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    MOSFET 4936N Search Results

    MOSFET 4936N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4936N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 4936n

    Abstract: mosfet+4936n
    Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft


    Original     		NTMFS4936N, NTMFS4936NC NTMFS4936N/D mosfet 4936n mosfet+4936n PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft


    Original     		NTMFS4936N, NTMFS4936NC NTMFS4936N/D PDF

    4936N

    Abstract: mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		NTMFS4936N NTMFS4936N/D 4936N mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G PDF

    4936N

    Abstract: mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		NTMFS4936N NTMFS4936N/D 4936N mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N PDF

    mosfet 4936n

    Abstract: No abstract text available
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance


    Original     		NTMFS4936N NTMFS4936N/D mosfet 4936n PDF

    mosfet 4936n

    Abstract: 4936N
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance


    Original     		NTMFS4936N NTMFS4936N/D mosfet 4936n 4936N PDF