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    MOSFET 4446 Search Results

    MOSFET 4446 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4446 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXMP2120E5

    Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
    Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120G4 -200V; 200mA OT23-5 ZXMP2120E5) OT223 OT223 ZXMP2120E5 ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC PDF

    ZXMN0545G4TA

    Abstract: ZXMN0545G4 ZXMN0545G4TC
    Text: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMN0545G4 140mA OT223 OT223 ZXMN0545G4TA ZXMN0545G4 ZXMN0545G4TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMN0545G4 140mA OT223 OT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120E5 -200V; -122mA OT223 ZXMP2120G4) OT23-5 OT23-5 PDF

    ZXMP2120G4TA

    Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
    Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120G4 -200V; 200mA OT23-5 ZXMP2120E5) OT223 OT223 ZXMP2120G4TA ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120E5 -200V; -122mA OT223 ZXMP2120G4) OT23-5 OT23-5 PDF

    P120

    Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
    Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120E5 -200V; -122mA OT223 ZXMP2120G4) OT23-5 OT23-5 P120 ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D PDF

    sot23-5 marking ha

    Abstract: SOT23-5 TBA
    Text: ZXMP2120E5 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = 150mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120E5 -200V; 150mA OT223 ZXMP2120G4) OT23-5 OT23-5 sot23-5 marking ha SOT23-5 TBA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMP2120G4 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120G4 -200V; 200mA OT23-5 ZXMP2120E5) OT223 OT223 PDF

    TBA 611

    Abstract: No abstract text available
    Text: ZXMN0545G4 ADVANCE INFORMATION 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMN0545G4 140mA OT223 OT223 ZXMN0545G4TA TBA 611 PDF

    522BS

    Abstract: BSP75GTA
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75G 550mJ OT223 522-BSP75GTA BSP75GTA 522BS BSP75GTA PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75G 550mJ OT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75N 550mJ OT223 PDF

    BSP75N

    Abstract: No abstract text available
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75N 550mJ OT223 PDF

    BSP75G

    Abstract: BSP75GTA BSP75GTC
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75G 550mJ OT223 BSP75G BSP75GTA BSP75GTC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		ZXMP2120FF OT23F 48mbH D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75G 550mJ OT223 PDF

    TS16949

    Abstract: ZXMN3F30FH ZXMN3F30FHTA
    Text: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features


    Original     		ZXMN3F30FH ZXMN3F30FHTA D-81541 TS16949 ZXMN3F30FH ZXMN3F30FHTA PDF

    diode marking 226

    Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
    Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		ZXMN2F30FH ZXMN2F30FHTA D-81541 diode marking 226 TS16949 ZXMN2F30FH ZXMN2F30FHTA PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA PDF

    3G32D

    Abstract: TS16949 ZXMN3G32DN8 ZXMN3G32DN8TA
    Text: ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.028 @ VGS= 10V 7.1 0.045 @ VGS= 4.5V 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features


    Original     		ZXMN3G32DN8 ZXMN3G32DN8TA 3G32D D-81541 3G32D TS16949 ZXMN3G32DN8 ZXMN3G32DN8TA PDF

    ZXMN2F34FHTA

    Abstract: TS16949 ZXMN2F34FH
    Text: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		ZXMN2F34FH ZXMN2F34FHTA D-81541 ZXMN2F34FHTA TS16949 ZXMN2F34FH PDF

    BSP75G

    Abstract: No abstract text available
    Text: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		BSP75G 550mJ OT223 SCBSP75GDSC BSP75G PDF