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    MOSFET 500V 10A Search Results

    MOSFET 500V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 500V 10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FSS430

    Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70


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    JANSR2N7402 FSS430R4 R2N74 FSS430 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112 PDF

    B20NM50FD

    Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
    Text: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC


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    STP20NM50FD STF20NM50D STB20NM50FD O-220/TO-220FP/D2PAK STF20NM50D B20NM50FD P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD ZVS phase-shift converters PDF

    20nm50

    Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP V435
    Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A


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    STP20NM50 STP20NM50FP STB20NM50 STB20NM50-1 O-220/FP/D2PAK/I2PAK STP20NM50/FP STB20NM50 20nm50 STB20NM50-1 STP20NM50FP V435 PDF

    20NM50

    Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
    Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A


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    STP20NM50 STP20NM50FP STB20NM50 STB20NM50-1 O-220/FP/D2PAK/I2PAK STP20NM50/FP STB20NM50 20NM50 STB20NM50-1 STP20NM50FP PDF

    Untitled

    Abstract: No abstract text available
    Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A


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    O-220/FP/D2PAK/I2PAK STP20NM50/FP STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP O-220 O-220FP PDF

    STP20NM50FP

    Abstract: 20nm50 STB20NM50 STB20NM50-1 STP20NM50
    Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A 20 A


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    STP20NM50 STP20NM50FP STB20NM50 STB20NM50-1 O-220/FP/D2PAK/I2PAK STP20NM50/FP STB20NM50 STP20NM50FP 20nm50 STB20NM50-1 PDF

    DM t 96 10a 250v

    Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
    Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


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    4167A O-257AA) IRFY11N50CMA O-257AA DM t 96 10a 250v IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


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    4167A O-257AA) IRFY11N50CMA O-257AA PDF

    Untitled

    Abstract: No abstract text available
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FQP10N50CF FQPF10N50CF FQPF10N50CF PDF

    FQPF10N50CF

    Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FQP10N50CF FQPF10N50CF FQPF10N50CF FQPF Series mosfet 500v 10A mosfet 10a 500v PDF

    Untitled

    Abstract: No abstract text available
    Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP


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    STB11NK40Z STP11NK40ZFP STP11NK40Z O220-TO220FP-D2PAK STB11NK50Z STP11NK50Z STP11NK50ZFP O-220 O-220FP PDF

    P11NK40Z

    Abstract: P11NK40 P11NK40ZFP STP11NK40Z
    Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP


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    STB11NK40Z STP11NK40ZFP STP11NK40Z O220-TO220FP-D2PAK STB11NK50Z STP11NK50Z STP11NK50ZFP O-220 O-220FP P11NK40Z P11NK40 P11NK40ZFP STP11NK40Z PDF

    P channel MOSFET 1A

    Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
    Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


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    FRM450D, FRM450R, FRM450H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD P channel MOSFET 1A 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


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    FRM450D, FRM450R, FRM450H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    20nm50

    Abstract: N-Channel mosfet 400v to220 STB20NM50-1 STP20NM50 STP20NM50FP
    Text: STP20NM50 - STP20NM50FP STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/TO-220FP/I²PAK MDmesh Power MOSFET TARGET DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM50/FP 500V <0.230Ω 20 A STB20NM50-1 500V <0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω


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    STP20NM50 STP20NM50FP STB20NM50-1 O-220/TO-220FP/I STP20NM50/FP 20nm50 N-Channel mosfet 400v to220 STB20NM50-1 STP20NM50FP PDF

    2E12

    Abstract: 3E12 FSL430R4 JANSR2N7398
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


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    JANSR2N7398 FSL430R4 2E12 3E12 FSL430R4 JANSR2N7398 PDF

    2E12

    Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


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    JANSR2N7402 FSS430R4 2E12 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430 PDF

    20nm50

    Abstract: No abstract text available
    Text: STP20NM50 - STP20NM50FP STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET TARGET DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM50/FP 500V <0.230Ω 20 A STB20NM50-1 500V <0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω


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    O-220/TO-220FP/I STP20NM50/FP STB20NM50-1 STP20NM50 STP20NM50FP O-220 O-220FP 20nm50 PDF

    BUZ45B

    Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
    Text: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as


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    BUZ45B BUZ45 TA17435. BUZ45B TA17435 BUZ-45B transistor BUZ45 500V N-Channel MOSFET ID 29A PDF

    250V 10A TF 106

    Abstract: No abstract text available
    Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan
    FRM450D, FRM450R, FRM450H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AA 250V 10A TF 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    O-257AA) IRFY11N50CMA O-257AA PDF

    Untitled

    Abstract: No abstract text available
    Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


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    O-220/I STP20NM50FD STB20NM50FD-1 O-220 O-220) PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


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    JANSR2N7398 FSL430R4 PDF

    mosfet 20A 500V

    Abstract: FDP20N50 "Power Diode" 500V 20A FDPF20N50
    Text: TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FDP20N50 FDPF20N50 FDPF20N50 mosfet 20A 500V "Power Diode" 500V 20A PDF