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    MOSFET 60V 75A Search Results

    MOSFET 60V 75A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 60V 75A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDB024N06

    Abstract: No abstract text available
    Text: FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4mΩ Features General Description • RDS on = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDB024N06 FDB024N06 PDF

    FDP025N06

    Abstract: No abstract text available
    Text: FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP025N06 O-220 FDP025N06 PDF

    diode marking 226

    Abstract: No abstract text available
    Text: FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4mΩ Features General Description • RDS on = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDB024N06 FDB024N06 diode marking 226 PDF

    diode marking 226

    Abstract: FDI025N06
    Text: FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDI025N06 O-262 FDI025N06 diode marking 226 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP025N06 FDP025N06 O-220 PDF

    FDB5645

    Abstract: FDP5645 mosfet 4468
    Text: FDP5645/FDB5645 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDP5645/FDB5645 FDB5645 FDP5645 mosfet 4468 PDF

    ic 4468

    Abstract: m 9835 marking 4468 mosfet 4468 CBVK741B019 EO70 F63TNR FDB5645 FDP5645 FDP7060
    Text: FDP5645/FDB5645 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDP5645/FDB5645 ic 4468 m 9835 marking 4468 mosfet 4468 CBVK741B019 EO70 F63TNR FDB5645 FDP5645 FDP7060 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP040N06 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDI040N06 PDF

    FDI030N06

    Abstract: a2801
    Text: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI030N06 FDI030N06 a2801 PDF

    FDP030N06

    Abstract: No abstract text available
    Text: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP030N06 O-220 FDP030N06 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI030N06 PDF

    FDB029N06

    Abstract: 60V dual N-Channel trench mosfet
    Text: FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB029N06 FDB029N06 60V dual N-Channel trench mosfet PDF

    FDB039N06

    Abstract: No abstract text available
    Text: FDB039N06 N-Channel PowerTrench MOSFET 60V, 174A, 3.9mΩ Features General Description • RDS on = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB039N06 FDB039N06 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP030N06 FDP030N06 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.


    Original     		FDP5645/FDB5645 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP025N06 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDI025N06 O-262 FDI025N06 PDF

    1S721

    Abstract: FDP040N06
    Text: FDP040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP040N06 FDP040N06 O-220 1S721 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI040N06 FDI040N06 PDF

    FDI040N06

    Abstract: 1672A
    Text: FDI040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI040N06 FDI040N06 1672A PDF

    LT 8235

    Abstract: FDB039N06
    Text: FDB039N06 N-Channel PowerTrench MOSFET 60V, 174A, 3.9mΩ Features General Description • RDS on = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB039N06 LT 8235 FDB039N06 PDF

    FDP040N06

    Abstract: specifications of MOSFET
    Text: FDP040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP040N06 O-220 FDP040N06 specifications of MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI030N06 FDI030N06 PDF