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    MOSFET 4435SC Search Results

    MOSFET 4435SC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4435SC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4435SC

    Abstract: Mos-Fet 4435SC C391Q8 mosfet 4435sc
    Text: CYStech Electronics Corp. Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Description The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.


    Original     		PDF C391Q8 MTP4435Q8 MTP4435Q8 UL94V-0 4435SC Mos-Fet 4435SC C391Q8 mosfet 4435sc

    4435sc

    Abstract: Mos-Fet 4435SC MEP4435Q8 C391Q8 mosfet 4435sc
    Text: CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MEP4435Q8 Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.


    Original     		PDF C391Q8-A MEP4435Q8 MEP4435Q8 UL94V-0 4435sc Mos-Fet 4435SC C391Q8 mosfet 4435sc

    4435SC

    Abstract: Mos-Fet 4435SC mosfet 4435sc SSG4435 SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620
    Text: SSG4435 -8A, -30V, RDS ON 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF SSG4435 SSG4435 4435SC 01-Mar-2011 4435SC Mos-Fet 4435SC mosfet 4435sc SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620

    4435sc

    Abstract: WTK4435 Mos-Fet 4435SC mosfet 4435sc le1d
    Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 7 6 D 3 D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE 5 D 4 G -30 VOLTAGE Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V


    Original     		PDF WTK4435 WTK4435 300us, 03-May-07 4435sc Mos-Fet 4435SC mosfet 4435sc le1d