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    MOSFET 48 63NG Search Results

    MOSFET 48 63NG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 48 63NG Datasheets Context Search

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    mosfet 63ng

    Abstract: 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng

    mosfet 63ng

    Abstract: 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N

    mosfet 63ng

    Abstract: 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N