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    MOSFET 600V 100A Search Results

    MOSFET 600V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V 100A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    w20nm

    Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω


    Original     		STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm w20nm60 p20nm60fp P20NM60FP equivalent PDF

    W20NM60

    Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STB20NM60 STB20NM60-1 W20NM60 P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 PDF

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 STB20NM60-1 w20nm60 w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60 PDF

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm60 w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 P20NM60FP equivalent PDF

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A PDF

    b9nk60zd

    Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
    Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W


    Original     		STB9NK60ZD STF9NK60ZD STP9NK60ZD D2PAK/TO-220FP/TO-220 STF9NK60ZD O-220FP O-220 b9nk60zd p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1 PDF

    Mosfet

    Abstract: SSF2N60D1
    Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2N60D1 O-252 O-252ï Mosfet SSF2N60D1 PDF

    Mosfet

    Abstract: SSF10N60F
    Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF10N60F O220F dev60F Mosfet SSF10N60F PDF

    Mosfet

    Abstract: SSF10N60
    Text: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF10N60 O-220 inN60 Mosfet SSF10N60 PDF

    Mosfet

    Abstract: SSF2N60G
    Text: SSF2N60G 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.5Ω (typ.) ID 2A TO-251 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2N60G O-251 O-251ï Mosfet SSF2N60G PDF

    1NK60Z

    Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
    Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		STD1LNK60Z-1 STQ1NK60ZR STN1NK60Z OT-223 STQ1NK60ZR 1NK60Z STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode PDF

    Mosfet

    Abstract: SSF2N60D2
    Text: SSF2N60D2 600V N-Channel MOSFET Preliminary Main Product Characteristics VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2N60D2 O-252 O-252ï Mosfet SSF2N60D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.  VDS = 600V  ID = 0.4A  RDS ON ≤ 8.5Ω


    Original     		MDZ1N60 PDF

    IRFPC40

    Abstract: No abstract text available
    Text: IRFPC40 Data Sheet January 2002 6.8A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features • 6.8A, 600V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFPC40 IRFPC40 PDF

    STB4NC60A-1

    Abstract: STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) STB4NC60A-1 STP4NC60AFP PDF

    4NC60

    Abstract: STB4NC60A-1 STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 4NC60 STB4NC60A-1 STP4NC60AFP PDF

    4nC60

    Abstract: STP4NC60FP STB4NC60-1 STP4NC60
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 4nC60 STP4NC60FP STB4NC60-1 PDF

    JESD97

    Abstract: STD1LNK60Z-1 STN1NK60Z STQ1NK60ZR-AP
    Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z O-251 OT-223 STQ1NK60ZR-AP JESD97 STD1LNK60Z-1 STN1NK60Z PDF

    Untitled

    Abstract: No abstract text available
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP PDF

    1Nk60

    Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
    Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z O-251 OT-223 STQ1NK60ZR-AP 1Nk60 1NK60Z 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z PDF

    4NC60

    Abstract: STP4NC60A STB4NC60A-1 STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) 4NC60 STB4NC60A-1 STP4NC60AFP PDF

    4nc60

    Abstract: STP4NC60FP B4NC60 STB4NC60-1 STP4NC60
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4nc60 STP4NC60FP B4NC60 STB4NC60-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A


    Original     		STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP O-220/TO-220FP/D2PAK/I2PAK STB11NM60FD O-220 STP11NM60FD PDF

    smps 5v 0.3A

    Abstract: N-Channel 600V MOSFET AF01N60C low vgs mosfet to-92
    Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical


    Original     		AF01N60C AF01N60C -55oC 150oC smps 5v 0.3A N-Channel 600V MOSFET low vgs mosfet to-92 PDF