Y60NM60
Abstract: STY60NM60 MAX247
Text: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STY60NM60
Max247
Y60NM60
STY60NM60
MAX247
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Untitled
Abstract: No abstract text available
Text: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STY60NM60
Max247
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mosfet 4430
Abstract: 4430 MOSFET 600v 60a STY60NM60
Text: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STY60NM60
Max247
mosfet 4430
4430
MOSFET 600v 60a
STY60NM60
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IRFAC30
Abstract: mosfet 600V 3.6A N-CHANNEL TO
Text: PD -90513 IRFAC30 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC30 BVDSS 600V RDS(on) 2.2Ω ID 3.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAC30
O-204AA/AE)
pa252-7105
IRFAC30
mosfet 600V 3.6A N-CHANNEL TO
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 1 4 Q2
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APTC60AM83B1G
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 CR1 1 4
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APTC60AM83B1G
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PDF
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300V dc dc boost converter
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4
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APTC60AM83B1G
case150
300V dc dc boost converter
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Untitled
Abstract: No abstract text available
Text: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M60B2
APT56M60L
O-264
O-247
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Infineon CoolMOS
Abstract: No abstract text available
Text: 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg
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APT60N60BCS
APT60N60SCS
APT60N60BCSG*
APT60N60SCSG*
O-247
Infineon CoolMOS
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APT56M60B2
Abstract: APT56M60L MIC4452
Text: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M60B2
APT56M60L
O-264
O-247
APT56M60B2
APT56M60L
MIC4452
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PDF
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Untitled
Abstract: No abstract text available
Text: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M60B2
APT56M60L
O-264
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: SSF17N 60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA M ax @ VDS= 600V
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SSF17N
SSF17N60A
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Untitled
Abstract: No abstract text available
Text: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 flow NPC 0 600V/60A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 65A parallel switch 60A IGBT and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout
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10-PZ06NRA069FP03-P967F78Y
10-FZ06NRA069FP03-P967F78
00V/60A
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Untitled
Abstract: No abstract text available
Text: 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg
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APT60N60BCS
APT60N60SCS
APT60N60BCSG*
APT60N60SCSG*
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 NPC Application flowNPC 0 600V/60A & 99mΩ PS* General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 8Ω 8Ω Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V
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10-PZ06NRA069FP03-P967F78Y
10-FZ06NRA069FP03-P967F78
00V/60A
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APT94N60L2C3
Abstract: No abstract text available
Text: APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
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APT94N60L2C3
O-264
O-264
APT94N60L2C3
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Untitled
Abstract: No abstract text available
Text: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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APTC60HM45SCTG
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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APTC60HM70SCTG
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50b60pd
Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
50b60pd
50B60PD1
50B60PD1E
AUIRGP50B60
AUIRGP50B60PD1
p50b60pd1
50b60
AUIRGP50B60PD1E
200V AUTOMOTIVE MOSFET
irfp250 DRIVER
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APT0406
Abstract: APT0501 APT0502
Text: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM45SCTG
APT0406
APT0501
APT0502
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APT0406
Abstract: APT0502
Text: APTC60DHM45T1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Asymmetrical bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • •
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APTC60DHM45T1G
APT0406
APT0502
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM45SCTG
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APTC60HM70SCTG
Abstract: APT0406
Text: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM70SCTG
APTC60HM70SCTG
APT0406
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM70SCTG
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