sud*45N05-20L
Abstract: SUD45N05-20L
Text: SUD45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V 30 VDS (V) 50 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
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SUD45N05-20L
O-252
SUD45N05-20L
08-Apr-05
sud*45N05-20L
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Untitled
Abstract: No abstract text available
Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V
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SiS496EDNT
SiS496EDNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiR464DP
Abstract: No abstract text available
Text: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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SiR464DP
SiR464DP-T1-GE3
11-Mar-11
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SIR464
Abstract: No abstract text available
Text: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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SiR464DP
SiR464DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR464
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70271
Abstract: SUD45N05-20L
Text: SUD45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V "30 0.020 @ VGS = 4.5 V "30 VDS (V) 50 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45N05-20L S N-Channel MOSFET
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SUD45N05-20L
O-252
S-57247--Rev.
23-Mar-98
70271
SUD45N05-20L
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Untitled
Abstract: No abstract text available
Text: SQD50N03-4m3 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0032 ID (A) • 100 % Rg and UIS Tested 50 Configuration
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SQD50N03-4m3
AEC-Q101
O-252
SQD50N03-4m3-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUD50N03-11
O-252
SUD50N03-11-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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sira
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
2002/95/EC
SiRA02DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sira
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Untitled
Abstract: No abstract text available
Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET
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Si7748DP
Si7748DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiE800DF
Abstract: No abstract text available
Text: SiE800DF New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES ID (A)a rDS(on) (W) Silicon Limit Package Limit 0.0072 @ VGS = 10 V 90 50 0.0115 @ VGS = 4.5 V 73 50 VDS (V) 30 Qg (Typ) 12 nC Package Drawing PolarPAK 10 D 9 G 8 S
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SiE800DF
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00085 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1
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STL220N3LLH7
AM15540v2
DocID024732
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SUD50N03-11
Abstract: No abstract text available
Text: SUD50N03-11 New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a 0.011 @ VGS = 10 V 50 0.017 @ VGS = 4.5 V 43 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-11 S N-Channel MOSFET
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SUD50N03-11
O-252
S-01329--Rev.
12-Jun-00
SUD50N03-11
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Untitled
Abstract: No abstract text available
Text: PD - 97735A IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters
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7735A
IRFH8311PbF
IRFH8311TRPBF
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00081 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1 • Very low Qg
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STL220N3LLH7
AM15540v2
DocID024732
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Untitled
Abstract: No abstract text available
Text: IRFH8318PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 3.1 (@VGS = 10V) (@VGS = 4.5V) 4.6 Qg typ 19 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits
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IRFH8318PbF
IRFH8318TRPBF
IRFH8318TR2PBF
Compatibil90Â
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Untitled
Abstract: No abstract text available
Text: IRFH8324PbF VDS Vgs max RDS on max 30 V ± 20 V 4.1 (@VGS = 10V) (@VGS = 4.5V) 6.3 Qg typ. 14 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits
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IRFH8324PbF
IRFH8324TRPBF
IRFH8324TR2PBF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK1536DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Features • VDSS : 150 V RDS on : 30 m (Max) ID : 50 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
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RJK1536DPE
REJ03G1612-0300
PRSS0004AE-B
impedanc9044
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50P03HG
Abstract: 50p03h
Text: MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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MTB50P03HDL,
MVB50P03HDLT4G
MTB50P03HDL/D
50P03HG
50p03h
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Untitled
Abstract: No abstract text available
Text: TDA7850 4 x 50 W MOSFET quad bridge power amplifier Features • High output power capability: – 4 x 50 W/4 max. – 4 x 30 W/4 @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2 max. – 4 x 55 W/2 @ 14.4V, 1 kHz, 10 % ■ MOSFET output power stage ■
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TDA7850
Flexiwatt25
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Transistor Mosfet N-Ch 30V
Abstract: P Channel STripFET STS3C3F30L P-channel N-Channel power mosfet SO-8
Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ
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STS3C3F30L
STS3C3F30L
Transistor Mosfet N-Ch 30V
P Channel STripFET
P-channel N-Channel power mosfet SO-8
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STS3C3F30L
Abstract: No abstract text available
Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ
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STS3C3F30L
STS3C3F30L
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IEC61249-2-21
Abstract: JESD22 080N03L
Text: IPP080N03L G Type IPB080N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 8.0 mΩ ID 50 A • Qualified according to JEDEC1) for target applications
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IPP080N03L
IPB080N03L
IEC61249-2-21
PG-TO220-3-1
PG-TO263-3
080N03L
IEC61249-2-21
JESD22
080N03L
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TDA7850A
Abstract: No abstract text available
Text: TDA7850A 4 x 50 W MOSFET quad bridge power amplifier Datasheet − production data Features • High output power capability: – 4 x 50 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4 V, 1 kHz, 10 % ■
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TDA7850A
TDA7850A
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Untitled
Abstract: No abstract text available
Text: □ IXYS ADVANCE INFORMATION HiPerFET Power MOSFET 43N60 IXFN 40N60 ix f n Single MOSFET Die IXFK 43N60 IXFK 40N60 V DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D Kr DS on 0.1 3Ü. 0.1 50. 0.1 30 0.1 50 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol
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43N60
40N60
200ns
O-264
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