MOSFET 50 63NG Search Results

MOSFET 50 63NG Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 50 63NG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet 63ng Abstract: 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4863N NTD4863N/D mosfet 63ng 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng
mosfet 63ng Abstract: 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	PDF	NTD4863N NTD4863N/D mosfet 63ng 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N
mosfet 63ng Abstract: 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4863N NTD4863N/D mosfet 63ng 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng
4963ng Abstract: mosfet 63ng 49 63ng NTD4963 63ng 4963N Text: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4963N NTD4963N/D 4963ng mosfet 63ng 49 63ng NTD4963 63ng 4963N
49 63ng Abstract: mosfet 63ng Text: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4963N NTD4963N/D 49 63ng mosfet 63ng
49 63ng Abstract: mosfet 63ng 63ng 4963ng NTD4963 NTD4963N NTD4963N-1G 5E-03 4963N NTD4963NT4G Text: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4963N NTD4963N/D 49 63ng mosfet 63ng 63ng 4963ng NTD4963 NTD4963N-1G 5E-03 4963N NTD4963NT4G
mosfet 63ng Abstract: 49 63ng Text: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4963N NTD4963N/D mosfet 63ng 49 63ng
4963ng Abstract: 49 63ng mosfet 63ng 63ng NTD4963N NTD4963NT4G NTD4963 4963N 369D BFR 965 Text: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4963N NTD4963N/D 4963ng 49 63ng mosfet 63ng 63ng NTD4963N NTD4963NT4G NTD4963 4963N 369D BFR 965
mosfet 63ng Abstract: MOSFET 48 63ng 49 63ng NTD4863N Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices	Original	PDF	NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N