FDA217STR
Abstract: No abstract text available
Text: FDA217 Dual MOSFET Driver INTEGRATED CIRCUITS DIVISION Parameter Open Circuit Voltage Short Circuit Current Input Control Current Rating 12 4.5 5 Description The FDA217 is a dual photovoltaic MOSFET driver. Each independent driver consists of an LED that is
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FDA217
FDA217
DS-FDA217-R01
FDA217STR
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DS-FDA217-R02
Abstract: photovoltaic driver FDA217
Text: FDA217 Dual MOSFET Driver INTEGRATED CIRCUITS DIVISION Parameter Open Circuit Voltage Short Circuit Current Input Control Current Rating 12 4.5 5 Description The FDA217 is a dual photovoltaic MOSFET driver. Each independent driver consists of an LED that is
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FDA217
FDA217
DS-FDA217-R02
DS-FDA217-R02
photovoltaic driver
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5252 F mosfet
Abstract: TLP220
Text: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series
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TLP220
TLP227G
TLP222G,
TLP592G,
TLP172G
TLP192G)
TLP222G-2,
TLP202G)
5252 F mosfet
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FDA217
Abstract: MOSFET
Text: FDA217 Dual Photovolatic MOSFET Driver INTEGRATED CIRCUITS DIVISION Parameter Open Circuit Voltage Short Circuit Current Rating 12.2 9.1 Description The FDA217 is a dual photovoltaic MOSFET driver. Each independent driver consists of an LED that is optically coupled to a photodiode array.
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FDA217
FDA217
3750Vrms
DS-FDA217-R03
MOSFET
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tlp250 application note
Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
Text: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT
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TLP250
/TLP250F
TLP250
TLP250F
tlp250 application note
tlp2501
TLP250 application
igbt drive tlp250
TLP251
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Untitled
Abstract: No abstract text available
Text: IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID (@TC (Bottom) = 25°C) 100 A 1.10 m PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters
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IRFH4210DPbF
com/technical-info/appnotes/an-994
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID (@TC (Bottom) = 25°C) 100 A 1.10 m PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters
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IRFH4210DPbF
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2sk4110
Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3
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BCE0017D
S-167
BCE0017E
2sk4110
2SK4106
2SK4111
2SK3561 equivalent
2sk3797 equivalent
2SK2996 equivalent
2SK2843 equivalent
2sK2961 equivalent
2SK4112
2SK3799 equivalent
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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mosfet 4812
Abstract: mosfet 4812 datasheet RG-161 Thermal Resistance vs. Mounting Pad Area AN7254 AN7260 ITF87072DK8T MS-012AA TB370
Text: ITF87072DK8T TM Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V
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ITF87072DK8T
MS-012AA)
mosfet 4812
mosfet 4812 datasheet
RG-161
Thermal Resistance vs. Mounting Pad Area
AN7254
AN7260
ITF87072DK8T
MS-012AA
TB370
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AN7254
Abstract: AN7260 ITF87072DK8T MS-012AA TB370
Text: ITF87072DK8T Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V
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ITF87072DK8T
MS-012AA)
AN7254
AN7260
ITF87072DK8T
MS-012AA
TB370
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Untitled
Abstract: No abstract text available
Text: ITF87072DK8T TM Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V
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ITF87072DK8T
MS-012AA)
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
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transistor compatible 2SK3569
Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Text: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series
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TLP285/TLP781)
TB6818FG/TB6819FG)
SCE0024B
SCE0024C
transistor compatible 2SK3569
TK12A65D
2SK3569 equivalent
tk6a65d equivalent
TB-7005
TPCA8019-H
TPCA8023-H
tk10a60d equivalent
TPCA8030-H
p 181 Photocoupler
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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mosfet 4812
Abstract: FDA215S JESD-625 EIA-481-2 FDA215 J-STD-033 W1600
Text: FDA215 MOSFET Driver Parameter Typical Open Circuit Voltage Typical Short Circuit Current Input Control Current Rating 5.5 2.5 5 Units V A mA Features • Optically Isolated, Input to Output • Dual Independent, Floating Outputs for Parallel, Series, or Isolated Configuration
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FDA215
FDA215
DS-FDA215-R05
mosfet 4812
FDA215S
JESD-625
EIA-481-2
J-STD-033
W1600
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FDA215
Abstract: MOSFET
Text: FDA215 MOSFET Driver INTEGRATED CIRCUITS DIVISION Parameter Typical Open Circuit Voltage Typical Short Circuit Current Input Control Current Rating 5.5 2.5 5 Units V A mA Features • Optically Isolated, Input to Output • Dual Independent, Floating Outputs for Parallel,
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FDA215
FDA215
DS-FDA215-R06
MOSFET
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Untitled
Abstract: No abstract text available
Text: FDA215 MOSFET Driver Parameter Typical Open Circuit Voltage Typical Short Circuit Current Input Control Current Rating 5.5 2.5 5 Units V A mA Features • Optically Isolated, Input to Output • Dual Independent, Floating Outputs for Parallel, Series, or Isolated Configuration
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FDA215
FDA215
DS-FDA215-R05
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TPD*1039s
Abstract: TPD7001BF TPD2005F 5252 E 0903 TPD7203 zener diode reference guide highside switch array tpd1008sa TPD1039S tpd2007f
Text: Intelligent Power Devices PRODUCT GUIDE Power MOSFETs with Built-In Protection Function Outline • This power MOSFET incorporates a protection function using a newly-developed simple process. ● Chip Control Section Power Section ● Construction N-MOS and DMOS process
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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BCE0010A
GT30F121
GT30G121
GT30G131
MG30T1AL1
GT30*122
GT45F12
MG60M1AL1
gt30f
GT60M301
GT60M101
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Untitled
Abstract: No abstract text available
Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the
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CPC1580
CPC1580
3750Vrms
DS-CPC1580-R01
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Untitled
Abstract: No abstract text available
Text: PLA191 Single Pole, Normally Open OptoMOS Relay Parameters Blocking Voltage Load Current Max On-resistance Ratings 400 250 8 Description Units VP mA Ω PLA191 is a single-pole, normally open 1-Form-A solid state relay that uses optically coupled MOSFET
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PLA191
PLA191
5000Vrms
DS-PLA191-R02
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J-STD-033
Abstract: LBA126L LBA126LS
Text: LBA126L Dual Single-Pole OptoMOS Relay Parameter Blocking Voltage Load Current Max RON Ratings 250 150 20 Units VP mA Ω The relay outputs are constructed with efficient MOSFET switches and photovoltaic die that use Clare's patented OptoMOS architecture, while the
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LBA126L
LBA126L
150mA,
3750Vrms
DS-LBA126L-R03
J-STD-033
LBA126LS
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