FSS430
Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70
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JANSR2N7402
FSS430R4
R2N74
FSS430
2E12
3E12
FSS430R4
JANSR2N7402
Rad Hard in Fairchild for MOSFET
J-112
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Untitled
Abstract: No abstract text available
Text: RT8468A 500V Power MOSFET Integrated High Efficiency Constant Current LED Driver General Description Features The RT8468A integrates a 500V power MOSFET and a PWM controller. It is used for step-down converters by well controlling the internal MOSFET and regulating a
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RT8468A
00V/1A
RT8468A
DS8468A-00
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2E12
Abstract: 3E12 FSL430R4 JANSR2N7398
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7398
FSL430R4
2E12
3E12
FSL430R4
JANSR2N7398
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Untitled
Abstract: No abstract text available
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
FSL430R4
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JANSR2N7398
Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7398
FSL430R4
JANSR2N7398
2E12
3E12
FSL430R4
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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2E12
Abstract: 3E12 FRL430D FRL430H FRL430R
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRL430D
FRL430H
FRL430R
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2E12
Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRL430D
FRL430H
FRL430R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7402
FSS430R4
2E12
3E12
FSS430R4
JANSR2N7402
relay 12v 300 ohm
FSS430
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7402
FSS430R4
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 2N50K-TA Power MOSFET 2A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a
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2N50K-TA
2N50K-TA
QW-R205-031
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2N50
Abstract: 547B
Text: UNISONIC TECHNOLOGIES CO., LTD 2N50 Preliminary Power MOSFET 2A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220F
O-252
QW-R502-547
2N50
547B
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Untitled
Abstract: No abstract text available
Text: RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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RDD022N50
SC-63)
OT-428)
022N50
R1102A
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Untitled
Abstract: No abstract text available
Text: RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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RDD023N50
SC-63)
OT-428)
023N50
R1102A
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Untitled
Abstract: No abstract text available
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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2E12
Abstract: 3E12 FRS430D FRS430H FRS430R 794V
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
2E12
3E12
FRS430D
FRS430H
FRS430R
794V
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2E12
Abstract: 3E12 FRM430D FRM430H FRM430R
Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM430D,
FRM430R,
FRM430H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRM430D
FRM430H
FRM430R
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13N50
Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
13N50
QW-R502-362
utc13n50
13n50g
13N50 equivalent
mosfet driver 400v
halogen ballast
13N50G-TA3-T
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STB4NC50
Abstract: No abstract text available
Text: STB4NC50 N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB4NC50 500V < 2.7Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STB4NC50
STB4NC50
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43721
Abstract: No abstract text available
Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL430R4
JANSR2N7398
MIL-STD-750,
MIL-S-19500,
500ms;
43721
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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VIVA
Abstract: No abstract text available
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
-257AA
VIVA
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PDF
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Untitled
Abstract: No abstract text available
Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRM430D,
FRM430R,
FRM430H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
desi45
O-204AA
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PDF
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44i2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2
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OCR Scan
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FS3UM-10
FS3UM-10
5711K2
44i2
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