100 Si7456DP PA0191 V/10A MMSZ5241B 2 switch forward converter 48v 10A regulator 1B MOSFET fzt690b B340A multiple output regulator power supply high efficiency rectifier 100v 1a poscap 470uf 2.5v D01813P-122HC PDF

    Untitled

    Abstract: No abstract text available
    Text: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    OCR Scan     		STU16NB50 A-Max220 Max220 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10HYG PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened


    Original     		STRH40P10 O-254AA SC06140p PDF

    to-254aa

    Abstract: No abstract text available
    Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened


    Original     		STRH40P10 O-254AA STRH40P10FSY1 STRH40P10FSY01 to-254aa PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		STRH40P10 O-254AA SC06140p DocID18354 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		STRH40P10 O-254AA SC06140p DocID18354 PDF

    u16nb50

    Abstract: u16nb STU16NB50
    Text: STU16NB50  N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE ST U16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STU16NB50 A-Max220 U16NB50 u16nb50 u16nb STU16NB50 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10Hy PDF

    schematic diagram 48V 500W Controller

    Abstract: schematic diagram PC Power supply 500w schematic diagram 36V 500W Controller MUR120S 500w power amplifier circuit diagram 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram 12v 10/12 pin flyback transformer MARKING TRANSISTOR BD RC 3710EFE
    Text: LT3710 Secondary Side Synchronous Post Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 3710 is a high efficiency step-down switching regulator intended for auxiliary outputs in single secondary winding, multiple output power supplies.


    Original     		LT3710 500kHz 16-Pin LT3710 LT1737 LT1950 LT3804 3710f schematic diagram 48V 500W Controller schematic diagram PC Power supply 500w schematic diagram 36V 500W Controller MUR120S 500w power amplifier circuit diagram 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram 12v 10/12 pin flyback transformer MARKING TRANSISTOR BD RC 3710EFE PDF

    B340A

    Abstract: LT3710 LT3710EFE LT3781 LTC1698 Si7440DP TSSOP-16 mosfet short circuit protection schematic diagra
    Text: Final Electrical Specifications LT3710 Secondary Side Synchronous Post Regulator July 2002 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 3710 is a high efficiency step-down switching regulator intended for auxiliary outputs in single secondary winding, multiple output power supplies.


    Original     		LT3710 500kHz 16-Pin LT3710 LT1431 LT1680 LT3781 LT1725 LT1737 3710i B340A LT3710EFE LT3781 LTC1698 Si7440DP TSSOP-16 mosfet short circuit protection schematic diagra PDF

    sepic snubber

    Abstract: schematic diagram 48V 500W Controller
    Text: LT3710 Secondary Side Synchronous Post Regulator FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 3710 is a high efficiency step-down switching regulator intended for auxiliary outputs in single secondary winding, multiple output power supplies.


    Original     		LT3710 500kHz 16-Pin LT3710 LT1737 LT1950 LT3804 3710f sepic snubber schematic diagram 48V 500W Controller PDF

    Untitled

    Abstract: No abstract text available
    Text: Final Electrical Specifications LT3804 Secondary Side Dual Output Controller with Opto Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 3804 is a high efficiency step-down switching regulator with optocoupler feedback control for regulating multiple outputs in single-secondary winding isolated


    Original     		LT3804 800kHz 28-Lead LT3804 LT3710 LTC3722 LT3781 3804i PDF

    TEA1703

    Abstract: No abstract text available
    Text: AN11142 GreenChip TEA1755 integrated PFC and flyback controller Rev. 1 — 12 November 2012 Application note Document information Info Content Keywords GreenChip, TEA1755, PFC, flyback, high-efficiency, adaptor, notebook, PC power, low-power Standby power mode


    Original     		AN11142 TEA1755 TEA1755, TEA1703 PDF

    TEA1507P

    Abstract: TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE
    Text: eratum.qxd 26/2/04 2:49 pm Page 1 Semiconductors - Power Supply & Control Switching Regulators Fixed Negative & Positive Type Manuf Package IOUT SW VOUT VIN (A)Max (V)Typ (V)Min-Max S/down SMT Features LT1300CN8 LT DIP8 0•62 3·3/5 1·8-8 N LM2597HVN-3·3


    Original     		LT1300CN8 LM2597HVN-3 LM2675N-3 LT1507CS8-3 LM2575T-3 O220-5 L4973V3 DIP18 REG710NA3 OT23-6 TEA1507P TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE PDF

    APPLICATION NOTES LM7812

    Abstract: Transistor LM7812 Equivalent T8434 330uf, 35v electrolytic capacitor 2213P-A600-3B HV9112DB3 102K 400V CAPACITOR lm7812 regulator ic LM7812 TO-92 pwm lm2904
    Text: HV9112DB3 Demo Board Unit HV9112DB3 HV9112DB3 Demo Board by Derek Koonce, Senior Applications Engineer Performance Summary Input voltage 20REN max +42.5V to +70VDC Output voltages 3. 4. 5. Output rectifier and filter Feedback circuitry Active discharge circuitry


    Original     		HV9112DB3 HV9112DB3 20REN 70VDC -155V 72kHz HV9112NG -155V APPLICATION NOTES LM7812 Transistor LM7812 Equivalent T8434 330uf, 35v electrolytic capacitor 2213P-A600-3B 102K 400V CAPACITOR lm7812 regulator ic LM7812 TO-92 pwm lm2904 PDF