MOSFET 5N120BND Search Results

MOSFET 5N120BND Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 5N120BND Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
5n120bnd Abstract: mosfet 5N120bnd TA49306 5n120 HGT1S5N120BNDS HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308 Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	Original	HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGTG5N120BN, HGT1S5N120BNDS TA49308. TA49058 RHRD6120) 5n120bnd mosfet 5N120bnd TA49306 5n120 HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308	PDF
HGTG5N120BND Abstract: 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 HGTP5N120BND RHRD6120 TA49308 TB334 Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT	Original	HGTG5N120BND, HGTP5N120BND HGTG5N120BND HGTP5N120BND TA49308. TA49058 RHRD6120) 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 RHRD6120 TA49308 TB334	PDF
mosfet 5N120bnd Abstract: No abstract text available Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT	Original	HGTG5N120BND, HGTP5N120BND HGTG5N120BND HGTP5N120BND TA49308. TA49058 RHRD6120) mosfet 5N120bnd	PDF
5n120bnd Abstract: HGT1S5N120BNDS mosfet 5N120bnd IC-2521 5n120 HGTG5N120BND 12V 200A Relay HGTP5N120BND RHRD6120 TA49058 Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	Original	HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGT1S5N120BNDS TA49308. TA49058 RHRD6120) 5n120bnd mosfet 5N120bnd IC-2521 5n120 HGTG5N120BND 12V 200A Relay HGTP5N120BND RHRD6120 TA49058	PDF
5N120BND Abstract: mosfet 5N120bnd 5n120 HGTG5N120BND 12V 200A Relay HGT1S5N120BNDS HGTP5N120BND RHRD6120 TA49058 TA49308 Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	Original	HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGTG5N120BN, HGT1S5N120BNDS TA49308. TA49058 RHRD6120) 5N120BND mosfet 5N120bnd 5n120 HGTG5N120BND 12V 200A Relay HGTP5N120BND RHRD6120 TA49058 TA49308	PDF
HGTP5N120BND Abstract: No abstract text available Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet November 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	Original	HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGT1S5N120BNDS TA49308. TA49058 RHRD6120) HGTP5N120BND	PDF
Untitled Abstract: No abstract text available Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J an u ary 1999 D ata S h eet 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGTG5N120BN, HGT1S5N120BNDS TA49308. TA49058 RHRD6120) 1-800-4-HARRIS	PDF
5n120bnd Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGTG5N120BN, HGT1S5N120BNDS TA49308. TA49058 RHRD6120) 1-800-4-HARRIS 5n120bnd transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND	PDF