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    MOSFET 50V 30A Search Results

    MOSFET 50V 30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 50V 30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		PDF RFG60P05E TA09835. O-247 175oC RFG60P05E TB334

    TA9771

    Abstract: BUZ11 TB334
    Text: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as


    Original     		PDF BUZ11 BUZ11 TA9771. TA9771 TB334

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N05 Power MOSFET 30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT30N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current


    Original     		PDF UTT30N05 UTT30N05 UTT30N05L-TN3-R UTT30N05G-TN3-R QW-R502-660

    40V 60A MOSFET

    Abstract: RFG60P05E TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 40V 60A MOSFET RFG60P05E TB334

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 RFG60P05E TB334

    60n05

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary Power MOSFET 60A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.


    Original     		PDF 60N05 60N05 130nC) 60N05L-TA3-T 60N05G-TA3-T QW-R502-716

    50V 60A MOSFET

    Abstract: RFG60P05E 124E-12
    Text: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model


    Original     		PDF RFG60P05E O-247 175oC RFG60P05E 15e-10 1e-30 42e-4 85e-3 69e-6) 50V 60A MOSFET 124E-12

    BUZ11_NR4941

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet September 2013 N-Channel Power MOSFET 50V, 30A, 40 mΩ Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF BUZ11 TA9771. BUZ11 BUZ11_NR4941

    BUZ11

    Abstract: TB334
    Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


    Original     		PDF BUZ11 TA9771. BUZ11 TB334

    4 pin hall effect dC motor

    Abstract: Hall Effect Current Measurements
    Text: MIL-PRF-38534 CERTIFIED FACILITY 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER M.S.KENNEDY CORP. 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating


    Original     		PDF MIL-PRF-38534 MSK4365 4 pin hall effect dC motor Hall Effect Current Measurements

    41A hall

    Abstract: PID controller for temperature control with pwm
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating


    Original     		PDF MIL-PRF-38534 MSK4365 41A hall PID controller for temperature control with pwm

    41a hall sensor

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating


    Original     		PDF MIL-PRF-38534 MSK4365 41a hall sensor

    BUZ11

    Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
    Text: BUZ11  N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET T YPE BUZ11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 30 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11 -TO-220 175oC O-220 BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic datecode G1

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    41a hall sensor

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating


    Original     		PDF MIL-PRF-38534 MSK4365 41a hall sensor

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes


    OCR Scan     		PDF RFG60P05E TA09835. 0-030i2

    4134 mosfet

    Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
    Text: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.


    OCR Scan     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRFZ44N HUF75307P3, HUF75307D3, HUF75307D3S HUF75309P3, HUF75309D3, 4134 mosfet Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET

    TA9771

    Abstract: buz11
    Text: intelai I BUZ11 Data S heet Ju n e 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET F ile N u m b e r 2253.2 Features • 30A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF BUZ11 TA9771. BUZ11 TA9771

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated


    OCR Scan     		PDF RFG60P05E O-247 11e-1 34e-3TRS2 46e-12) 15e-10 1e-30 42e-4 85e-3

    RFG60P05E

    Abstract: No abstract text available
    Text: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF RFG60P05E TA09835. 0-030Q RFG60P05E AN7254 AN7260.

    TA9771

    Abstract: No abstract text available
    Text: BUZ11 Semiconductor Data Sheet June 1999 30A, 50 V, 0.040 Ohm, N-Channel Power MOSFET File Number 2253.2 Features • 30A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF BUZ11 TA9771. BUZ11 TA9771

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE


    OCR Scan     		PDF BUZ11 -TO-220