MOSFET 4841NH Search Results

MOSFET 4841NH Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 4841NH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet 4841NH Abstract: No abstract text available Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices	Original	PDF	NTMFS4841NH AND8195/D NTMFS4841NH/D mosfet 4841NH
4841NH Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices	Original	PDF	NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
4841NH Abstract: 4841N NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*	Original	PDF	NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH 4841N NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH
Untitled Abstract: No abstract text available Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices	Original	PDF	NTMFS4841NH AND8195/D NTMFS4841NH/D
4841Nh Abstract: No abstract text available Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Device*	Original	PDF	NTMFS4841NH NTMFS4841NH/D 4841Nh
4841NH Abstract: 4841N SO8FL mosfet 4841NH NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Device*	Original	PDF	NTMFS4841NH NTMFS4841NH/D 4841NH 4841N SO8FL mosfet 4841NH NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G
4841nh Abstract: NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Device*	Original	PDF	NTMFS4841NH AND8195/D NTMFS4841NH/D 4841nh NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH